• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.135-135
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• 2015

Tubes are of extreme importance in industries as for fluid channels or wave guides. Furthermore, some weapon systems such as cannons use the tubes as gun barrels. To increase the service life of such tubes, a protective coating must be applied to the tubes' inner surface. However, the coating methods applicable to the inner surface of the tubes are very limited due to the geometrical restriction. A small-diameter cylindrical magnetron sputtering gun can be used to deposit coating layers on the inner surface of the large-bore tubes. However, for small-bore tubes with the inner diameter of one inch (~25 mm), the magnetron sputtering method can hardly be accommodated due to the space limitation for permanent magnet assembly. In this study, a new approach to coat the inner surface of small-bore tubes with the inside diameter of one inch was developed. Instead of using permanent magnets for magnetron operation, an external electro-magnet assembly was adopted around the tube to confine the plasma and to sustain the discharge. The electro-magnet was operated in pulse mode to provide the strong axial magnetic field for the magnetron operation, which was synchronized with the negative high-voltage pulse applied to the water-cooled coaxial sputtering target installed inside the tube. By moving the electro-magnet assembly along the tube's axial direction, the inner surface of the tube could be uniformly coated. The inner-surface coating system in this study used the tube itself as the vacuum chamber. The SS-304 tube's inner diameter was 22 mm and the length was ~1 m. A water-cooled Cu tube (sputtering target) of the outer diameter of 12 mm was installed inside of the SS tube (substrate) at the axial position. The 50 mm-long electro-magnet assembly was fed by a current pulse of 250 A at the frequency and pulse width of 100 Hz and 100 usec, respectively. The calculated axial magnetic field strength at the center was ~0.6 Tesla. The central Cu tube was synchronously driven by a HiPIMS power supply at the same frequency of 100 Hz as the electro-magnet and the applied pulse voltage was -1200 V with a pulse width of 500 usec. At 150 mTorr of Ar pressure, the Cu deposition rate of ~10 nm/min could be obtained. In this talk, a new method to sputter coat the inner surface of small-bore tubes would be presented and discussed, which might have broad industrial and military application areas.

• ETRI Journal
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• v.27 no.4
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• pp.405-410
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• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.146.2-146.2
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• 2010

PEMFC를 구성하는 여러 부품 중 핵심부품은 MEA(Membrane Electrode Assembly)으로서 실제 연료전지 반응이 일어나며 연료전지의 성능을 결정하는 부품이다. 그러나 PEMFC의 특성 상 촉매로 귀금속인 Pt가 사용됨에 따라 경제성이 확보된 MEA의 성능을 얻기 위해선 현재 Pt 담지량을 0.3mg/$cm^2$ 이하로 크게 감소시키면서 Pt촉매의 고분산화와 미반응 사이트의 감소가 필요하다. 본 연구에서는 Pt 촉매의 미반응 사이트를 줄이고자 전기영동법에 의해 카본전극(carbon black + GDL) 상에 Pt 나노입자를 직접 석출시켜 Pt/C 촉매 전극을 제조 하였다. 본 실험에서는 가장 좋은 Pt 나노입자의 석출거동을 나타낸 30mA/$cm^2$, pH 2, duty cycle 25% 조건을 기준으로 하여 electro-deposition time을 통한 석출량 제어와 carbon paper의 wet proofing 정도에 따른 Pt의 석출거동을 조사하였으며, 종래의 방법으로 제조한 Pt/C 촉매전극의 전기화학적 특성과 비교 분석하였다. 전기영동 석출법에 사용된 Pt나노입자는 $H_2PtCl_6{\cdot}6H_2O$로부터 화학적 환원법으로 합성한 2~3nm 입경을 갖는 Pt콜로이드를 사용하였으며, magnetic stirring과 항온 ($20^{\circ}C$)을 유지하여 실험하였다. 전기영동 석출량 제어는 electro-deposition time을 5~25분까지 5분 간격으로 나누어 실험하였고 카본전극을 구성하는 carbon paper의 wet proofing 정도가 Pt 나노입자 석출거동에 미치는 영향을 조사하기 위하여 20, 40, 60%의 서로 다른 wet proofing 값을 갖는 carbon paper를 사용하여 Pt/C 촉매 전극을 제조하였다. 전기영동법으로 석출된 카본블랙 전극 상 Pt나노입자의 분산도와 담지량는 각각 FE-SEM과 TGA 장비를 사용하여 측정하였고, 제조된 Pt/C 촉매 전극의 전기화학적 촉매 특성은 cyclic voltammetry(CV)법으로 측정하였다.

