• 제목/요약/키워드: pulsed direct current

검색결과 27건 처리시간 0.027초

우울증에서 비침습적 두뇌 자극 치료 : 경두개 자기자극과 경두개 직류자극 (Therapeutic Application of Transcranial Magnetic Stimulation and Transcranial Direct Current Stimulation in Depression)

  • 채정호
    • 신경정신의학
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    • 제57권2호
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    • pp.119-132
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    • 2018
  • Despite the fact that pharmacotherapy depressive disorders have proven efficacy, a substantial number of patients are resistant to conventional management. As neuroscientific research about pathophysiology of depression have accumulated, repeated transcranial magnetic stimulation (rTMS) and transcranial direct current stimulation (tDCS) have emerged as an important mechanism-based treatment modality. This overview provides a review of therapeutic application of rTMS and tDCS in patients with depression. The clinical and basic studies of rTMS and tDCS in depression were reviewed and integrated using a literature review and interview with experts. rTMS is a noninvasive procedure of a localized pulsed magnetic field to the surface of the head to cause a depolarization of neurons in the brain cortex. tDCS has a mechanism of modulating cortical excitability in a polarity-specific manner without eliciting action potentials. rTMS and tDCS seem promising for treating depression. Although therapeutic parameters and further technical improvement remain to be systematically investigated, rTMS and tDCS would be a safe and effective intervention to treat depression.

펄스형 Nd:YAG 레이저와 단락이행모드의 직류 GMA 열원을 이용한 하이브리드 용접 공정에 대한 연구 (A Study on the Process of Hybrid Welding Using Pulsed Nd:YAG Laser and Dip-transfer DC GMA Heat Sources)

  • 조원익;나석주
    • Journal of Welding and Joining
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    • 제25권6호
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    • pp.71-77
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    • 2007
  • Until now, many researches on laser-arc hybrid welding processes have been conducted mainly for high power CW laser and high direct current arc to weld the thick steel plates for shipbuilding. Recently, however the usage of thin steel plates, which tend to be deformed easily by thermal energy, is been increasing because of demand of light structure such as car body in the automobile industry. Accordingly, heat sources having relatively low heat input such as pulsed laser, dip-transfer DC GMA and pulsed GMA seem to be applied more increasingly and the study about those heat sources is needed more intensively. Any heat source mentioned above can not stand alone without weld defects at a relatively high welding speed for increasing the welding productivity. This is main reason to apply the hybrid welding process which uses pulsed laser and low-heat-input GMA heat sources simultaneously to weld the thin steel plate. In this study, parameters of pulsed laser and dip-transfer DC GMA welding are studied firstly through preliminary experiments, and then analyzed in the viewpoint of their physical phenomena. Before conducting the hybrid welding, a pulse control technique is developed based on the parallel port communication and Visual C++ 6.0. Owing to development of this technique, interactions of laser and arc pulses can be controlled consistently. Using the pulse control technique, the hybrid welding is conducted and then its interactive welding phenomenon is analyzed.

Boron 확산공정을 이용한 5,000V, 4인치 광 사이리스터의 제작 및 특성 평가 (Fabrication of 5,000V, 4-Inch Light Triggered Thyristor using Boron Diffusion Process and its Characterization)

  • 박건식;조두형;원종일;이병하;배영석;구인수
    • 전력전자학회논문지
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    • 제24권6호
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    • pp.411-418
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    • 2019
  • Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (VDRM) of 6,500 V. They drove an average on-state current (ITAVM) of 2,270 A, peak nonrepetitive surge current (ITSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I2T) of 17 MA2s without damage to the device.

Thrust Characteristics of a Laser-Assisted Pulsed Plasma Thruster

  • Masatoshi Kawakami;Hideyuki Horisawa;Kim, Itsuro ura
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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    • pp.294-299
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    • 2004
  • An assessment of a novel laser-electric hybrid propulsion system was conducted, in which a laser-induced plasma was induced through laser beam irradiation onto a solid target and accelerated by electrical means instead of direct acceleration only by using a laser beam. A fundamental study of newly developed rectangular laser-assisted pulsed-plasma thruster (PPT) was conducted. On discharge characteristics and thrust performances with increased peak current compared to our previous study to increase effects of electromagnetic forces on plasma acceleration. Maximum peak current increased for our early study by increasing electromagnetic effects in a laser assisted PPT. At 8.65 J discharge energy, the maximum current reached about 8000 A. Plasma behaviors emitted from a thruster in various cases were observed with an ICCD camera. It was shown that the plasma behaviors were almost identical between low and high voltage cases in initial several hundred nanoseconds, however, plasma emission with longer duration was observed in higher voltage cases. Canted current sheet structures were also observed in the higher voltage cases using a larger capacitor. With a newly developed torsion-balance type thrust stand, thrust performances of laser assisted PPT could be estimated. The impulse bit and specific impulse linearly increased. On the other hand, coupling coefficient and the thrust efficiency did not increase linearly. The coupling coefficient decreased with energy showing maximum value (20.8 ?Nsec/J) at 0 J, or in a pure laser ablation cases. Thrust efficiency first decreased with energy from 0 to 1.4 J and then increased linearly with energy from 1.4 J to 8.6 J. At 8.65 J operation, impulse bit of 38.1 ?Nsec, specific impulse of 3791 sec, thrust efficiency of 8 %, and coupling coefficient of 4.3 ?Nsec/J were obtained.

