• Korean Chemical Engineering Research
• /
• v.48 no.4
• /
• pp.511-514
• /
• 2010

Perfluorinated polymer($Cytop^{TM}$) was deposited on selective area of AlGaN/GaN HEMT structure using low cost and simple spin-coating method, and the electrical characteristics of the device was analyzed for application of passivation layer on semiconductors. Gate lag measurement results of $Cytop^{TM}$ passivated and unpassivated HEMT were compared. Passivated device shows improved 65 % pulsed drain current of dc mode value. Rf measurements were also performed. $Cytop^{TM}$ passivated HEMT have similar rf performance to PECVD grown $Si_3N_4$ passivated device. $Cytop^{TM}$ passivation layer may play an important role in mitigating surface state trapping in the region between gate and drain.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.8 no.5
• /
• pp.389-396
• /
• 2003

This paper describes a novel ac/dc power converter suitable for frequent output short-circuit faults. The output dc power of the proposed converter can be disconnected from the load within several hundred microseconds at the instant of short-circuit fault. The rising time of the dc load voltage is as small as several hundred microseconds, and there Is no overshoot of the dc voltage because the dc output fillet capacitors stay at a undischarged state. The proposed converter has the characteristics of a simplified structure, reduced cost, weight, and volume compared to the conventional power supplies for frequent output short-circuit. Analysis, simulations, and experiments are carried out to investigate the operation and usefulness of the proposed scheme.

• Korean Journal of Materials Research
• /
• v.11 no.9
• /
• pp.802-809
• /
• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• Proceedings of the KIPE Conference
• /
• 2019.11a
• /
• pp.46-48
• /
• 2019

본 논문은 Discontinuous Conduction Mode(DCM) 플라이백 컨버터로 생성한 고전압 펄스를 스파크 갭으로 펄스 상승 시간을 줄이는 방법에 관하여 다룬다. 이러한 방법으로 생성된 빠른 상승률 특성을 가지는 고전압 펄스 전원장치는 친환경 가스 처리 분야에 사용할 수 있다. 기존 스태킹 구조의 펄스 전원 장치는 많은 수의 스위치들과 에너지 저장 소자가 필요하므로 부피가 커지고 제조 단가가 증가하는 반면, 분 논문에 제안된 전원 장치는 구조를 단순화하여 전체 시스템의 소형화 및 제조 단가를 낮춘 점을 특징으로 한다. 제안된 설계 토폴로지는 플라이백 변압기 2차 측에 다이오드의 사용 유무에 따라 두 개의 변형된 회로로 응용 가능 하다. 변압기 2차측에 다이오드를 사용하면, 음의 성분 없이 깨끗한 고전압 출력 펄스를 만들 수 있지만 사용한 다이오드의 전압 정격을 고려해야 한다. 다이오드를 사용하지 않는다면, 고전압 출력 펄스에 음의 성분이 발생하지만 비용과 부피를 최대한 줄일 수 있다. PSIM 시뮬레이션을 사용하여 제안하는 전원 장치의 23kV, 0.5 ㎲, 10 ns rising time의 출력 펄스 발생 성능을 검증하고, 다이오드 사용에 따른 출력 펄스의 차이점을 비교하였다.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.34-35
• /
• 2006

Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, $HfO_2$ as a gate insulator. GZO and $HfO_2$ layers are prepared by using a pulsed laser deposition and intrinsic ZnO layers are fabricated by using an rf-magnetron sputtering, respectively. The transparent TFT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as $11.7\;cm^2/Vs$ and a drain current on-to-off ratio of about $10^5$.

• Proceedings of the KIEE Conference
• /
• 1996.11a
• /
• pp.285-288
• /
• 1996

The electronic operation of the gas discharge tube is controlled by the electrical energy as sinusoidal waveform in arbitrary frequency range, or as a sequence of pulses at a wide range of duty cycle, the gas composition, the kind of electrode and the vessel geometry. In this paper, the pulsed mode operated gas discharge tube is composed with mixed gas of IIg-Ne ( 10 Torr ), in the tube of 15.0 mm outer diameter and has variable color from red to blue with changing frequency and pulse width in high voltage. As increasing pulse width and frequency in the gas discharge tube, the phenomenons that the electron temperature in the positive column increases and the radiation from atoms of higher upper state energy levels increases, exist. The color have the locus from red (0.4972, 0.3128) to blue (0.2736, 0.2619) in CIE chromacity diagram with increasing pulse width and frequency. The changing method of pulse width and frequency has been shown to be suitable for the luminous color control.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.63 no.1
• /
• pp.80-84
• /
• 2014

