• Journal of international Conference on Electrical Machines and Systems
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• 제2권3호
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• pp.321-329
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• 2013

A multilevel inverter employing a cascade transformer is proposed for a silent-discharge-tube ozone generating system. The proposed inverter consists of four full-bridge inverters and fourteen transformers which have a series-connected secondary. It can accurately control the amplitude of the output voltage; hereby, it improves a linear characteristic of the rate of ozone yielding. The power regulation characteristics and operational principle of the proposed system are explained from a practical point of view. High precision ozone generating performance of the proposed multilevel inverter is verified by computer-aided simulations and experiment results.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2003년도 학술대회논문집
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• pp.185-190
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• 2003

The most shortcoming of metalhalide lamps is what the instant restarting cannot be realized when the arc tube is in the hot condition. The discharge starting voltage of arc tube in the hot condition is much higher than in the cold condition. Therefore it takes about five minutes to restart the metalhalide lamps, that is to say, it is possible to start when the pressure and the temperature are decreased. But, if the lamp is restarted in the hot condition, we must supply the high voltage pulse with 20kV at the both sides of lamp. The proposed electronic ballast is consist of a electromagnetic interference (EMI) filter, a power factor correction (PFC) circuit, a flyback converter, a half-bridge inverter, and a high voltage igniter circuit. By this composition we can restart the lamp with the voltage 20kV, even if the lamp is in the hot condition.

• 한국항공우주학회지
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• 제47권8호
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• pp.599-606
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• 2019

펄스건 장치는 연소실 내, 다중 분사기 배열에 따른 연소 유동장으로의 횡단 압력파 전파/감쇠 메커니즘 규명을 목적으로 제작되었다. 제작된 펄스건은 성능시험을 통해 목표 연소압에서의 운용 가능 여부와 압력파 강도 제어 여부를 확인하였다. 기체질소를 사용하여 고압관에 가압을 하였으며 다이아프램에는 $100{\mu}m$ 두께의 OHP 필름을 사용하였다. 압력파의 속도와 강도를 확인하기 위해 압력 트랜스듀서를 이용하여 동압과 정압을 측정하였다. 제작된 펄스건은 공급압력에 따라 압력파의 강도 조절이 가능하며 횡방향성을 가지는 압력파를 생성할 수 있음을 성능시험을 통해 확인하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집B
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• pp.640-645
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• 2001

The present study is to investigate the characteristics of the impulse waves discharged from the exit of the convergent and divergent pipes. An experiment is carried out using a shock tube with an open end and is compared to the computation of the axisymmetric, compressible, unsteady Euler equations, which are solved by the second-order total variation diminishing(TVD) scheme. For the computational work, some initial compression waves are assumed inside the pipe so that those are identical to the experimental ones of the shock tube. The results show that the peak pressures of the impulse waves discharged from the exit of convergent and divergent pipes decrease with an increase in the wavelength of the initial compression wave. All of the impulse waves have a strong directivity toward the pipe axis, regardless of the exit type of the pipe employed. The impulse waves discharged from the divergent pipe are stronger than those from the straight pipe, while the impulse waves of the convergent pipe are weaker than those from the straight pipe. It is believed that the convergent pipe can playa role of a passive control to reduce the peak pressure of the impulse wave. The present computations represent the experimented impulse waves with a good accuracy.

• 대한화학회지
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• 제6권2호
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• pp.155-157
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• 1962

A tiny dust found at the balcony of the Institute indicated about 8,0000 counts per minute by T.G.C.-2 Geiger-Muller tube (1.8mg/$cm^2$ window-thickness) at the distance of 2cm from the window. The main fission fragments, as identified by the present analysis, are 12.5day Ba-140 and 33.1 day Ce-141. The gamma energies were determined using $2"{\times}2"$ NaI(Tl) scintillation detector connected to RCL-256 channel pulse heigt analyzer. The beta energies were evaluated by Feather plot.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.1024-1029
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• 1998

In this paper, the voltage-fed series compensated inductor type load-resonant high-frequency inverter is originally presented for driving a newly-developed silent discharge ozone generating tube. The effective power regulation scheme of this ozonizer is proposed, which is based on PDM (Pulse Density Modulation) related PWM strategy due to DSP implementation. The effectiveness of this inverter type ozonizer is proved in simulation and experiment.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2004년도 하계학술발표 논문집
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• pp.198-198
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• 2004

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• 대한기계학회논문집B
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• 제36권7호
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• pp.697-703
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• 2012

본 연구에서는 식도 재건 수실 시 유문 성형 여부와 위장 이식편을 이용한 식도 접합 경로에 따른 음식물 역류 현상에 대해 고찰하였다. 위장 이식편의 두 가지 접합 경로(전방, 후방)는 환자 10 명의 CT 영상으로부터 얻어졌으며, 식도관 모델은 RP 로 제작하였다. 식도관은 유문 성형 여부의 두 가지 유문 모델에 연결하였고, 다양한 압력과 펄스폭을 적용하여 역류되는 유체의 체적과 최대 역류 높이를 측정하였다. 그 결과, 역류 체적과 높이는 압력에 따라 증가하였으며, 유문 성형을 하면 전방 경로가 후방 경로보다 역류되는 체적과 높이 작게 나타났다. 역류량은 펄스폭이 증가하면 증가하나 최대 역류높이에 대한 영향은 유문 성형 여부에 따라 달라진다.

• 한국전자통신학회논문지
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• 제14권5호
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• pp.853-862
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• 2019

본 논문에서는 낮은 MTBF와 높은 정비비용이 소모되는 TWTA(: Travelling Wave Tube Amplifier) 방식의 탐색레이더 송신장치를 대체하기 위해서 4.5kW X-대역 SSPA(: Solid State Power Amplifier) 방식의 송신장치를 설계하였다. 송신장치는 평균송신출력 520W와 최대송신출력 4.0kW 이상의 성능을 목표로 설계되었다. 특히 점진적 성능저하 기능을 구현하여, 200W 전력증폭기조립체의 40%(13개 조립체 모듈)의 고장 수준까지는 기존의 TWTA 송신장치보다는 우수한 성능이 유지되도록 설계하였다. 설계된 송신장치에 대해서 X-대역 유효범위를 대상으로 실험한 결과, 최대송신출력 6.1kW, 불요파 69.16dBc, 상승시간 15.2ns, 하강시간 16.3ns 등의 성능값을 확인하였다. 아울러 고장인가를 통하여 점진적 성능저하 기능에 따른 출력전력의 변화를 실험을 통해 확인하였다.