• 한국토양비료학회지
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• 제46권6호
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• pp.659-664
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• 2013

The aim of this study is to determine the drought stress index through photochemical analysis in red pepper (Capsiumannuum L.). The photochemical interpretation was performed in the basis of the relation between Kautsky effect and Photosystem II (PSII) following the measurement of chlorophyll, pheophytin contents, and $CO_2$ assimilation in drought stressed 5-week-old red pepper plants. The $CO_2$ assimilation rate was severely lowered with almost 77% reduction of chlorophyll and pheophytin contents at four days after non-irrigation. It was clearly observed that the chlorophyll fluorescence intensity rose from a minimum level (the O level), in less than one second, to a maximum level (the P-level) via two intermediate steps labeled J and I (OJIP process). Drought factor index (DFI) was also calculated using measured OJIP parameters. The DFI was -0.22, meaning not only the initial inhibition of PSII but also sequential inhibition of PSI. In real, most of all photochemical parameters such as quantum yield of the electron transport flux from Quinone A ($Q_A$) to Quinone B ($Q_B$), quantum yield of the electron transport flux until the PSI electron acceptors, quantum yield of the electron transport flux until the PSI electron acceptors, average absorbed photon flux per PSII reaction center, and electron transport flux until PSI acceptors per cross section were profoundly reduced except number of QA reducing reaction centers (RCs) per PSII antenna chlorophyll (RC/ABS). It was illuminated that at least 6 parameters related with quantum yield/efficiency and specific energy fluxes (per active PSII RC) could be applied to be used as the drought stress index. Furthermore, in the combination of parameters, driving forces (DF) for photochemical activity could be deduced from the performance index (PI) for energy conservation from photons absorbed by PSII antenna until the reduction of PSI acceptors. In conclusion, photochemical responses and their related parameters can be used as physiological DFI.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.186-186
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• 2012

This report investigates a new synthetic route and the size-dependent optical and electrical properties of PbS nanocrystal quantum dots (NQDs) in diameters ranging between 1.5 and 6 nm. Particularly we synthesize ultra-small sized PbS NQDs having extreme quantum confinement with 1.5~2.9 nm in diameter (2.58~1.5 eV in first exciton energy) for the first time by adjusting growth temperature and growth time. In this region, the Stokes shift increases as decreasing size, which is testimony to the highly quantum confinement effect of ultra-small sized PbS NQDs. To find out the electrical properties, we fabricate self-assembled films of PbS NQDs using layer by layer (LBL) spin-coating method and replacing the original ligands with oleic acid to short ligands with 1, 2-ethandithiol (EDT) in the course. The use of capping ligands (EDT) allows us to achieve effective electrical transport in the arrays of solution processed PbS NQDs. These high-quality films apply to Schottky solar cell made in an glass/ITO/PbS/LiF/Al structure and thin-film transistor varying the PbS NQDs diameter 1.5~6 nm. We achieve the highest open-circuit voltage (＜0.6 V) in Schottky solar cell ever using PbS NQDs with first exciton energy 2.58 eV.

• 한국진공학회지
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• 제20권1호
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• pp.57-62
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• 2011

열처리 방식을 통하여 형성된 FePt 나노 입자를 사용하는 자기 양자점 소자를 제작하고, 전기적 및 자기적 특성을 연구하였다. FePt 자기 양자점 터널링 소자는 p 형 Si 기판 상부에 약 20 nm의 $SiO_2$ 터널 절연막을 형성하고 FePt 박막을 3 nm 두께로 증착한 후에 열처리 방식을 이용하여 8~15 nm 크기의 양자점을 갖는 구조이다. 터널링 소자의 전류-전압 특성을 자기장과 온도 변화에 따라 관찰하였고 특히, 저온에서 비선형적인 전류-전압 곡선을 확인하였으며 이러한 단전자 수송현상을 전자의 hopping 모델과 양자점의 터널링 현상을 이용하여 설명하였다. FePt 양자점 터널링 소자는 20 K에서 터널링 현상을 보였으며, 양단에 가해준 전압과 관계없이 외부 자기장이 증가할수록 음의 자기저항이 커지는 현상을 관찰하였고, 9,000 G에서 약 26.2 %의 자기저항 비를 확인하였다.

