• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.35-42
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• 1990

In the present investigation, ceramic PZT and Polymer were prepared. The former is Pb[(Sn1/2Sb1/2)0.1 Ti0.27Zr0.63]O3 including Pb(Sn1/2Sb1/2)O3 with good pyroelectric effect, and the latter PVA(Poly Vinyl Alcohol) with good plasticity. Then, they were fabricated to be flat by using 0-3 connectivity which is rather easily fabricated and capable of making thin film, extending surface area among the connectivities. Such were applied to the sample as variation of intensity of poling field, poling temperature, volume fraction between ceramic and polymer. Then dielectric constant, pyroelectric current, pyroelectric coefficient and the figure of merit were measured. And then their effects on pyroelectric characteristics were observed.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.748-760
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• 1995

Pyroelectric properties, figure of merits, and the other properties of the Pb(Zn1/3Nb2/3)O3-Pb(Fe1/2Nb1/2)O3 system, as expected to have excellent pyroelectric properties in the operating temperature range of pyroelectric type infrared sensor, were investigated. In the Pb(Zn1/3Nb2/3)O3-Pb(Fe1/2Nb1/2)O3 system, suppression of the pyrochlore phase depended on sintering condition, as like sintering temperature, holding time, sintering atmosphere. The specimen, sintered by the same composition atmosphere powder at 105$0^{\circ}C$ for 1.5h, possessed the best physical property. It was found that the piezoelectric parameters were mainly depended on the amount of spontaneous polarization and then the 0.2PZN-0.8PFN showed the best pyro- and piezoelectric properties. In terms of the experimental method, two pyroelectric-testing methods, i.e. static and dynamic methods, had a same tendency. Also the result of pyroelectric testing by the static method indicated that the diffuse phase transitiion resulted in the temperature difference of phase transition between dielectric constant and pyroelectric coefficient.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1121-1124
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• 2003

PZT(30/70) thick film was fabricated by using 1,3 propanediol-based sol-gel method. Prepared film of pyroelectric property was investigated by Dynamic method of modulation frequency dependence. Pyroelectric coefficient was obtained about 5.0$\times$10$^{-8}$ C/$\textrm{cm}^2$.K. The figure of merits for voltage responsivity and specific detectivity were 3.4$\times$10$^{-11}$ C.cm/J and 5.9$\times$10$^{-9}$ C.cm/J, respectively, because of relative high-dielectric constant and high-pyroelectric coefficient. Voltage responsivity was increased at low modulation frequency and it was decreased at high modulation frequency. Voltage responsivity was maximum 1.84 V/W at 10 Hz. As Johnson noise is dominant, Noise voltage was increased nearly proportional to f$^{-1}$ 2/. Noise equivalent power and specific detectivity were 2.83$\times$10$^{-7}$ W/Hz$^{1}$2/ and 3.13$\times$10$^{5}$ cm.Hz$^{1}$2//W the same frequency at 80 Hz, respectively.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.541-547
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• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.35-42
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• 2002

Modulation frequency dependences of the pyroelectric properties of PLT (P $b_{1-x}$ L $a_{x}$ $Ti_{1-x}$ 4/ $O_3$) thin films with La concentrations of 5, 10 and 15㏖% have been investigated by using the dynamic method. The PLT thin film with 10㏖% of the La concentration (PLT(10) thin film) shows the most excellent pyroelectric properties among the films. For PLT(10) thin film, the pyroelectric coefficient shows the maximum value of 6.6$\times$10$^{-9}$ C/$\textrm{cm}^2$ㆍK without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03$\times$10$^{-11}$ Cㆍcm/J and 1.46$\times$10$^{-9}$ Cㆍcm/J, respectively. Voltage responsivity corresponding to the pyroelectric voltage is almost constant at low modulation frequency and decreases in proportional to frequency at high modulation frequency. Voltage responsivity is 5.15 V/W at 8Hz. Noise equivalent power (NEP) and specific detectivity ( $D^{*}$) of the PLT(10) thin film are 9.93$\times$10$^{-8}$ W/H $z^{1}$2/ and 1.81$\times$10$^{6}$ cmH $z^{1}$2/W at the frequency of 100Hz, respectively. The results indicate that PLT(10) thin film is very suitable for pyroelectric IR sensors.s.s.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.609-612
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• 1998

