• Title/Summary/Keyword: quantum phase

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Si(111) 기판에 높은 공간밀도를 갖는 InN 양자점 핵생성 연구

  • Lee, Hyeon-Jung;Jo, Byeong-Gu;Lee, Gwan-Jae;Choe, Il-Gyu;Kim, Jin-Su;Im, Jae-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.227-227
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    • 2013
  • 본 연구에서는 Si(111) 기판에 성장온도 및 InN 증착양 변화에 따른 InN 양자점(Quantum Dot) 핵성생(Nucleation) 특성에 대해 논의한다. InN 양자점은 Nitrogen-Plasma 소스를 장착한 분자선증착기(MBE)를 이용하여 $0.103{\AA}/s$의 성장속도로 성장하였다. 성장온도를 $700^{\circ}C$에서 $300^{\circ}C$로 변환하면서 형성한 시료에서 lnN 양자점의 공간밀도는 $9.4{\times}10^7/cm^2$부터 $1.1{\times}10^{11}/cm^2$를 나타냈다. 가장 높은 공간밀도인 $1.1{\times}10^{11}/cm^2$는 기존에 보고된 값 ($7.7{\times}10^{10}/cm^2$)보다 상대적으로 높은 값을 갖는다 [1,2]. InN 증착양을 93, 186, 및 $372{\AA}/s$으로 각각 변화시켜 형성하여 양자점의 초기 성장거동을 분석하였다. InN 증착양이 증가함에 따라 양자점의 공간밀도는 $4.4{\times}10^{10}/cm^2$$6.4{\times}10^{10}/cm^2$까지 증가하였다. 일반적으로 InP 및 GaAs 기판을 기반으로 한 In(Ga)As 양자점은 증착양이 증가함에 따라 밀도는 감소하고 크기는 증가하는 경향을 보이며, 이는 같은 상 (Phase)을 갖는 물질들끼리 결합하려는 경향이 있기 때문이다. 본 실험에서는 기존 결과와 다른 경향을 보이고 있는데, 이는 Si(111) 기판과 InN 사이의 격자부정합이 상대적으로 크기 때문에 InN 양자구조가 커지는 대신 추가로 새로운 핵생성 메커니즘에 의한 것으로 설명할 수 있다. 이러한 InN 증착양에 따른 InN 양자점 성장거동을 표면에너지를 포함한 이론적인 모델을 통해 논의하고자 한다.

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Effect of Annealing Temperature on the Luminescence Properties of Digital-Alloy InGaAlAs Multiple Quantum Wells (디지털 합금 InGaAlAs 다중 양자 우물의 열처리 온도에 따른 발광 특성)

  • Cho, Il Wook;Byun, Hye Ryoung;Ryu, Mee-Yi;Song, Jin Dong
    • Journal of the Korean Vacuum Society
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    • v.22 no.6
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    • pp.321-326
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    • 2013
  • The effect of rapid thermal annealing (RTA) on the optical properties of digital-alloy InGaAlAs multiple quantum well (MQW) structures have been investigated by using photoluminescence (PL) and time-resolved PL measurements as a function of RTA temperature. The MQW samples were annealed from $700^{\circ}C$ to $850^{\circ}C$ for 30 s in a nitrogen atmosphere. The MQW sample annealed at $750^{\circ}C$ exhibited the strongest PL intensity and the narrowest FWHM (Full width at half maximum), indicating the reduced nonradiative recombination centers and the improved interfaces between the wells and barriers. The MQW samples annealed at $800^{\circ}C$ and $850^{\circ}C$ showed the decreased PL intensities and blueshifted PL peaks compared to $750^{\circ}C$-annealed sample. The blueshift of PL peak with increasing RTA temperatures are ascribed to the increase of aluminum due to intermixing of gallium (Ga) and aluminum (Al) in the interfaces of InGaAs/InAlAs short-period superlattices. The decrease of PL intensity after annealing at $800^{\circ}C$ and $850^{\circ}C$ are attributed to the interface roughening and lateral composition modulation caused by the interdiffusion of Ga and Al and indium segregation, respectively. With increasing RTA temperature the PL decay becomes slower, indicating the decrease of nonradiative defect centers. The optical properties of digital-alloy InGaAlAs MQW structures can be improved significantly with optimum RTA conditions.

