• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.11-17
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• 2000

The low temperature electron mobilities were investigated in Si/$Si_{1-x}Ge_{x}$ modulation Doped (MOD) quantum well structure with thermally grown oxide. N-type Si/$Si_{1-x}Ge_{x}$ structures were fabricated by a gas source MBE. Thermal oxidation was carried out in a dry $O_2$ atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by a Hall effect and a magnetoresistant effect at low temperatures down to 0.4 K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2 DEG) in a tensile strained Si quantum well. The electron sheet density ($n_{s}$) of 1.5${\times}$$10^{12}$[$cm^{-2}$] and corresponding electron mobility of 14200 [$cm^2$$V^{-1}$$s^{-1}$] were obtained at low temperature of 0.4 K from Si/$Si_{1-x}Ge_{x}$ MOD quantum well structure with thermally grown oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.145-145
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• 2011

Light-emitting diodes (LEDs) based on III-nitrides compound semiconductors have achieved a high performance device available for display and illumination sector. However, the conventional c-plane oriented LED structures are still showing several problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. The QCSE results in spatial separation of electron and hole wavefunctions in quantum wells, thereby decreasing the internal quantum efficiency and red-shifting the emission wavelength. Due to demands for improvement of device performance, nonpolar structure has been attracting attentions, since the quantum wells grown on nonpolar templates are free from the QCSE. However, current device performance for nonpolar LEDs is still lower than those for conventional LEDs. In this study, we discuss the potential possibilities of nonpolar LEDs for commercialization. In this study, we characterized current-light output power relation of the a-plane InGaN/GaN LEDs structures with the variation of quantum well structures. On-wafer electroluminescence measurements were performed with short pulse (10 us) and low duty factor (1 %) conditions applied for eliminating thermal effects. The well and barrier widths, and indium compositions in quantum well structures were changed to analyze the efficiency droop phenomenon.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.23-26
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• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• Electronic Materials Letters
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• v.14 no.6
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• pp.774-783
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• 2018

Full maximum-entropy mobility-spectrum analysis (FMEMSA) is the best algorithm among mobility spectrum analyses by which we can obtain a set of partial-conductivities associated with mobility values (mobility spectrum) by analyzing magnetic-field-dependent conductivity-tensors. However, it is restricted to a direct band-gap semiconductor and should be modified for materials with other band structures. We developed the modified version of FMEMSA which is appropriate for a material with a single anisotropic valley, or an indirect-band-gap semiconductor quantum-well with a single non-degenerate conduction-band valley e.g., (110)-oriented AlAs quantum wells with a single anisotropic valley. To demonstrate the reliability of the modified version, we applied it to several sets of synthetic measurement datasets. The results demonstrated that, unlike existing FMEMSA, the modified version could produce accurate mobility spectra of materials with a single anisotropic valley.

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.12-13
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• 2005

• Applied Science and Convergence Technology
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• v.25 no.2
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• pp.36-41
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• 2016

Similarity and diversity of various quantum ring structures are investigated by classifying energy dispersions of three different structures: an electrostatic quantum ring, a magnetic quantum ring, and a magnetic-electric quantum ring. The wave functions and the eigenenergies of a single electron in the quantum ring structures are calculated by solving the Schrdinger equation without any electron-electron interaction. Magnetoconductance is studied by calculating a two-terminal conductance while taking into account the backscattering via the resonance through the states of the quantum rings at the center of a quasi-one dimensional conductor. It is found that the energy spectra for the various quantum ring structures are sensitive to additional electrostatic potentials as well as to the effects of a nonuniform magnetic field. There are also characteristics of similarity and diversity in the energy dispersions and in the single-channel magnetoconductance.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.7-12
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• 2013

We fabricated ZnO-ZnMgO single quantum well (SQW) samples having different well-widths by using the atomic layer deposition technique. The QW samples exhibit different optical transition behaviors with different QW widths. We confirm that when the well-width of 1.5 nm does not have a confined quantum energy level due to the Mg diffusion into the well caused by after-thermal treatment whereas the QWs wider than 1.5 nm show optical transitions between the confined energy levels.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.34-40
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• 1997

Intervalence subband absroption of normally incident infrared radiation in p-type InGaAs-InAlAs coupled quantum well (CQW) is theoretically investigated by the multiband effective mass formalism. By solving a 4*4 luttinger-kohn hamitonian, we calculate valence subband structures, intervalence subband transition matrix elements, and absorption coefficient spectrum in the CQW which consists of a wider well, a thinner well and a barreir between them. Using the flexible design parameters given to the valence band CQW structure, we show that the absorption coefficient profile can be tailored. For a carefully designed CQW, theabsorption coefficient cn be made to maintain a large value over a wider wavelength range of incident infrared radiation compared with that shown in intersubband absorption in usual single quantum well.

• Journal of the korean society of oceanography
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• v.37 no.1
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• pp.45-50
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• 2002

New production (NP) values in well-mixed waters of the Yellow Sea were estimated using two different methods and were compared with each other; one is from the quantum yield model of nitrate uptake and chlorophyll ${\alpha}$-specific light absorption coefficient, and the other is from a traditional $^{15}N$-labelled stable isotope uptake technique. The quantum yields of nitrate uptake were highly variable, ranging from 0.0001 to 0.04 mol $NO_3Ein^{-1}$, and the small values in this study might have resulted from either the partitioning into nitrate uptake of little portions of light energy absorbed by phytoplankton or that phytoplankton may predominantly utilize other N sources (E. G. ammonium and/or urea) than nitrate. The estimates (0.54-8.47 nM $h^{-1}$) of NP from the quantum yield model correlated well ($r^2$=0.67, p<0.1) with those (0.01-4.93 nM $h^{-1}$) obtained using the $^{15}NO_3$ uptake technique. To improve the ability of estimating NP values using this model in the Yellow Sea, more data need to be accumulated in the future over a variety of time and space scales.

• Journal of Communications and Networks
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• v.15 no.2
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• pp.217-221
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• 2013

Quantum low-density parity-check (LDPC) codes based on the Calderbank-Shor-Steane construction have low encoding and decoding complexity. The sum-product algorithm(SPA) can be used to decode quantum LDPC codes; however, the decoding performance may be significantly decreased by the many four-cycles required by this type of quantum codes. All four-cycles can be eliminated using the entanglement-assisted formalism with maximally entangled states (ebits). The proposed entanglement-assisted quantum error-correcting code based on Euclidean geometry outperform differently structured quantum codes. However, the large number of ebits required to construct the entanglement-assisted formalism is a substantial obstacle to practical application. In this paper, we propose a novel class of entanglement-assisted quantum LDPC codes constructed using classical Euclidean geometry LDPC codes. Notably, the new codes require one copy of the ebit. Furthermore, we propose a construction scheme for a corresponding zigzag matrix and show that the algebraic structure of the codes could easily be expanded. A large class of quantum codes with various code lengths and code rates can be constructed. Our methods significantly improve the possibility of practical implementation of quantum error-correcting codes. Simulation results show that the entanglement-assisted quantum LDPC codes described in this study perform very well over a depolarizing channel with iterative decoding based on the SPA and that these codes outperform other quantum codes based on Euclidean geometries.