The discharge characteristics of Surface Dielectric Barrier Discharge (SDBD) reactor are investigated to find optimal driving condition with adjusting various parameter. When the high voltage with sine wave form is applied to SDBD source, successive pulsed current waveforms are observed owing to multiple ignitions through the long discharge channel and wall charge accumulation on the dielectric surface. The discharge voltage, total charge between dielectrics, mean energy and power are calculated from measured current and voltage according to electrode gap and dielectric thickness. Discharge mode transition from filamentary to diffusive glow is observed for narrow gap and high applied voltage case. However, when the diffusive discharge is occurred with high applied voltage, the actual firing voltage is always lower than that with low driving voltage. The $Si_3N_4$, $MgF_2$, $Al_2O_3$ and $TiO_2$ are considered for dielectric protection and high secondary electron emission coefficient. SDBD with $MgF_2$ shows the lowest breakdown voltage. $MgF_2$ thin film is proposed as a protection layer for low voltage atmospheric dielectric barrier discharge devices.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.30 no.1
• /
• pp.1-7
• /
• 2016

With a collimated $CO_2$ laser beam, the bidirectional current switching was realized in a two-terminal electronic device based on a highly resistive vanadium dioxide($VO_2$) thin film. A $VO_2$ thin film was grown on a $Al_2O_3$ substrate by a pulsed laser deposition method. For the fabrication of a two-terminal electronic device, the $VO_2$ thin film was etched by an ion beam-assisted milling method, and the $VO_2$ device, of which $VO_2$ patch width and electrode separation were 50 and $100{\mu}m$, respectively, was fabricated through a photolithographic method. A bias voltage range for stable bidirectional current switching was found by using the current-voltage property of the device measured in a current-controlled mode. The transient responses of bidirectionally switched currents were analyzed when the laser was modulated at a variety of pulse widths and repetition rates. A switching contrast was measured as ~3333, and rising and falling times were measured as ~39 and ~21ms, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.29 no.11
• /
• pp.28-34
• /
• 2015

By incorporating a 966nm near infrared laser, we demonstrated bidirectional current triggering of between 0 and 10mA in a two-terminal planar device based on a highly resistive vanadium dioxide ($VO_2$) thin film grown by a pulsed laser deposition method. A two-terminal planar device, which had an electrode separation of $100{\mu}m$ and a $50{\mu}m-wide$ $VO_2$ conducting layer, was fabricated through ion beam-assisted milling and photolithographic techniques. A bias voltage range for stable bidirectional current triggering was determined by investigating the current-voltage curves of the $VO_2-based$ device in a current-controlled mode. Bidirectional current triggering of up to 10mA was realized by directly illuminating the $VO_2$ film with a focused infrared laser beam, and the transient responses of triggered currents were analyzed when the laser was modulated at various pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as ~3571, and the rising and falling times were measured as ~40 and ~20ms, respectively.

• Journal of the Optical Society of Korea
• /
• v.17 no.4
• /
• pp.323-327
• /
• 2013

A laser ultrasonic inspection system has the advantage of nondestructive testing. It is a non-contact mode using a laser interferometer to measure the vertical displacement of the surface of a material caused by the propagation of ultrasonic signals with the remote ultrasonic generated by laser. After raising the ultrasonic signal with a broadband frequency range using a pulsed laser beam, the laser beam is focused to a small point to measure the ultrasonic signal because it provides an excellent measurement resolution. In this paper, foreign materials are measured by a non-destructive and non-contact method using the laser ultrasonic inspection system. Mixed foreign material on the corroded part is assumed and the laser ultrasonic experiment is conducted. An ultrasonic wave is generated by pulse laser from the back of the specimen and an ultrasonic signal is acquired from the same location of the front side using continuous wave laser and Confocal Fabry-Perot Interferometer (CFPI). The characteristic of the ultrasonic signal of existing foreign material is analyzed and the location and size of foreign material is measured.