• Title/Summary/Keyword: pulsed-laser deposition

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Investigation on field emission properties of diamond-like carbon thin film by variation of laser processing parameters (레이저 공정변수 변화에 따른 다이아몬드상 카본박막의 전계방출 특성분석)

  • Shim, Kyung-Suk;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1511-1513
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    • 1999
  • In order to investigate the properties of diamond-like carbon(DLC) thin films depending on the deposition parameters, DLC thin films were systematically fabricated by pulsed laser deposition (PLD), DLC thin films have been shown advantageous field emission properties due to a negative electron affinity (NEA) and a low work function. At the atomic level. DLC is referred to the group of carbon materials with strong chemical bonding composition of $sp^2$ and $sp^3$ arrangements of atoms incorporated with an amorphous structure. The experiment was performed at substrate temperature in the range of room temperature to $600^{\circ}C$. The laser energy densiy was used to be in the range of $6J/cm^2$ to $20J/cm^2$, SEM, Raman, PL, XPS and field emission characteristics were used to investigate the DLC thin films.

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Study of Laser Ablated Y-Ba-Cu-O Thin Films on $LaAlO_3$(100)Substrates (Laser Ablation에 의하여 $LaAlO_3$(100) 기판 위에 증착된 Y-Ba-Cu-O 박막에 대한 연구)

  • 조윌렴;이규철;고도경;이헌주;노태원;김정구;허필화
    • Journal of the Korean Ceramic Society
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    • v.28 no.12
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    • pp.1005-1011
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    • 1991
  • Y-Ba-Cu-O thin films were in-situ fabricated on LaAlO3(100) substrates using the second harmonics of a pulsed Nd:YAG laser. Thin films were deposited under 200 (mtorr) of oxygen atmosphere, when the substrate temperature was changed between 67$0^{\circ}C$ and 82$0^{\circ}C$. After deposition, the films were in-situ annealed at 50$0^{\circ}C$ under 2/3 bar of oxygen pressure. We showed that the deposition temperature affects the formation of superconducting phase, the resistance, and the surface morphology. The Y-Ba-Cu-O thin films deposited at 76$0^{\circ}C$ show the zero resistance critical temperature of 85 K.

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Continuous and Pulsed Laser Induced Copper Deposition on Silicon(Si) from Liquid Electrolyte (전해질 용액내의 실리콘 단결정 표면에서 레이저로 유기되는 구리 침착)

  • 유지영;안창남;이상수
    • Korean Journal of Optics and Photonics
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    • v.3 no.1
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    • pp.50-54
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    • 1992
  • Maskless depositon of copper onto n-doped and p-doped Si in an aqueous copper sulfate solution is investigated. On p-doped Si substrates, microscopic $(~10\mu\textrm{m}$) copper spots are deposited by illuminating continuous wave $Ar^+$ laser beam of wavelength 514.5 nm. Copper deposition on n-doped Si substrates is also achieved by shinning second harmonic pulses $(pulse width~25 nsec, \lambda=530 nm)$ of a passively Q-switched Nd:YAG laser. The observed deposition is attributed to the electric field resulting from the Galvanic potential of a semiconductor-electrolyte junction.

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Study on the Composition and Crystallization of TiNi Thin Films Fabricated by Pulsed Laser Deposition in Ambient Ar Gas (Ar가스 분위기에서 PLD방법으로 제작된 TiNi박막의 조성 및 결정성에 관한 연구)

  • Cha, J.O.;Shin, C.H.;Yeo, S.J.;Ahn, J.S.;Nam, T.H.
    • Journal of the Korean Vacuum Society
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    • v.16 no.2
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    • pp.116-121
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    • 2007
  • TiNi shape memory alloy(SMA) was fabricated by PLD(plused laser deposition) using equiatomic TiNi target. Composition and crystallization of TiNi thin films which were fabricated in ambient Ar gas(200m Torr)and vacuum($5{\times}10^{-6}\;Torr$) were investigated. Composition of TiNi thin films was characterized by energy-dispersive X-ray spectrometry (EDXS) and crystallization was confirmed by X-ray diffraction (XRD). The composition of films depends on the distance between target and substrate but does not sensitively depend on the substrate temperature. It is found that the composition of films can be easily controlled when substrate is placed inside plume in ambient Ar gas. It is also found that the in situ crystallization temperature ($ca.\;400^{\circ}C$) in ambient Ar gas is lowered in comparison with that of TiNi film prepared under vacuum. The low crystallization temperature in ambient Ar gas makes it possible to prepare the crystalline TiNi thin film without contamination.

Real Time Monitoring of Ionic Species Generated from Laser-Ablated Pb$(Zr_{0.52}Ti_{0.48})O_3$ Target Using Pulsed-Field Time-Of-Flight Mass spectrometer

  • 최영구;임훙선;정광우
    • Bulletin of the Korean Chemical Society
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    • v.19 no.8
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    • pp.830-835
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    • 1998
  • The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.

Field-emission Properties and Long-term Stability of Tip-type Carbon Nanotubes Coated with Gallium-incorporated Zinc Oxide Films (갈륨이 첨가된 산화아연막의 코팅에 따른 미세팁 구조 탄소나노튜브의 전계방출 특성 및 장시간 안정성)

  • Kim, Jong-Pil;Noh, Young-Rok;Jo, Kyoung-Chul;Lee, Sang-Yeol;Park, Jin-Seok
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.4
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    • pp.65-69
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    • 2009
  • Carbon nanotubes (CNTs) were coated with undoped zinc oxide (ZnO) or 5 wt% gallium-incorporated ZnO (GZO) using various deposition conditions. The CNTs were directly grown on conical-type tungsten substrates at $700^{\circ}C$ using inductively coupled plasma-chemical vapor deposition. The pulsed laser deposition technique was used to deposit the ZnO and GZO thin films with very low stress. Field-emission scanning electron microscopy and high-resolution transmission electron microscopy were used to monitor the variations in the morphology and microstructure of CNTs prior to and after ZnO or GZO coating. The formation of ZnO and GZO films on CNTs was confirmed using energy-dispersive x-ray spectroscopy. In comparison to the as-grown (uncoated) CNT emitter, the CNT emitter that was coated with a thin (10 nm) GZO film showed remarkably improved field emission characteristics, such as the emission current of $325\;{\mu}A$ at 1 kV and the threshold field of $1.96\;V/{\mu}m$ at $0.1\;{\mu}A$, and it also exhibited the highly stable operation of emission current up to 40 h.

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