Fabrication and characterization of InGaAsP/InP multi-quantum well buried-ridge waveguide laser diodes (Buried-Ridge Waveguide Laser Diode 제작 및 특성평가)

  • 오수환;이지면;김기수;이철욱;고현성;박상기
    • Korean Journal of Optics and Photonics
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    • v.14 no.6
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    • pp.669-673
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    • 2003
  • We fabricated a buried-ridge waveguide laser diode (B-RWG LD) which has more advantages for obtaining lateral single mode operation on the same ridge width and for the planarization of the device surface, compared to the conventional RWG LD. In this LD, the difference of the lateral effective refractive index can be controlled by the thickness of the InGaAsP layer which is grown on the active and the p-InP layers. The InGaAsP multiple quantum well was grown on a n-InP substrate by the CBE. The buried ridge structure was formed by selective wet etchings, followed by liquid phase epitaxy methods. The fabricated LD with the ridge width of 7 ${\mu}{\textrm}{m}$ showed a linear increase of the optical power up to 20 ㎽ without any kinks and a saturated output power of more than 80 ㎽. By measuring the far field pattern, we demonstrate that LDs with the ridge widths of 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$ were operated in a lateral single mode up to 2.7I$_{th}$ and 2.4I$_{th}$, respectively.ely.

Preparation of Biopolymer coated Magnetite And Magnetic Biopolymer Microsphere Particles for Medical Application (의학적 응용을 위한 생체 고분자로 피복 된 자성 나노 입자와 미소구체의 제조)

  • Ko, Sang-Gil;Cho, Jun-Hee;Ahn, Yang-kyu;Song, Ki-Chang;Choi, Eun-Jung
    • Journal of the Korean Magnetics Society
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    • v.16 no.4
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    • pp.221-227
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    • 2006
  • We have synthesized uniform nanometer sized magnetite particles using chemical coprecipitation technique through a sonochemical method with surfactant such as oleic acid. Magnetite phase nanoparticles could be observed from X-ray diffraction. Magnetite nanoparticles is surface phase morphology and biopolymer-microspheres for Application Medical. Magnetite nanoparticles coated biopolymer. Atomic Force Microscope (AFM) was used to image the coated nanoparticles. Magnetic colloid suspensions containing particles with sodium oleate, chitosan and $\beta$-glucan have been prepared. The morphology of the magnetic biopolymer microsphere particles were characterized using optical microscope. Magnetic hysteresis measurement were performed using a superconducting quantum interference device (SQUID) magnetometer at room temperature to investigate the magnetic properties of the biopolymer microspheres and magnetite coated biopolymer including magnetite nanoparticles. Magnetic Resonance (MR) imaging was used to investigate biopolymer coated nanoparticles and biopolymer microspheres.

Development of Novel Materials for Reduction of Greenhouse Gases and Environmental Monitoring Through Interface Engineering

