• Journal of Industrial Technology
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• v.26 no.B
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• pp.173-181
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• 2006

We analyzed systematically particle growth in the pulsed $SiH_4$ plasmas by a numerical method and investigated the effects of pulse modulations (pulse frequencies, duty ratios) on the particle growth. We considered effects of particle charging on the particle growth by coagulation during plasma-on. During plasma-on ($t_{on}$), the particle size distribution in plasma reactor becomes bimodal (small sized and large sized particles groups). During plasma-off ($t_{off}$), there is a single mode of large sized particles which is widely dispersed in the particle size distribution. During plasma on, the large sized particles grows more quickly by fast coagulation between small and large sized particles than during plasma-off. As the pulse frequency decreases, or as the duty ratio increases, $t_{on}$ increases and the large sized particles grow faster. On the basis of these results, the pulsed plasma process can be a good method to suppress efficiently the generation and growth of particles in $SiH_4$ PCVD process. This systematical analysis can be applied to design a pulsed plasma process for the preparation of high quality thin films.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.353-360
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• 1999

The global balance model is applied to investigate the transient behavior of the electron density and temperature in helicon plasmas. The power absorption calculated from the solutions of the Maxwell equations is used in solving the power balance equation. A balance model for the neutral gas is also considered to fins its density self-consistently. It is turned out that the numerical results reasonably explain consequences of the ion pumping effect including the occurrence of two distinct modes of pulsed helicon discharge which have been observed experimentally. The behavior of the discharge parameters are fond to be primarily dependent on the power absorption and the gas flow rate, but the pressure controls the electron density and temperature of the final steady state as well as the transient state even with the same flow rate. Finally, it is shown that the electron density virtually the linear relationship between the density and the magnetic field is retained for a higher pressure when the effect of the ion pumping is negligible.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.119.1-119.1
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• 2014

Toxic waste disposal: Many people think that when toxic waste is dumped into the ocean or into the air, it disappears. This belief is incorrect. Rather than disappearing, it accumulates over time and slowly destroys the environment. Ultimately, it leads to the destruction of human race. Plasma is environmentally friendly: Plasma is environmentally friendly because it is created and disappears. When plasma is formed on the earth, you need certain conditions such as accelerating electrons by an electrical discharge or a particle accelerator. When this is gone, plasma completely disappears, leaving no impact on the environment. Plasmas produce radicals: Even if plasma density is low at atmospheric pressure, many radicals (excited states of molecules) are created. These radicals are chemically very aggressive. So instead of using harmful chemicals, plasma can be utilized for less of an impact on the environment. Plasma can reach very high temperatures: Plasma is also useful because when you control the density, you can easily reach high temperatures up to $5000{\sim}6000^{\circ}C$ at atmosphere pressure. Because of this heat and the chemical aggressiveness of the plasma, there are many green applications for plasma technology. Pulsed power technology: Pulsed electric field for extraction, drying and killing bacteria. Treatment of biological tissue by pulsed electric fields: Extraction of substances from cells: Sterilisation, Medical applications, Growth stimulation, Food preparation. Each application has its specialities, especially with respect to pulse shape and electric field strength.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2163-2165
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• 2005

A pulsed laser ablation deposition (PLAD) technique has been used for producing fine particle as well as thin film at relatively low substrate temperatures. However, in order to manufacture and evaluate such materials in detail, motions of plume particles generated by laser ablation have to be understood and interactions between the particles by ablation and gas plasma have to be clarified. Therefore, this paper was focused on the understanding of plume motion in laser ablation assisted by Ar plasma at 50(mTorr). Two-dimensional hybrid model consisting of fluid and particle models was developed and three kinds of plume particles which are carbon atom (C), ion $(C^+)$ and electron were considered in the calculation of particle method It was obtained that ablated $C^+$ was electrically captured in Ar plasmas by strong electric field (E). The difference between motions of the ablated electrons and $C^+$ made E strong and the collisional processes active.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.30-30
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• 2011

The wave-cutoff tool is a new diagnostic method to measure electron density and electron temperature. Most of the plasma diagnostic tools have the disadvantage that their application to processing plasma where toxic and reactive gases are used gives rise to many problems such as contamination, perturbation, precision of measurement, and so on. We can minimize these problems by using the wave-cutoff method. Here, we will present the results obtained through the development of the wave-cutoff diagnostic method. The frequency spectrum characteristics of the wave-cutoff probe will be obtained experimentally and analyzed through the microwave field simulation by using the CST-MW studio simulator. The plasma parameters are measured with the wave-cutoff method in various discharge conditions and its results will be compared with the results of Langmuir probe. Another disadvantage is that other diagnostic methods spend a long time (~ a few seconds) to measure plasma parameters. In this presentation, a fast measurement method will be also introduced. The wave-cutoff probe system consists of two antennas and a network analyzer. The network analyzer provides the transmission spectrum and the reflection spectrum by frequency sweeping. The plasma parameters such as electron density and electron temperature are obtained through these spectra. The frequency sweeping time, the time resolution of the wave-cutoff method, is about 1 second. A short pulse with a broad band spectrum of a few GHz is used with an oscilloscope to acquire the spectra data in a short time. The data acquisition time can be reduced with this method. Here, the plasma parameter measurement methods, Langmuir probe, pulsed wave-cutoff method and frequency sweeping wave-cutoff method, are compared. The measurement results are well matched. The real time resolution is less than 1 ?sec. The pulsed wave-cutoff technique is found to be very useful in the transient plasmas such as pulsed plasma and tokamak edge plasma.

