• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.342-354
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• 2013

The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.27-31
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• 2004

Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanicalmodels. Gate tunneling current in fully-depleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated $I_G-V_G$ of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.

• 한국자기공명학회논문지
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• 제8권2호
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• pp.108-114
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• 2004

Recently a new method for magnetic resonance imaging based on the detection of relatively strong signal from intermolecular multiple quantum coherences (iMQCs) is reported. Such a signal would not be observable in the conventional framework of magnetic resonance; it originates in long-range dipolar couplings that are traditionally ignored. In this paper, we present the results of experimental studies to assess the feasibility of intermolecular double quantum coherences (iDQCs) imaging in humans. We show that the iDQC images are readily observable at 4T and that they do indeed provide different contrast than appears in conventional images.

• Journal of information and communication convergence engineering
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• 제5권1호
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• pp.45-49
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• 2007

The analytical transport model in subthreshold regime for double gate MOSFET has been presented to analyze the short channel effects such as subthreshold swing, threshold voltage roll-off and drain induced barrier lowering. The present approach includes the quantum tunneling of carriers through the source-drain barrier. Poisson equation is used for modeling thermionic emission current, and Wentzel-Kramers-Brillouin approximations are applied for modeling quantum tunneling current. This model has been used to investigate the subthreshold operations of double gate MOSFET having the gate length of the nanometer range with ultra thin gate oxide and channel thickness under sub-20nm. Compared with results of two dimensional numerical simulations, the results in this study show good agreements with those for subthreshold swing and threshold voltage roll-off. Note the short channel effects degrade due to quantum tunneling, especially in the gate length of below 10nm, and DGMOSFETs have to be very strictly designed in the regime of below 10nm gate length since quantum tunneling becomes the main transport mechanism in the subthreshold region.

• 전자공학회논문지A
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• 제29A권3호
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• pp.59-65
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• 1992

In this paper, the Numerov method is applied to solve the Schroedinger equation for $Al_{0.3}Ga_{0.7}AS/GaAs/Al_{0.3}Ga_{0.7}As$ double-heterojunction HEMT structures. The 3 subband energy levels, corresponding wave functions, 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. In addition, 2-dimensional electron gas densities in a quantum well of double heterostructure are calculated as a function of applied gate voltage. The density in the double heterojunction quantum well is increased to about more than 90%, however, the transconductance of the double heterostructure HEMT is not improved compared to that of the single heterostructure HEMT. Thus, double-heterojunction structures are expected to be suitable to increase the current capability in a HEMT device or a power HEMT structure.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1993년도 춘계학술대회
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• pp.86-89
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• 1993

Breakthrough of single-quantum coherence is shown to occur even after application of a double-quantum filter with Bax's four-step phase-cycling scheme. The reason for this breakthrough is investigated and a method for its elimination is theoretically developed and experimentally demonstrated.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.17-24
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• 2004

Density-gradient 방법을 이용하여 게이트의 양자효과가 double-gate MOSFET의 단채널 효과에 미치는 영향을 2차원으로 분석하였다. 게이트와 sidewall 산화막 경계면에서 발생하는 2차원 양자공핍 현상에 의하여 게이트 코너에 큰 전하 다이폴이 형성되며 subthreshold 영역에서 다이폴의 크기가 증가하고 classical 결과에 비하여 전자 농도와 전압 분포가 매우 다름을 알 수 있었다. Evanescent-nude분석을 통하여 게이트의 양자효과가 소자의 단채널 효과를 증가시키며 이는 기판에서의 양자효과에 의한 영향보다 크다는 것을 확인하였다. 양자효과에 의하여 게이트 코너에 형성되는 전하 다이폴이 단채널 효과를 증가시키는 원인임을 밝혔다.

• 대한전자공학회논문지SD
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• 제45권10호
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• pp.15-22
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• 2008

기존의 MOSFET는 단채널 현상의 증가로 인하여 스케일링에 한계를 가지고 있다. Double-Gate MOSFET (DG-MOSFET)는 소자의 길이가 축소되면서 나타나는 단채널 현상을 효과적으로 제어하는 차세대 소자이다. DG-MOSFET으로 소자를 축소시키면 채널 길이가 10nm 이하에서 게이트 방향뿐만 아니라 소스와 드레인 방향에서도 양자 효과가 발생한다. 또한 게이트 길이가 매우 짧아지면 ballistic transport 현상이 발생한다. 따라서 본 연구에서는 2차원 양자 효과와 ballistic transport를 고려하여 DG-MOSFET의 특성을 분석하였다. 또한 단채널 효과를 줄이기 위해서 $t_{si}$와 underlap 그리고 lateral doping gradient를 이용하여 소자 구조를 최적화하였다.

• ETRI Journal
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• 제32권4호
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• pp.530-539
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• 2010

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro-fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics-based models, like non-equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit. The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.917-920
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• 1999

Modal transmission-line theory is described for guided electron waves in quantum-well structures. To demonstrate the validity and usefulness of this approach, we evaluate the propagation characteristics and the coupling properties of electron guiding couplers consisting of double quantum-wells (DQWs).