• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.5
• /
• pp.393-398
• /
• 2019

A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).

• Nuclear Engineering and Technology
• /
• v.52 no.8
• /
• pp.1817-1825
• /
• 2020

Background: Cosmic ray-induced particles can lead to failure of semiconductors packaged for export during air transport. This work performed MCNP 6.2 simulations to optimize shielding against neutrons and protons induced by cosmic radiation Methods and materials: The energy spectra of protons and neutrons by incident angle at the flight altitude were determined using atmospheric cuboid model. Various candidates for the shielding materials and the geometry of the Unit Load Device Container were evaluated to determine the conditions that allow optimal shielding at all sides of the container. Results: It was found that neutrons and protons, at the flight altitude, generally travel with a downward trajectory especially for the particles with high energy. This indicated that the largest number of particles struck the top of the container. Furthermore, the simulation results showed that, among the materials tested, borated polyethylene and stainless steel were the most optimal shielding materials. The optimal shielding structure was also determined with the weight limit of the container in consideration. Conclusions: Under the determined optimal shielding conditions, a significantly reduced number of neutrons and protons reach the contents inside the container, which ultimately reduces the possibility of semiconductor failure during air transport.

• Journal of Korean Vacuum Science & Technology
• /
• v.7 no.1
• /
• pp.8-12
• /
• 2003

The effects of lattice strain on the magnetic and the transport properties of La$_{0.8}$Sr$_{0.2}$MnO$_3$films grown on a LaAlO$_3$ (001) substrate and on a La$_{0.8}$Sr$_{0.2}$MnO$_3$ layer have been studied. It was observed that the metal-insulator and the ferromagnetic transitions turn out to be at higher temperatures for the film deposited on La$_{0.8}$Sr$_{0.2}$MnO$_3$ layer with respect to that on LaAlO$_3$. The dependence of Curie temperature on the bulk and the Jahn-Teller strains has also been determined. determined.

• Journal of Sensor Science and Technology
• /
• v.32 no.6
• /
• pp.455-461
• /
• 2023

We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

• Proceedings of the Korean Nuclear Society Conference
• /
• 2004.10a
• /
• pp.81-82
• /
• 2004

• Proceedings of the Korean Nuclear Society Conference
• /
• 2003.10a
• /
• pp.54.1-54.1
• /
• 2003

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.432.2-432.2
• /
• 2014

Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.4
• /
• pp.327-332
• /
• 2009

In the devices structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) /tris (8-hydroxyquinoline)aluminum$(Alq_3)$electron-transport-layer(ETL)(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP))/Al, we have studied the efficiency improvement of organic light-emitting diodes depending on the thickness variation of BCP using electron transport layer. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm under a base pressure of $5{\times}10^{-6}$ Torr using at thermal evaporation, respectively. The TPD and $Alq_3$ layer were evaporated to be deposition rate of $2.5{\AA}/s$. And the BCP was evaporated to be a4 a deposition of $1.0{\AA}/s$. As the experimental results, we found that the luminous efficiency and the external quantum efficiency of the device is superior to others when thickness of BCP is 5 nm. Also, operating voltage is lowest. Compared to the ones from the devices without BCP layer, the luminous efficiency and the external quantum efficiency were improved by a factor of four hundred ninty and five hundred, respectively. And operating voltage is reduced to about 2 V.

• Applied Science and Convergence Technology
• /
• v.25 no.2
• /
• pp.36-41
• /
• 2016

Similarity and diversity of various quantum ring structures are investigated by classifying energy dispersions of three different structures: an electrostatic quantum ring, a magnetic quantum ring, and a magnetic-electric quantum ring. The wave functions and the eigenenergies of a single electron in the quantum ring structures are calculated by solving the Schrdinger equation without any electron-electron interaction. Magnetoconductance is studied by calculating a two-terminal conductance while taking into account the backscattering via the resonance through the states of the quantum rings at the center of a quasi-one dimensional conductor. It is found that the energy spectra for the various quantum ring structures are sensitive to additional electrostatic potentials as well as to the effects of a nonuniform magnetic field. There are also characteristics of similarity and diversity in the energy dispersions and in the single-channel magnetoconductance.

• Applied Science and Convergence Technology
• /
• v.23 no.1
• /
• pp.1-13
• /
• 2014

Semiconductor quantum structures are often characterized by their energy gaps which are modified by the quantum size effect. Energy levels in semiconductors can be realized by optical transitions within confined structures. Photoluminescence spectroscopy in magnetic fields at low temperatures has proved to be a powerful technique for investigating the electronic states of quantum semiconductor heterostructures and offers a complimentary tool to electrical transport studies. In this review, we examine comprehensive investigations of magneto-excitonic and Landau transitions in a large variety of undoped and doped quantum-well structures. Strong magnetic fields change the diamagnetic energy shift of free excitons from quadratic to linear in B in undoped single quantum well samples. Two-dimensional electron gas induced by modulation doping shows pronounce quantum oscillations in integer quantum Hall regime and discontinuous transition at ${\nu}=1$. Such discontinuous transition can be explained as the formation of spin waves or Skyrmions.