• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.197-200
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• 2000

All-optical NOR logic device was realized by use of two pump signals with a single wavelength and a semiconductor optical amplifier(SOA). Specially, Mach-Zehnder(MZ) modulator was used for an external modulation of the pump signals. To obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier(EDFA) at the input of the SOA. Pump and probe signals are obtained from a DFB laser diode(${\lambda}_p$=1554 nm) and a tunable laser diode(${\lambda}_s$=1535 nm), respectively. The operation characteristics of the NOR logic device are successfully measured and demonstrated at the modulation frequency of 4.83 MHz.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2008년도 동계학술발표대회 논문집
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• pp.39-44
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• 2008

The heat exchange between the Borehole Heat Exchanger(BHE) and the surrounding ground depends directly on ground thermal conductivity k at the certain site. The k is thus a key parameter in designing BHE and coupled geothermal heat pump systems. Currently, although a thermal hydraulic response test(TRT) is mostly used in practice, the thermal hydraulic TRT needs additional power and is generally time-consuming. A new, simple wireless P/T probe for a hi-speed k determination was introduced in this paper. This technique using a wireless P/T probe is less time-consuming and requires no external source of energy for measurement and predicts local thermal properties by measuring soil temperatures along the depth. Measured temperature data along the depth was analyzed. In order to verify the new technique for the determination of ground thermal conductivity, ground thermal conductivity k that calculated from the measured temperature data using a wireless P/T probe was compared with one obtained from conventional hydraulic TRT. When comparing the average k of two methods, the relative error was approximately 10%. As a result, the electronic TRT can replace the conventional hydraulic TRT method after carrying out the additional research on a lot of sites.

• Journal of Mechanical Science and Technology
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• 제18권10호
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• pp.1712-1721
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• 2004

A method of measuring the thermal diffusivity of semi-infinite solid material at room temperature using photothermal displacement is proposed. In previous works, within the constant thickness of material, the thermal diffusivity was determined by the magnitude and phase of deformation gradient as the relative position between the pump and probe beams. In this study, however, a complete theoretical treatment of the photothermal displacement technique has been performed for thermal diffusivity measurement in semi-infinite solid materials. The influence of parameters, such as, radius and modulation frequency of the pump beam and the thermal diffusivity, was studied. We propose a simple analysis method based on the zero -crossing position of real part of deformation gradient and the minimum position of phase as the relative position between two beams. It is independent of parameters such as power of pump beam, absorption coefficient, reflectivity, Poisson's ratio, and thermal expansion coefficient.

• Journal of Mechanical Science and Technology
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• 제17권12호
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• pp.2078-2086
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• 2003

As technology advances with development of new materials, it is important to measure the thermal diffusivity of material and to predict the heat transfer in the solid subject to thermal processes. The measurement of thermal properties can be done in a non-contact way using photothermal displacement spectroscopy. In this work, the thermal diffusivity was measured by analyzing the magnitude and phase of deformation gradient. We proposed a new data analysis method based on the real part of deformation gradient as the pump-probe offset value. As the result, compared with the literature value, the measured thermal diffusivities of materials showed about 3 % error.

• Journal of Advanced Marine Engineering and Technology
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• 제28권6호
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• pp.922-930
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• 2004

An experimental investigation was performed to study on the generation of air bubble and air core with swirling flow in a horizontal cicular tube. To determine some characteristics of the flow, 2D PIV technique is employed for velocity measurement in water. The experimental rig is manufactured from an acryl tube. The test tube diameter of 80mm, and a length of 3000mm. The used algorithm is the gray leve cross-correlation method(Kimura et al. 1986). An Ar-ion laser is used and the light from the laser(500mW) passes through a probe to make two-dimensional light sheet. In order to make coded images of the tracer particles on one frame, an AOM(Acoustic-Optical Modulator) is used. The maximum axial velocities showed near the test tube wall at y/D =0.1 and y/D =0.9 along the test tube. The higher Reynolds number increase, the lower axial velocities are showed in the center of the test tube. The air bubbles are generated from Re =10,000 and developed into air core from the recirculating water pump rpm equal 30Hz. The pressure and temperature are measured across the test tube at X/D=3.33.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.139.2-139.2
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• 2016

Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.

• 한국전자파학회논문지
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• 제22권10호
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• pp.927-933
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• 2011

본 논문에서는 전자 소자 기반의 상용 오실로스코프에 의한 기존의 펄스 신호 측정 방법의 주파수 한계를 극복하기 위하여 전기광학 기반의 측정 방법을 기술하였다. 펄스폭 0.1 ps의 펨토초 레이저와 광다이오드를 사용하여 20 GHz 주파수 범위에 대응되는 전자기 펄스를 발생시키고, 마이크로스트립 선로를 통해 전송되는 전자기 펄스를 검출하기 위하여 전기광학 샘플링 기법을 이용하였다. 마이크로스트립 선로 위의 매우 근접한 거리에서 광학 결정 프로브를 이용하여 비접촉식으로 펄스 신호를 검출하고, 선로의 출력단 펄스 신호를 기존의 오실로스코프로 측정하여 두 측정 결과를 서로 비교하였다.

• 한국진공학회지
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• 제12권2호
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• pp.144-149
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• 2003

주사전자현미경을 이용한 전자빔의 직접조사에 의해 실리콘 캔틸레버 위에 탄소상 탐침을 성장하였다. 오일확산 펌프의 잔류가스 분위기에서 실리콘 캔틸레버와 전자빔을 수직으로 정렬한 다음 전자현미경의 스폿 모드를 통해 전자빔을 일정시간 동안 조사시켜 탄소상 탐침을 성장시켰다. 주사전자현미경의 제어변수인 조사시간, 가속전압, 방출 전류, 전자빔 프로브 전류 등을 변화시킴으로써 다양한 종횡비를 가지는 탐침을 성장시킬 수 있었으며, 성장 위치의 표면 형상과 무관하게 탐침을 성장시킬 수 있었다. 그 결과 유효길이 0.5 $\mu\textrm{m}$, 바닥직경 90 nm,콘의 반각 $3.5^{\circ}$인 탐침을 성장시켰다. 탐침이 없는 캔틸레버에 고종횡비 탄소상 탐침을 성장시킬 수 있는 기술은 PZT 박막구동기가 집적화된 AFM 캔틸레버의 탐침 형성 과정에서 발생하는 제작과정의 번거로움을 극복하는데 적용될 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.243-243
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• 2010

Low-temperature grown (LTG) InGaAs epilayers were grown by MBE technique for studying a correlation between terahertz (THz) emission and the intrinsic defects. The 1.2-um-thick Be-compensated LTG-InGaAs epilayers were prepared on SI-InP:Fe substrate at $200-250^{\circ}C$, and subsequently in-situ annealed under As environment at $550^{\circ}C$ for 5-30 minutes. The carrier concentration/mobility and the crystalline structure were analyzed by the Hall effect and the x-ray diffraction (XRD), respectively, and the carrier lifetime were determined by the fs time-resolved pump-probe spectroscopy. THz generation from LTG-InGaAs was carried out by a Ti-sapphire laser (800 nm) of a pulse width of 190 fs at a repetition of 76 MHz. Figure shows the spectral amplitude of generated waves in the THz region. As the growth temperature of epilayer increases, the amplitude is enhanced. However, two samples grown at $200^{\circ}C$, as-grown and annealed, show almost no difference in the spectral amplitude. This suggests that the growth temperature is critical in the formation of defect states involved in THz emission. We are now investigating the correlations between the XRD band attributed to defects, the Hall parameter, and the spectral amplitude of generated THz wave.