• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.8
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• pp.391-399
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• 1999

We have designed the backward wave oscillator, a power-pulsed generator oscillated at 20 GHz has higher frequency than current one. An absolute instability linear analysis was used for the purpose of designing the slow wave structure. A large diameter (D/$\lambda$=4.8) of the slow wave structure was adopted to prevent the breakdown brought about by the increase of power density. We have fabricated a marx generator, pulse forming line and diode. And the development of a compact pulsed power generator with short period and low amplitude is expected.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.230-231
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• 2012

This paper describes a gate driver that operates numerous semiconductor switch in the solide-state pulsed power modulator. the proposed gate driver is designed to receive both the isolated drive-power and the on/off pulse signals through the transformer. Moreover, the IGBT-switch can be quickly turned off by adding protection circuit. Therefore it protects the IGBT-switch from the arc condition that frequently occurs in high-voltage pulse application. To comprehend operating characteristic of each IGBT-switch in pulse output condition, the device consisting of a high efficiency soft-switching capacitor charger and two series stacking IGBT-switch is developed. Finally, the relability of the proposed gate driver and the device for its test are proved through PSpice simulation and experiments.

• Journal of the Korean institute of surface engineering
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• v.45 no.4
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• pp.168-173
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• 2012

A real-time monitoring of an immersed antenna type inductively coupled plasma (ICP) was done with optical emission spectroscopy (OES) to check the reports that sputtered atom density is decreasing as the ICP power is increased. At 10 mTorr pressure of Ar, Mg was sputtered by a bipolar pulsed power supply into 2 MHz ICP which has an insulator covered 2.5 turn antenna. Emitted light was collected in two different positions: above the target and inside the ICP region. With 100 W of Mg sputtering power, the intensities of Mg I (285.06 nm), Mg II (279.48 nm), Ar I (420.1 nm) were increased constantly with ICP power from 100 W to 600 W. At 500 W, the intensity of $Mg^+$ exceeded that of Mg under PID controlled discharge voltage of 180 V. The ratio of Mg II/Mg I was increased from 0.45 to 2.71 approximately 6 times.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.322-332
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• 2022

Energy storage capacitors based on dielectric ceramics with superior polarization properties and dielectric constant can provide much higher output power density due to their very fast energy charging/discharging rates, which are particularly suitable for operating pulsed-power devices. For an outstanding energy storage performance of dielectric capacitor, a large recoverable energy density could be derived by introducing a slim polarization-electric field hysteresis loop into dielectric materials by various technical approaches. Many research teams have explored various dielectric capacitor technologies to demonstrate high output power density and ultrafast charging/discharging behavior. This article reviews the recent research progress in high-performance dielectric capacitors for pulsed-power electronic applications.

• Journal of the Korean Applied Science and Technology
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• v.29 no.1
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• pp.81-87
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• 2012

The biodiesel production characteristics in a pulsed-corona plasma reactor has been investigated through parametric tests. Transesterification of rapeseed oil together with camelina oil was done with the change of such variables as voltage of power, molar ratio, KOH catalyst and temperature. The energetic electrons emitted from pulsed-corona plasma has contributed to the enhancement of yield on rapeseed oil in short time (15 min). The higher yield on camelina oil was observed in 5 min. The optimal parameters were shown as the voltage of 23 kV, the molar ratio of 5/1, the content of KOH catalyst of 0.6 wt% and the temperature of $28^{\circ}C$ under the rotating rate of spark gap of 900 rpm.