  • Hirano, Shin-Ichi;Gang, Seok-Jung L.;Nowotny, Janusz-Nowotny;Smart, Roger-St.C.Smart;Scrrell, Charles-C.Sorrell;Sugihara, Sunao;Taniguchi, Tomihiroi;Yamawaki, Michio;Yoo
    • Korean Journal of Materials Research
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    • v.9 no.6
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    • pp.635-653
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    • 1999
  • The present work considers work considers research strategies to address global warming. Specifically, this work considers the development of technologies of importance for the reduction of greenhouse gas emission and, especially, the materials that are critical to these technologies. It is argued that novel materials that are essential for the production of environmentally friendly energy may be developed through a special kind of engineering: interface engineering, rather than through classical bulk chemistry. Progress on the interface engineering requires to increase the present state of understanding on the local properties of materials interfaces and interfaces processes. This, consequently, requires coordinated international efforts in order to establish a strong background in the science of materials interfaces. This paper considers the impact of interfaces, such as surfaces and grain boundaries, on the functional properties of materials. This work provides evidence that interfaces exhibit outstanding properties that are not displayed by the bulk phase. It is shown that the local interface chemistry and structure and entirely different than those of the bulk phase. In consequence the transport of both charge and matter along and across interfaces, that is so important for energy conversion, is different than that in the bulk. Despite that the thickness of interfaces is of an order to a nanometer, their impact on materials properties is substantial and, in many cases, controlling. This leads to the conclusion that the development of novel materials with desired properties for specific industrial applications will be possible through controlled interface chemistry. Specifically, this will concern materials of importance for energy conversion and environmental monitoring. Therefore, there is a need to increase the present state of understanding of the local properties of materials interfaces and the relationship between interfaces and the functional properties of materials. In order to accomplish this task coordinated international efforts of specialized research centres are required. These efforts are specifically urgent regarding the development of materials of importance for the reduction of greenhouse gases. Success of research in this area depends critically on financial support that can be provided for projects on materials of importance for a sustainable environment, and these must be considered priorities for all of the global economies. The authors of the present work represent an international research group economies. The authors of the present work represent an international research group that has entered into a collaboration on the development of the materials that are critical for the reduction of greenhouse gas emissions.

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Determination of the complex refractive index of $Ge_2Sb_2Te_5$ using spectroscopic ellipsometry (분광타원해석법을 이용한 $Ge_2Sb_2Te_5$ 의 복소굴절율 결정)

  • Kim, S. J.;Kim, S. Y.;Seo, H.;Park, J. W.;Chung, T. H.
    • Korean Journal of Optics and Photonics
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    • v.8 no.6
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    • pp.445-449
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    • 1997
  • The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

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Theoretical Study of Thiazole Adsorption on the (6,0) zigzag Single-Walled Boron Nitride Nanotube

  • Moradi, Ali Varasteh;Peyghan, Ali Ahmadi;Hashemian, Saeede;Baei, Mohammad T.
    • Bulletin of the Korean Chemical Society
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    • v.33 no.10
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    • pp.3285-3292
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    • 2012
  • The interaction of thiazole drug with (6,0) zigzag single-walled boron nitride nanotube of finite length in gas and solvent phases was studied by means of density functional theory (DFT) calculations. In both phases, the binding energy is negative and presenting characterizes an exothermic process. Also, the binding energy in solvent phase is more than that the gas phase. Binding energy corresponding to adsorption of thiazole on the BNNT model in the gas and solvent phases was calculated to be -0.34 and -0.56 eV, and about 0.04 and 0.06 electrons is transferred from the thiazole to the nanotube in the phases. The significantly changes in binding energies and energy gap values by the thiazole adsorption, shows the high sensitivity of the electronic properties of BNNT towards the adsorption of the thiazole molecule. Frontier molecular orbital theory (FMO) and structural analyses show that the low energy level of LUMO, electron density, and length of the surrounding bonds of adsorbing atoms help to the thiazole adsorption on the nanotube. Decrease in global hardness, energy gap and ionization potential is due to the adsorption of the thiazole, and consequently, in the both phases, stability of the thiazole-attached (6,0) BNNT model is decreased and its reactivity increased. Presence of polar solvent increases the electron donor of the thiazole and the electrophilicity of the complex. This study may provide new insight to the development of functionalized boron nitride nanotubes as drug delivery systems for virtual applications.

Effect of Compost Application Level on Seedling Growth of Panax ginseng C. A. Meyer

