• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.3
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1576-1578
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• 1996

MgO protection layer in ac PDP prevents the dielectric layer from sputtering of ion in discharge plasma in addition to the contribution to the memory function and also have the additional important roll in lowering the firing Voltage due to a large secondary electron emission yield(${\gamma}$). The methode of Sputtering are easy to apply on mass production and to enlarge the size of the panel and are known to have the superior Adhesion and Uniformity of thin film. MgO protection layer of $1000{\AA}$ on dielectric layer by Reactive R.F magnetron sputtering is formed. Discharge characteristics have done with the formation of protection layer.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.51-61
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• 1999

$SrBi_2Ta_2O_9$ thin films were prepared on $Pt/SiO_2$/Si p-tyPp (100) substrate by r.f. magnetron sputtering method. The films were annealed at $800^{\circ}C$ and characterized in terms of micro-structures and electrical properties depending on film deposition conditions. XRD patterns of SBT films annealed at $800^{\circ}C$ indicated the typical SBT phase of (006), (111), and (200) with BiPt additional peaks. SEM images show that crystal gram become to grow with increasing the substrate temperature and decreasing the gas pressure. The remanant polarization(2Pr) and the coercive field(Ec) of 200nm thickness SBT film which was deposited at 10$0^{\circ}C$ under 50mtorr gas pressure and annealed at $800^{\circ}C$ were 20.07$\mu$C/$\textrm {cm}^2$ and 79kV/cm, respectively.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.307-311
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• 1999

The well-crystalline hydroxyapatite($Ca_{10}(PO_4)_6(OH)_2$ ; HAp) layer having a biocompatibility was successfully coated onto titanium substrate using a radio-frequency magnetron sputtering, and effects of sputtering gas and the thickness of HAp film on a crystal growth of the HAp layers were investigated. The deposition rate of the layer sputtered with water-vapour gas was slower than that of the layer sputtered with argon gas. The results of X-ray diffraction demonstrated that the about $0.8\mu\textrm{m}$ thick HAp film under water-vapour gas was an amorphous phase, the about $1.2\mu\textrm{m}$ thick film was (100) plane-oriented HAp, and the about $1.5\mu\textrm{m}$ thick film was (001)plane-oriented HAp. FT-IR analysis proved that hydroxyl group of the layer sputtered with argon gas was defected, but that of the layer sputtered with water-vapour gas was not defected. From these results, it was favorable to use water-vapour gas on the HAp coatings onto metal surface.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.669-676
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• 1995

In this study, EO glass films were deposited by R.F. magnetron sputtering using EO glass target. The glass formation of the EO film was greatly dependent on the substrate temperature and the crystallization started at approximately 28$0^{\circ}C$. As the temperature of the substrate or the oxygen content in the sputtering gas increased, UV/VIS/NIR absorption edge moved toward longer wavelength. A wave guiding phenomenon was observed from the prism-coupler experiment and a fluorescence of 1.06${\mu}{\textrm}{m}$ originated from 4Fe3/2longrightarrow4I11/2 transition of Nd3+ was detected from the film containing Nd3+ ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.145-146
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• 2005

Cadmium sulphide (CdS) films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the effect of the sputter pressure on the structural and optical properties of these films was evaluated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.125-126
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• 2006

ZnO Films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the effect of the sputter power on the structural and optical properties of these films was evaluated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.448-451
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• 2004

Vanadium oxides have been widely used in a variety of technological applications such electrochromic devices as infrared detectors and are expected as a material suitable for gas sensing applications. Thin films of Vanadium oxide (VOx) have been deposited by r.f magnetron sputtering under different oxygen partial pressure ratios and substrate temperatures. Humidity-sensitive properties of resistive sensors having interdigitated electrode structure are characterized. Our sensors show good response to humidity over 20%RH to 80%RH. Vanadium oxide films deposited with 0% $O_2$ partial pressure at foot exhibit greater sensitivity to humidity change than others.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2005.11a
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• pp.170-170
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• 2005