Pyroelectric properties of rhombohedral $Pb(ZrxTi_1-x)O_3ceramics$ with various Zr/Ti ratios of 84/16, 87/13, 90/10, and 93/7 are investigated using dynamic method. The response characteristics of PZT samples are examined by considering frequency dispersion. Since the reorientation of the grain does not the influence on the increase of frequency at low frequency (2~200Hz), the maximum pyroelectric response can be obtained with the change of spontaneous polarization. However, the pyroelectric response of PZT samples could be reduced as the spontaneous polarization decreases due to the restrain of the reorientation of the grain with the increasing of requency at high frequency (200~2000Hz). We have obtained the good pyroelectric response in the PZT sample having 84/16 Zr/Ti ratio, then the pyroelectric coefficient (${\gamma}$) and the figure of merit (FV) were $17.3nC/\textrm{cm}^2K$ and 2.28$\times$10-11Ccm/J, respectively. The noise equivalent power (NEP), the detectivity (D*) were 1.21$\times$10-7W/Hz$\frac{1}{2}$ and 8.26$\times$106cmHz$\frac{1}{2}$/W, respectively.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.679-684
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• 1998

Dielectricand pyroelectric properties of {{{{ { { {Ba }_{0.67 }Sr }_{0.33 } }`TiO_{3 } ^{ } }} (BST) thin plates and films were investigated. For BST thin plates maximum dielectric constant and pyrolelectric coefficient were observed at around 24$^{\circ}C$ and pyroelectric characteristics were improved as applied bias field was increased. When the electric field of 4kV/cm was applied to the thin plates sintered at 140$0^{\circ}C$ the pyroelectric coefficients over 4$\times$10-7C/{{{{ { cm}^{2 }K }} were obtained in the range of 0-4$0^{\circ}C$ BST thin films deposited using rf magnetron sputtering showed [001] preferred orientation at substrate temperatures above 50$0^{\circ}C$ On the contrary to the thin plates the dielectric constants of the thin films gradually increased above 15$^{\circ}C$ and decreased as applied bias field in-creased. The pyroelectric coefficients of thin films were lower than 1/10 those of thin plates.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.9-15
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• 2004

PZT(30/70) thick film was fabricated by using 1,3 propanediol-based sol-gel method. Prepared film of pyroelectric property was investigated by Dynamic method of modulation frequency dependence. Pyroelectric coefficient was obtained about $5.0{\times}10^{-8}\;C/cm^2{\cdot}K$. The figure of merits for voltage responsively and specific detectivity were $3.4{\times}10^{-11}\;C{\cdot}cm/J$ and $5.9{\times}10^{-9}\;C{\cdot}cm/J$, respectively, because of relative high-dielectric constant and high-pyroelectric coefficient. Voltage responsively was increased at low modulation frequency and it was decreased at high modulation frequency. Voltage responsively was maximum 1.84 V/W at 10Hz. As Johnson noise is dominant, Noise voltage was increased nearly proportional to $f^{-1/2}$. Noise equivalent power and specific detectivity were $2.83{\times}10^{-7}\;W/Hz^{1/2}$ and 3.13{\times}10^5\;cm{\cdot}Hz^{1/2}/W$ the same frequency at 80Hz, respectively.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.605-608
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• 1998

In this paper, we have investigated the pyroelectric characteristics of the $20\mu\textrm{m}-thick$ $LiTaO_3$ single crystal with black coating by using the nondestructive dynamic method. The $LiTaO_3shows$ the maximum pyroelectric coefficient (${\gamma}$) of $1.56$\times$10-8C/\textrm{cm}^2K$ at 40Hz and the responsivity (Rv) is 488V/W at 2Hz. The noise equivalent power (NEP) is obtained as 3.95$\times$10-10W/√Hz at 40Hz. The detectivity (D*) is obtained divided by the sample area and estimated to be 5.6$\times$108cm√Hz/W at 40Hz. These results, shows that the $LiTaO_3$ single crystals are the best candidates to pyroelectric IR sensors.