• Advances in nano research
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• 제1권1호
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• pp.29-34
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• 2013

The conversion of mechanical energy into electrical energy at nanoscale using piezoelectric nanowire arrays has been in detail shown by deflection of nanowires. Recently it has performed an analytical model, both at classical and at quantum level, for describing the most important quantities concerning transport phenomena; the model predicts interesting peculiarities, as high initial charge diffusion in nanodevices constituting by nanowires and permits also in particular to deduce interesting informations about the devices sensitivity, focusing on the correlation between sensitivity and high initial diffusivity of these materials at nanometric level.

• ALGAE
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• 제20권3호
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• pp.233-238
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• 2005

The photosynthetic parameters of dark- adapted minimum fluorescence (Fo) and maximum quantum yield of charge separation in PSII (Fv/Fm) were measured in transverse sections of eight species of marine Phaeophyceae (species of Laminariales, Fucales, Desmarestiales, Chordariales) using pulse amplified modulation (PAM) fluorometry. Within each transverse section fluorescence was measured in three regions corresponding to outer cortical and meristoderm cells, inner cortical cells and innermost medullary cells. Minimum fluorescence declined from 19-74% (mean of 39%) from outermost to innermost cells. Maximum quantum yield varied from 0.51-0.59 in outermost cell layers and this was reduced to 0.23-0.40 in innermost cell layers, with an average reduction of 50%. Despite the reduction Fo in medullary cells (inner), medullas of all species showed maximum quantum yields consistent with a photosynthetic role in carbon fixation. These results show that medullary cells of complex brown algae have more than a role in structure, storage or transport, and may also provide an important role in carbon fixation.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.607-612
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• 2007

Relationship between charge transfer mechanism and quantum coherence has been investigated using a realtime quantum dynamics approach. In the on-the-fly filtered propagator functional path integral simulation, by separating paths that belong to different mechanisms and by integrating contributions of correspondingly sorted paths, it was possible to accurately obtain quantitative contribution of different transport mechanisms. For a 5'-GAGGG-3' DNA sequence, we analyze charge transfer processes quantitatively such that the governing mechanism alters from coherent to incoherent charge transfer with respect to the friction strength arising from dissipative environments. Although the short DNA sequence requires substantially strong dissipation for completely incoherent hopping transfer mechanism, even a weak system-environment interaction markedly destroys the coherence within the quantum mechanical system and the charge transfer dynamics becomes incoherent to some degree. Based on the forward-backward path deviation analysis, the coherence variation depending on the environment is investigated numerically.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.428-428
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• 2013

Red color light emitting diodes were fabricated using CdSe/CdS/ZnS quantum dots (QDs). Patterned indium-tin-oxide (ITO) was used as a transparent anode, and oxygen plasma treatment on a surface of ITO was performed. Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was spin coated on the ITO surface as a hole injection layer. Then CdSe/CdS/ZnS QDs was spin coated and thermal treatment was performed for the cross-linking of QDs. TiO2 was coated on the QDs as an electron transport layer, and 150 nm of aluminum cathode was formed using thermal evaporator and shadow mask. The device shows a pure red color emission at 606 nm wavelength. Device characteristics will be presented in detail.

• ETRI Journal
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• 제32권4호
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• pp.530-539
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• 2010

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro-fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics-based models, like non-equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit. The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.647-647
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• 2013

We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the structures, energetics and charge transport characteristics of nitrogen-doped graphene and graphene nanoribbons (GNRs) with additional doping of phosphorus or boron atoms. Considering graphitic, pyridinic, and porphrin-like N doping sites and increasing N-doping concentration, we analyze the structures of N-P and N-B doped graphene and particularly focus on how they affect the charge transport along the lateral direction. For the GNRs, we also consider the differences between defects formed at the edge and bulk regions. Implications of our findings in the context of electronic and energy device applications will be also discussed.

• Journal of Information Display
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• 제12권4호
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• pp.219-222
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• 2011

Iridium-(III)-bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^2$' ]picolinate-based blue phosphorescent organic light-emitting diodes with different electron transport materials were fabricated. Each electron transport material had different electron mobilities and triplet energies. The device with 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene had the highest external quantum efficiency (20.1%) and luminous current efficiency (33.1 cd/A) due to its high electron mobility and triplet energy. The operational stability of each device was also compared with that of the others. The device with 2,2',2"(1,3,5-benzenetriyl)tris-(1-phenyl-1H-benzimidazole) was found to have a longer lifetime than the other devices.