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Effect of Welding Speed on the Microstructure and Mechanical Properties of Austenitic Stainless Steel Welds

  • Li, C.;Jeong, H.S.
    • International Journal of Korean Welding Society
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    • 제3권1호
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    • pp.23-28
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    • 2003
  • The effect of the welding speeds on the weld bead shape, microstructure, and mechanical properties in type 304 austenitic stainless steels was investigated by microscopic test, Erichsen test and tensile test. In this study welds were produced using autogeneous Direct Current Straight Polarity (DCSP) and pulsed current GTA welding. This study shows the ferrite content, ductility, tensile strength and elongation of high speed welds are decreased with increasing welding speed. The high speed welds exhibits satisfactory tensile strength, though the ductility is not good as that of the base metal.

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ZnO films grown on GaN/sapphire substrates by pulsed laser deposition

  • Suh, Joo-Young;Song, Hoo-Young;Shin, Myoung-Jun;Park, Young-Jin;Kim, Eun-Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.207-207
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    • 2010
  • Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

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Electrical properties of n-ZnO/p-Si heterojunction photovoltaic devices

  • Kang, Ji Hoon;Lee, Kyoung Su;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.306.1-306.1
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    • 2016
  • ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

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에폭시 연면거리에 따른 파괴전압 분석 (Analysis of Surface flashover Depending on Gap Distance in Epoxy Region)

  • 윤재훈;이승수;임기조;강성화
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.400-400
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    • 2009
  • In a wide variety of high-voltage applications surface flashover plays major role in the system's performance and yet has not been studied in great detail for atmospheric conditions with modem diagnostic tools. surface flashover for both direct current and pulsed voltages in considered. within the setup, parameters such as geometry, material characteristics of the applied voltage can be altered. This paper review surface flashover of insulator, primarily in atmosphere. It discusses theories and models relating to surface flashover and experimental results. surface flashover of insulators in atmosphere generally is initiated by the emission of electrons from the cathode triple junction point (the region where the electrode, insulator, air). the electrode material was copper, and a AC voltage was applied between the electrodes. these results were compared with the surface flashover characteristic of epoxy.

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진공에서 절연체의 연면거리에 따른 파괴전압 분석 (Analysis of Surface Flashover Depending on Insulator Gap Distance in Vacuum)

  • 윤재훈;임종남;임기조;강성화
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1471_1472
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    • 2009
  • In a wide variety of high-voltage applications surface flashover plays major role in the system's performance and yet has not been studied in great detail for vacuum conditions with modern diagnostic tools. surface flashover for both direct current and pulsed voltages in considered. within the setup, parameters such as geometry, material characteristics of the applied voltage can be altered. This paper review surface flashover of insulator, primarily in vacuum. It discusses theories and models relating to surface flashover and experimental results. surface flashover of insulators in vacuum generally is initiated by the emission of electrons from the cathode triple junction point (the region where the electrode, insulator, vacuum). the electrode material was copper, and a AC voltage was applied between the electrodes. these results were compared with the surface flashover characteristic of insulator at results, surface flashover influenced only insulator surface condition. and increasing vacuum pressure was risen breakdown voltage.

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광펄스 파라미터 가변 LD를 이용한 복합형 DPSSL 개발 (Development of a Hybrid DPSSL with a Pulse Parameter Variable LD Seed)

  • 노영철;신우진;유봉안;이영락;정창수
    • 한국정밀공학회지
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    • 제27권10호
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    • pp.7-13
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    • 2010
  • We report a hybrid DPSSL with a pulse parameter variable LD seed, all-fiberized polarization-maintained pulsed Yb-doped fiber preamplifier chains, and a bulk Nd:$YVO_4$ power amplifier. Pulse parameter of LD seed was controlled by direct current modulation. The hybrid DPSSL generates 1064 nm laser pulses with an average power of 40W, a pulse duration of 20-40ns, and a repetition rate of 100-500kHz.