• Title/Summary/Keyword: purity test

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A Study on Leaching Characteristics of $Cr^{6+}$ in Cement Grout Materials (시멘트 그라우트재에서 $Cr^{6+}$용출특성에 관한 연구)

  • 김동우;이재영;천병식
    • Journal of Soil and Groundwater Environment
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    • v.8 no.2
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    • pp.62-69
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    • 2003
  • The aim of research is the evaluation of the $Cr^{6+}$ emission features of the liquid injection through emission experiments in varying conditions, based on a field-mixing ratio. The results showed that the content of $Cr^{6+}$ content in cement measured had an Ordinary Potland Cement (OPC) of 25.3 mg/kg, which constitute the largest portion among the other materials. Likewise, the emission experiment of homo-gel and sand-gel generally satisfied the standard of KSLT (Korea Standard Leaching Test) in waste of 1.5 mg/L, but in case of the standard of KSLT in soil the emission of OPC $Cr^{6+}$ of 4.85 mg/kg. These conditions is a little exceeded the criteria in the ‘Ga’ area in terms of Korea Soil Environmental Preservation Law. In addition, results generated by the mock-up injection facilities revealed that $Cr^{6+}$ emission increased as Water/Cement and injection pressure increased. At injection pressure higher than 4 kg/㎤, $Cr^{6+}$ emission exceeded the water preservation standard of 0.5 mg/L. Similarly, a pattern experiment of C $r^{6+}$ emission according to pH was conducted, in order to evaluate the $Cr^{6+}$ emission features of grout materials in leachate below pH 5 such as pH 4 acid rain or landfill. Results show that $Cr^{6+}$ emission dramatically increased in high acidic or basic state. It indicates that $Cr^{6+}$ emission will probably increase in an environment where grout materials are injected. On the other hand, concentration of leachate was determined in areas where grout materials are used. The results show that the concentration of emission in an ultra purity condition does not manifest intensity, and is affected in the OPC>MC>SC order. It means that the pollutants or $Cr^{6+}$ emission increases with decreasing concentration. As such, $Cr^{6+}$ emission will probably exceed the countermeasure criteria according to the types of gout materials. Similarly, high pressure or injection will cause increased $Cr^{6+}$ emission. Therefore, the selection of materials or mixing ratio should be considered in general as well as according to specific industries, based on the strength and pH of $Cr^{6+}$ emission.

PREPARATION OF AMORPHOUS CARBON NITRIDE FILMS AND DLC FILMS BY SHIELDED ARC ION PLATING AND THEIR TRIBOLOGICAL PROPERTIES

  • Takai, Osamu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2000.11a
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    • pp.3-4
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    • 2000
  • Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

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