• Journal of the Optical Society of Korea
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• v.2 no.2
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• pp.50-53
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• 1998

We report on the spectroscopic investigation of optical-field ionized plasmas in the soft X-ray spectral region. The experiment was carried out by focusing pulses of the high-power Ti:Sapphire laser with an energy of ~ 40 mJ and time duration of ~30 fs into a gas jet of krypton, xenon, and argon from a pulsed nozzle. Strong soft X-ray emission on lines from ionic stages of $Kr^{7+} , Kr^{8+} , Xe^{7+} , Ar^{7+} , and Ar^{8+}$ is reported. The experimental result was found to be in good agreement with theoretical prediction.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1812-1814
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• 1998

Recently plasmas have been used to reduce the undesirable gases $SO_2$, NO, and $NO_2$. Especially bidirectional pulsed voltages were used to increase the efficiency of flue-gas reactors. The particle-Mesh model using NGP (Nearest-grid-point) and FEM (Finite Element Method) calculate the detailed space-time variations of the electric fields for the streamer and it makes the characteristics of reactor more clearly. In this simulation NO is considered a dominant gas.

• Journal of the Optical Society of Korea
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• v.7 no.3
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• pp.145-149
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• 2003

The anisotropy of electron energy distribution in oxygen plasmas produced by a high intensity laser was investigated by using polarization spectroscopy. An ultra-short pulsed laser with a pulse duration of 66.5 fs and a power density of $1 {\times} 10^17/ W/$\textrm{cm}^2$$ was used. At this power density and pulse duration, the plasma was generated predominantly by optical field ionization. The degree of polarization of OVI 1s$^2$2p$^2$p2- 1s$^2$4d$^2$D$^{0}$ (J = 1/2-3/2 and 3/2-5/2) transition line at 129.92 $\AA$ was measured. O VI 1s$^2$2p$^2$P$^2$ -1s$^2$4s$^2$S$^2$ (J = 1/2-1/2 and 3/2-1/2) transition line at 132.26 $\AA$ was used to calibrate the sensitivity of the optical system. The dependencies of the degree of polarization on the initial gas density and on the laser polarization were investigated. When the laser polarization was changed from a linear to a circular polarization, the degree of polarization was decreased. When the initial gas density was increased, the degree of polarization was decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.200-200
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• 2013

기존 메모리 반도체에 비교해 빠른 재생속도와 높은 집적도, 비휘발성 등의 특성을 가지는 MRAM (Magnetic Random Access Memory)은 DRAM, flash memory 등을 대체할 수 있는 차세대 기억 소자로서 CoFeB/MgO/CoFeB로 구성된 한 개의 MTJ (Magnetic Tunnel Junction)를 단위 메모리로 사용한다. 이 MTJ 물질들은 고밀도 플라즈마를 이용한 건식 식각공정시 Cl2, BCl3 등과 같은 chlorine 을 포함한 가스를 이용하여 왔으나 식각 후 sidewall에서 발생하는 부식과 식각 선택비 확보의 어려움 등으로 마스크 물질에 제약을 받고 소자 특성이 감소하게 되는 등의 문제가 있다. 따라서 이러한 식각 문제점을 해결하기 위한 대안으로 noncorrosive 가스인 CO/NH3, CH3OH, CH4 등을 이용한 MTJ 식각 연구가 진행되어 오고 있으며 이중 CO/NH3 혼합가스는 부식성이 없고 hard mask와의 높은 선택비를 가지는 기체로 CO gas에 NH3 gas를 첨가하게 되면 etch rate이 증가하는 특성을 보인다. 또한 rf pulse-biased power를 이용하여 이온의 입사를 시간에 따라 제어함으로써 pulse off time 때 etch gas와 MTJ 물질간의 chemical reaction을 향상시킬 수 있다. 따라서 본 연구에서는 CO/NH3 혼합가스를 이용하여 다양한 rf pulse-biased power 조건에서 MTJ 물질인 CoFeB, MgO와 hard mask 물질인 W을 식각 한 뒤 식각특성을 분석하였으며 MTJ surface의 chemical binding state, surface roughness 측정을 진행하였다. 식각 샘플의 측정은 Alpha step profiler, XPS (X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy)를 통해 진행되었다. Time-averaged pulse bias에서는 duty ratio가 감소할수록 etch rate의 큰 감소 없이 CoFeB/W, MgO/W 물질의 etch selectivity가 향상됨을 확인할 수 있었으며 pulse off time 구간에서의 chemical reaction 향상으로 인해 식각부산물의 재증착이 감소하고 CoFeB의 surface roughness가 감소하는 것을 확인하였다.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.79-84
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• 2010

Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.