• Title/Summary/Keyword: pulsed-laser deposition

Search Result 640, Processing Time 0.036 seconds

Annealing Effects of Laser Ablated PZT Films

  • Rhie, Dong-Hee;Jung, Jin-Hwee;Cho, Bong-Hee;Ryutaro Maeda
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.07a
    • /
    • pp.528-531
    • /
    • 2000
  • Deposition of PZT with UV laser ablatio was applied for realization of thin film sensors and actuators. Deposition rate of more than 20nm/min was attained by pulsed KrF excimer laser deposition, which is fairly better than those obtained by the other methods. Perovskite phase was obtained at room temperature deposition with Fast Atom Beam(FAB) treatment and annealing. Smart MEMS(Micro electro-mechanical system) is now a suject of interest in the field of micro optical devices, micro pumps, AFM cantilever devices etc. It can be fabricated by deposition of PZT thin films and micromachining. PZT films of more than 1 micron thickness is difficult to obtain by conventional methods. This is the reason why we applied excimer laser ablation for thin film deposition. The remanent polarization Pr of 700nm PZT thin film was measured, and the relative dielectric constant was determined to about 900 and the dielectric loss tangent was also measured to be about 0.04. XRD analysis shows that, after annealing at 650 degrees C in 1 hour, the perovskite structure would be formed with some amount of pyrochlore phase, as is the case of the annealing at 750 degrees C in 1 hour.

  • PDF

Fabrication and Characterization of$(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ Thin Films by Pulsed Laser Deposition (펄스 레이저 증착법에 의한 $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ 박막의 제작 및 특성)

  • Shim, Kyung-Suk;Lee, Sang-Yeol
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.48 no.5
    • /
    • pp.303-308
    • /
    • 1999
  • Dielectric thin films of PLT(28) ($(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$) have been deposited on $Pt/Ti/SiO_2/Si$ substrates in situ by a laser ablation. We have systematically changed the laser fluence from 0.4 J/$cm^2$ to 3 J/$cm^2$, and deposition temperature from $450^{\circ}C\; to\; 700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. The deposition temperature influenced on nucleation energy much stronger than the laser energy density did.

  • PDF

레이저 어블레이션에 의한 강유전체 박막의 제작 및 응용 - 전기재료 기술

  • 박창엽;이상렬
    • 전기의세계
    • /
    • v.46 no.4
    • /
    • pp.28-33
    • /
    • 1997
  • 본고에서는 현재까지 연구되어온 강유전 박막 물질과 이들의 응용분야들을 개관하고, 또한 비교적 최근에 강유전체 박막 형성에 적용된 pulsed laser deposition(PLD)법을 소개하고, 이를 이용한 강유전체 박막의 제작 및 응용에 대한 연구 동향을 고찰하고자 한다.

  • PDF