  • Yeon, Byeong-Yeol;Hyun, Dong-Yun;Hyun, Geun-Su;Park, Chun-Geun;Kim, Tae-Soo;Cha, Seon-Woo;Lee, Sung-Woo
    • Korean Journal of Medicinal Crop Science
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    • v.15 no.2
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    • pp.138-141
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    • 2007
  • Good quality seedlings produced in the seedbed of Yangjik, traditional seedling cultivation, is one of the most important factors in determining the yield and quality of $4{\sim}6-year-old$ ginseng. This study was carried out to substitute Yacto, traditional organic fertilizer, for economical compost in the cultivation of seedling by fertilizing relatively little amount of compost into seedbed soil. Bulk density and solid phase were decreased in physical properties of seedbed soil, while air phase and porosity were increased by more addition of compost. When the amount of applied compost in seedbed soil was above $8{\ell}$ per Kan, the contents of nutrient were exceeded the range of optimal standard for ginseng cultivation. Chlorophyll content and stem length were increased by more addition of compost, while the length and the width of leaves showed the highest value at the application level of $8{\ell}$ per Kan. Heat injury was also increased distinctly above the application level of $8{\ell}$ per Kan. The number of first grade seedlings and usable seedlings, and fresh root weight per plant showed the peak at application level of $8{\ell}$ per Kan, respectively. Fertilizing the compost of $8{\ell}$ per Kan into seedbed soil was the optimal amount for producing the good quality seedlings.

Enhanced Magnetic Properties of BiFe1-$_xNi_xO_3$

  • Yoo, Y.J.;Hwang, J.S.;Park, J.S.;Kang, J.H.;Lee, B.W.;Lee, S.J.;Kim, K.W.;Lee, Y.P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.183-183
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    • 2011
  • Multiferroic materials have been widely studied in recent years, because of their abundant physics and potential applications in the sensors, data storage, and spintronics. $BiFeO_3$ is one of the well-known single-phase multiferroic materials with $ABO_3$ structure and G-type antiferromagnetic behavior below the Neel temperature $T_N$ ~ 643 K, but the ferroelectric behavior below the Curie temperature $T_c$~1,103 K. In this study, the $BiFe_{1-x}Ni_xO_3$ (x=0 and 0.05) bulk ceramics were prepared by solid-state reaction and rapid sintering with high-purity $Bi_2O_32$, $Fe_3O_4$ and NiO powders. The powders of stoichiometric proportions were mixed, as in the previous investigations, and calcined at 450$^{\circ}C$ for $BiFe_{1-x}Ni_xO_3$ for 24 h. The obtained powders were grinded, and pressed into 5-mm-thick disks of 1/2-inch diameter. The disks were directly put into the oven, which has been heated up to 800$^{\circ}C$ and sintered in air for 20 min. The sintered disks were taken out from the oven and cooled to room temperature within several min. The phase of samples was checked at room temperature by powder x-ray diffraction using a Rigaku Miniflex diffractometer with Cu K${\alpha}$ radiation. The Raman measurements were carried out by employing a hand-made Raman spectrometer with 514.5-nm-excitation $Ar^+$ laser source under air ambient condition on a focused area of 1-${\mu}m$ diameter. The field-dependent magnetization measurements were performed with a superconducting quantum-interference-device magnetometer.

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Theoretical Investigation on Collinear Phase Matching Stimulated Polariton Scattering Generating THz Waves with a KTP Crystal

  • Tan, Lian;Yuan, Bin;Li, Yongjun;Wang, Silei;Zhang, Hongtao;Bing, Pibin;Yao, Jianquan;Li, Zhongyang
    • Current Optics and Photonics
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    • v.3 no.4
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    • pp.342-349
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    • 2019
  • We present a theoretical research concerning terahertz (THz) wave generation with $KTiOPO_4$ (KTP) by collinear phase matching (CPM) stimulated polariton scattering (SPS). Both CPM and corresponding nonzero nonlinear coefficients can be simultaneously realized with $s{\rightarrow}f+f$ in yz plane, $s{\rightarrow}f+s$ with ${\theta}$ < ${\Omega}$ in xz plane and $s{\rightarrow}f+f$ with ${\theta}$ < ${\Omega}$ in xz plane. The effective nonlinear coefficients including electronic nonlinearities and ionic nonlinearities are calculated. Based on the parameter values of refractive indices, absorption coefficients and effective nonlinear coefficients, we simulate THz wave intensities generated with CPM SPS by solving coupled wave equations and give the relationship among the maximum THz wave intensity, optimal crystal length and the angle ${\theta}$. The calculation results demonstrate that CPM SPS with KTP can generate THz waves with high intensities and quantum conversion efficiencies.