• Laser Solutions
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• v.6 no.3
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• pp.37-45
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• 2003

Pulsed laser ablation is important in a variety of engineering applications involving precise removal of materials in laser micromachining and laser treatment of bio-materials. Particularly, detailed numerical simulation of complex laser ablation phenomena in air, taking the interaction between ablation plume and air into account, is required for many practical applications. In this paper, high-power pulsed laser ablation under atmospheric pressure is studied with emphasis on the vaporization model, especially recondensation ratio over the Knudsen layer. Furthermore, parametric studies are carried out to analyze the effect of laser fluence and background pressure on surface ablation and the dynamics of ablation plume. In the numerical calculation, the temperature, pressure, density, and vaporization flux on a solid substrate are obtained by a heat-transfer computation code based on the enthalpy method. The plume dynamics is calculated considering the effect of mass diffusion into the ambient air and plasma shielding. To verify the computation results, experiments for measuring the propagation of a laser induced shock wave are conducted as well.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.1
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• pp.47-54
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• 2004

A new high voltage DC power supply is proposed. The proposed power supply is constructed with several power converters connected in series. It is easy to obtain high DC voltage for the same structure of each power converter. The output DC power of the proposed power supply can be disconnected from the load within several hundred microseconds at the instant of a load short-circuit fault. The rising time of the output DC voltage is also as small as several hundred microseconds, and there is no overshoot of the voltage because all of the output filter capacitors keep undischarged state even in load short-circuit condition. Therefore, the proposed scheme is suitable for the protection of frequent output short-circuit and fast on/off switching of output DC voltage. The proposed power supply has improved features such as simple structure, high power factor, and reduced size and volume compared with the conventional schemes. The operating principle is described and the validity of the proposed scheme is proved through simulations and experiments.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2204-2206
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• 1999

Pulsed Nd:YAC laser is used widely for materials processing and instrumentation. It is very important to control the laser energy density in materials processing by a pulsed Nd:YAG laser. A pulse repetition rate and a pulse width are regarded as the most dominant factors to control the energy density of laser beam. In this study, the alternating charge-discharge system was designed to adjust a pulse repetition rate. This system is controlled by one chip microprocessor and allows to replace an expensive condenser for high frequency to a cheap condenser for low frequency. In addition. we have investigated the current pulse shape of flashlamp and the operating characteristics of a pulsed Nd:YAG laser. As a result, it is found that the laser output of the power supply using the alternating charge-discharge system is not less than that of typical power supply. As the pulse repetition rate rises from 30pps to 120pps by the step of 30pps at 1200V, it is found that the laser efficiency decreases but the laser output power increases about 6W at each step.

• Journal of Oral Medicine and Pain
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• v.20 no.2
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• pp.327-334
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• 1995

In order to observe the influence of pulsed Nd:YAG laser at its out-of-contact with dentin on tooth temperature, we have applied pulsed Nd:YAG laser to 2mm thick dentin sample at a point of contact and from a distance of 1mm, 2mm, 3mm and 4mm with an energy of 0.3W, 0.5W, 0.8W, 1.5W and 2.0W. They were exposed to periods of 3 seconds, 6 seconds, 9 seconds and 15 seconds respectively and measured temperature changes. The results as follows : 1. When the time ad intensity of power were constant, the temperature changes on dentin of tooth depended on the distance. The temperature increased when the laser intensity increased bu two other conditions were contact. 2. At the point of contact, the temperature has risen over $5^{\circ}C$ regrdless of intensity of the power or the time. However, there was $5^{\circ}C$ fluctuation with 0.3 W for 3 seconds treatment. 3. The temperature change was less than $5^{\circ}C$ thermal change at the distance of 1mm and 2mm respectively when lased for 3 seconds, 6 seconds, 12 seconds and 15 seconds with 0.3 W. Similar results were observed at 3 and 6 seconds treatment with 0.5 W and at 3 seconds treatment with 0.8 and 1.0W respectively. 4. It showed less than 5(C thermal change when lased for 3 seconds, 6 seconds, 9 seconds, 12 seconds and 15 seconds with 0.3W at the distance of 3mm and 4mm. The same results were seen in 3 seconds, 6 seconds and 9 seconds treatment with 0.5W and in 3 seconds with 0.8W and 1.0W respectively. As we have seen the above, the results has indicated that pulsed Nd:YAG lasing at its off contact on dentin of 2mm thickness will not cause irreversible changes if lasing intensity, lasing distance and lasing time are appropriate.

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1157-1162
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• 2013

We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 ${\mu}A/mm$ and that of the conventional device was 1116.7 ${\mu}A/mm$. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.