• Smart Media Journal
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• v.9 no.4
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• pp.60-65
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• 2020

The monopulse tracking algorithm can estimate the location of a partner station based on an RF (Radio Frequency) signal. The location of the partner station is estimated based on the monopulse ratio curve (MR-C), which is calculated based on the sum and difference signal patterns of an antenna. Therefore, the range in which the estimated location can be calculated with high accuracy increases in proportion to the linear region of MR-C. In this paper, we proposed a method to extend the linear region of the MR-C curve using the beamforming technique for the tracking antenna system using the active phased array antenna. Simulation results based on the same antenna system, it was confirmed that the linear region of MR-C was enlarged by about twice as much as the general case where the proposed method was not applied.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.91-95
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• 2022

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20 nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×10²¹ cm^-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10^-3 Ω^-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.138-143
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• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• Korean Journal of Materials Research
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• v.33 no.11
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• pp.497-501
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• 2023

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film's optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 ℃. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

• The Journal of the Korean bone and joint tumor society
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• v.10 no.2
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• pp.88-95
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• 2004

Purpose: Current treatment for osteoid osteomas is usually surgical excision of the nidus. Various minimal invasive techniques have been reported to overcome the invasiveness of the surgical excision. We treated 22 patients with osteoid osteoma by percutaneous thermoablation of the nidus under computed-tomography guidance. Materials and Methods: Twenty two consecutive patients underwent CT-guided percutaneous radio-frequency thermoablation between April 1999 and May 2004. The mean age was 26.5(7~55) years. In three cases, the diagnosis was confirmed pathologically before the prodedure while the others clinically and radiologically. Computed tomography (CT)-guided percutaneous RF ablation was performed with general or spinal anesthesia. With an RF electrode, the lesion was heated to 80 or 90 degrees C for 6(3~8) minutes. Clinical success was assessed at a mean of 30(4~62) months after the procedure at out patient clinic or by telephone interview. Results: The procedure was technically successful in all cases except a complication. Patients were discharged on 1.9 days after the procedure and resumed normal activities immediately. All patients but three (86%) remained pain free during follow-up (range 4~62 months). A second thermoablation treatment relieved the recurrent symptoms in 2 patients and the remained had persistent pain without a second prodedure. Conclusion: Percutaneous thermoablation appears to be safe and effective for osteoid osteomas, and is a minimally invasive procedure alternative to surgical resection.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.3
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• pp.62-73
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• 2008

In this paper, domestic standard revision plan of dynamic frequency method which is used both in unmanned automatic toll collection system and manned collection system of the express highway is presented. For such ETCS, the infrared rays (870 nm) of active frequency method and the frequency integrated method (5.8 GHz) are adopted and extended to be operated to the all around the Toll Gate. This standardization plan is based on inter connection reference model between OSI (Open System Interconnection) in process of ITS short range radio communication standardization of 5.8 GHz bandwidth to support traffic information and control system service, and the derived revision plan by starting from physical layer which support interoperability for multiple access between RSE (Road Side Equipment) and OBE (On Board Equipment), in which is categorized into physical layer, data link layer, and application layer. In case of radiation power, existing standard is divided by class1 (within 10 m) and Class2 (within 100 m) according to transmission lengthwhile it is operated with just single standard 'Class1' because of notification of Ministry of Information and Communication in 2004. In the case of the limitation value of incident power in communication area, considering operation plan of ETCS that is on actuality operation the measurements are reflected to the standard. In other wort this paper proposed the improvement standard of incident power, pseudo response in the communication area and radiated power in order to secure stability and compatibility among operator systems about the needed part on ETCS operation.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.2
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• pp.9-17
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• 2010

Recently, there has been much interest in orthogonal frequency division multiplexing (OFDM) for next generation wireless wideband communication systems. OFDM is a special case of multicarrier transmission, where a single data stream is transmitted over a number of lower-rate subcarriers. One of the main reasons to use OFDM is to increase robustness against frequency-selective fading or narrowband interference. However, in the radio systems it is also important to distortion introduced by high power amplifiers (HPA's) such as solid state power amplifier (SSPA) considered in this paper. Since the signal amplitude of the OFDM system is Rayleigh-distributed, the performance of the OFDM system is significantly degraded by the nonlinearity of the HPA in the OFDM transmitter. In this paper, we propose a canonical piecewise-linear (PWL) model based digital predistorter to prevent signal distortion and spectral re-growth due to the high peak-to-average power ratio (PAPR) of OFDM signal and the nonlinearity of HPA's. Computer simulation on an OFDM system under additive white Gaussian noise (AWGN) channels with QPSK, 16-QAM and 64-QAM modulation schemes and modulator/demodulator implemented with 1024-point FFT/IFFT, demonstrate that the proposed predistorter achieves significant performance improvement by effectively compensating for the nonlinearity introduced by the SSPA.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.43-49
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• 2010

Direct printing technology is an attractive metallization method, which has become immerging as "Green technology" to the conventional photolithography, on account of low cost, simple process and environment-friendliness. In order to commercialize the printed electronics in industry, it is essential to evaluate the electrical properties of conductive circuits using direct printing technology. In this contribution, we focused on the electrical characteristics of inkjet-printed circuits. A Cu nanoink was inkjet-printed onto a Bisaleimide triazine(BT) substrate with parallel transmission line(PTL) and coplanar waveguide(CPW) type, then was sintered at $250^{\circ}C$ for 30 min. We calculated the resistivity of printed circuits through direct current resistance by the measurement of I-V curve: the resistivity was approximately 0.558 ${\mu}{\Omega}{\cdot}cm$ which is about 3.3 times that of bulk Cu. Cascade's probe system in the frequency range from 0 to 30 GHz were employed to measure the Scattering parameter(S-parameter) with or without a gap between the substrate and the probe station chuck. The result of measured S-parameter showed that all printed circuits had over 5 dB of return loss in the entire frequency range. In the curve of insertion loss, $S_{21}$, showed that the PTL type circuits had better transmission of radio frequency (RF) than CPW type.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.580-584
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• 2001

We have investigated the deposition characteristics of Ti-Si-N films obtained by rf magnetron sputtering with ratios of Ti/Si targets in an $Ar/N_2$ gas mixture. The growth rate and stoichiometry dependence of the Ti-Si-N films on the ratio of Ti/Si and $N_2$ flow rate ratio were found to be due to the different nitriding rate of Ti and Si targets. Additionally, their different sputtering yield of nitrified Ti and Si make a reason as well. Lowering Si content in the film favored the formation of crystalline TiN, leading to the low resistivity. Increasing N content led to the Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the film is one of the most important factors determining the diffusion barrier characteristics. In the current work, the optimum process conditions for the formation of efficient diffusion barrier of Ti-Si-N film has successfully obtained by manipulating the Ti/Si ratio of target and $N_2$ flow rate ratio.