• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.37-43
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• 2009

Temperature and injection current dependence of electroluminescence(EL) spectral intensity of the $In_xGa_{1-x}N$/GaN multi-quantum wells(MQW) have been studied over a wide temperature range and as a function of injection current level. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents shows a drastic difference. This unique EL efficiency variation pattern with temperature and current can be explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields. Increase of the indium content in $In_xGa_{1-x}N$/GaN multiple quantum wells gives rise to a redshift of 80 meV and 22 meV for green and blue MQW, respectively. It can be explained by carrier localization by potential fluctuation of multiple quantum well and MQW structures also shows a keen difference owing to the different indium content in InGaN/GaN MQW.

• ETRI Journal
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• v.43 no.5
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• pp.909-915
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• 2021

GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer-scale characteristics. The surface morphology and electron channeling contrast imaging (ECCI) were used to analyze the material quality of GaAs films. Only 3-㎛ bowing was observed using the 725-㎛-thick Si substrate. The bowing shows similar levels among the samples with DFLs, indicating that the Si substrate thickness mostly determines the bowing. According to the surface morphology and ECCI results, the compressive strained indium gallium arsenide/GaAs DFLs show an atomically flat surface with a root mean square value of 1.288 nm and minimum threading dislocation density (TDD) value of 2.4×10⁷ cm^-2. For lattice-matched DFLs, the indium gallium phosphide/GaAs DFLs are more effective in reducing the TDD than aluminum gallium arsenide/GaAs DFLs. Finally, we found that the strained DFLs can block propagate TDD effectively. The strained DFLs on the 725-㎛-thick Si substrate can be used for the large-scale integration of GaAs on Si with less bowing and low TDD.

• Korean Journal of Optics and Photonics
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• v.8 no.2
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• pp.122-127
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• 1997

The hexagonal wurtzite structure of CdSe quantum dots are investigated by X-ray diffraction experiment. The absorption peaks due to quantum confinement effect are observed in the linear absorption spectra. Absorption coefficient changes at the lowest transition are measured with pump wavelength at the lowest transition and at the next higher transition from which direct intraband transition is not allowed. The measured larger absorption changes at the lowest transition confirm that the selection rules of intraband transition resulting from quantum confinement effect are satisfied. From the experimental results, therefore, we concluded that the CdSe quantum dots can be described as homogeneous system.

• Korean Journal of Optics and Photonics
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• v.16 no.6
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• pp.481-484
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• 2005

Quantum ghost imaging uses quantum mechanically entangled photons to form an image of an object. The quantum ghost image is also obtained by means of classical coincidence measurements with a classically correlated light source[1,2]. In this work we performed classical coincidence imaging experiments with classically correlated beams in their direction of propagation. We observed the ghost interference patterns which were usually made by quantum mechanically entangled states and we also analyze in detail the mechanism of the ghost imaging with classically correlated lights. We made? the classically correlated source with an Ar laser and controlled the direction of the light by a mirror? mounted on a small speaker.

• Korean Journal of Optics and Photonics
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• v.21 no.3
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• pp.111-117
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• 2010

A 780 nm monolithic individually addressable 8-beam diode laser with 10mW optical power was developed for use in a laser scanning unit. Beam to beam spacing is $30\;{\mu}m$ and an air bridge interconnection process was developed for individual operations. From electrical and optical characteristic measurements, the developed device is a suitable optical source for a high speed laser scanning unit in multi-function printing systems and laser beam printers.

• Korean Journal of Optics and Photonics
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• v.10 no.1
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• pp.80-86
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• 1999

The theoretical modeling of free carrier absorption in quantum wells grown on anisotropic materials is presented for the first time. The intersubband and intrasubband free carrier absorption are distinguished and the contribution of each subband to them is calculated separately. The calculated results are compared with the experimental values of $\delta$-doped Si quantum wells in literature.

• Korean Journal of Optics and Photonics
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• v.29 no.2
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• pp.64-69
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• 2018

In this work, we derive a general lower bound to concurrence of an arbitrary mixture of two pure states, that is, rank-two multipartite quantum states. We show that the lower bound can tightly detect entanglement of rank-two states, and also can be implemented experimentally with present-day technologies, i.e. single-copy level measurement and classical post-processing.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.103-106
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• 2003

The microscopic quantum Langevin equations for two-level atom electric dipole systems are derived. starting from the microscopic interaction Hamiltonian of the systems. By averaging those microscopic equations over a macroscopic region, the macroscopic quantum Langevin equations are derived and the effect of local-field corrections on the two-level systems is investigated.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.329-330
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• 2007

Today some many types of 3D display are developed but that are not possibly multiviewer, multiview and full parallax. Our new research work uses the Quantum optic to develop 3D display. Quantum mechanically, we can think of the first photon making a virtual transition to the second state. If the second photon appears within the lifetime of that state, the absorption sequence to the third level can be completed. When the electron, located in the third state, shifts to the first state, that electron emits one visible photon. We controlled the two invisible lights to draw a pixel in volume.

• Current Optics and Photonics
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• v.1 no.6
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• pp.626-630
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• 2017

GaN-based green light-emitting diode (LED) structures suffer from low internal quantum efficiency (IQE), known as the "green gap" problem. The IQE of LED structures is expected to be improved to some extent by exploiting the Purcell effect. In this study, the Purcell effect on the IQE of green LED structures is investigated numerically using a finite-difference time-domain simulation. The Purcell factor of flip-chip LED structures is found to be more than three times as high as that of epi-up LED structures, which is attributed to the high-reflectance mirror near the active region in the flip-chip LED structures. When the unmodified IQE is 20%, the relative enhancement of IQE can be greater than 50%, without utilizing the surface-plasmon coupling effect. Based on the simulation results, the "green gap" problem of GaN-based green LEDs is expected to be mitigated significantly by optimizing flip-chip LED structures to maximize the Purcell effect.