• Korean Journal of Materials Research
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• v.23 no.10
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• pp.550-554
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• 2013

As continued scaling becomes increasingly difficult, 3D integration has emerged as a viable solution to achieve higher bandwidths and good power efficiency. 3D integration can be defined as a technology involving the stacking of multiple processed wafers containing integrated circuits on top of each other with vertical interconnects between the wafers. This type of 3D structure can improve performance levels, enable the integration of devices with incompatible process flows, and reduce form factors. Through silicon vias (TSVs), which directly connect stacked structures die-to-die, are an enabling technology for future 3D integrated systems. TSVs filled with copper using an electro-plating method are investigated in this study. DC and pulses are used as a current source for the electro-plating process as a means of via filling. A TiN barrier and Ru seed layers are deposited by plasma-enhanced atomic layer deposition (PEALD) with thicknesses of 10 and 30 nm, respectively. All samples electroplated by the DC current showed defects, even with additives. However, the samples electroplated by the pulse current showed defect-free super-filled via structures. The optimized condition for defect-free bottom-up super-filling was established by adjusting the additive concentrations in the basic plating solution of copper sulfate. The optimized concentrations of JGB and SPS were found to be 10 and 20 ppm, respectively.

• Journal of Electrochemical Science and Technology
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• v.7 no.3
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• pp.190-198
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• 2016

Application of fuel cell to produce renewable energy for commercial purpose is limited by the high cost of Pt based electrode materials. Development of inexpensive, high energetic electrode is the need of the hour to produce pollution free energy using bio-fuel through a fuel cell. Ni-Cu and Ni-CeO₂-Cu electrode materials, electro synthesized by pulse current have been developed. The surface morphology of the electrode materials is controlled by different deposition parameters in order to produce a high current from the electro-oxidation of the fuel, the ethanol. The developed materials are electrochemically characterized by Cyclic Voltammetry (CV), Chronoamperometry (CA) and Potentiodynamic polarization tests. The results confirm that the high current is due to their enhanced catalytic properties viz. high exchange current density (i₀), low polarization resistance (R_p) and low impedance. It is worthwhile to mention here that the addition of CeO₂ to Ni-Cu has outperformed Pt as far as the high electro catalytic properties are concerned; the exchange current density is about eight times higher than the same on Pt surface. The morphology of the electrode surface examined by SEM and FESEM exhibits that the grains are narrow and sub spherical with 3D surface, containing vacancies in between the elongated grains. The fact has enhanced more surface area for electro oxidation of the fuel, giving rise to an increase in current. Presence of Ni, CeO₂, and Cu is confirmed by the XRD and EDXS. Fuel cell fabricated with Ni-CeO₂-Cu material electrode is expected to produce clean electrical energy at cheaper rates than conventional one, using bio fuel the derived from biomass.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.227-228
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• 2014

마그네슘은 금속 재료중 화학적 활성이 높아 내식성 향상을 위해 표면처리 공정이 반드시 필요하다. 플라즈마 전해 산화를 통한 산화 피막 생성 후 좀더 높은 내식성 향상을 위해 전착 도장법을 사용할 수 있다. 본 논문에서는 전원 인가 방식에 따라 pulse 전원을 on/off 비율에 따른 피막 두께 변화를 측정 하였고 전착 도장을 시행 하여 cross cut test를 통한 부착성 시험을 진행해 on/off 비율 1:4 조건에 250V 전압을 인가 하였을 때 부착성이 가장 우수함을 확인 하였다. 또한 플라즈마 전해 산화 후 탕세 공정을 통해 전착 도장의 내열탕 시험 후 표면 blister의 개선 효과를 얻을 수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.171-172
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• 2015

$Ni-W-Si_3N_4$ alloy composite coatings were prepared by pulse electro-deposition method using nickel sulfate bath with different contents of tungsten source, $Na_2WO_4.2H_2O$, and dispersed $Si_3N_4$ nano-particles. The structure and micro-structure of coatings was separately analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Results indicated that nano $Si_3N_4$ and W content in alloy had remarkable effect on micro-structure, micro-hardness and scratch resistant properties. Tungsten content in Ni-W and $Ni-W-Si_3N_4$ alloy ranged from 7 to 14 at.%. Scratch test results suggest that as compared to Ni-W only, $Ni-W-Si_3N_4$ prepared from Ni/W molar ratio of 1:1.5 dispersed with 20 g/L $Si_3N_4$ has shown the best result among different samples.