• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 추계학술대회
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• pp.398-401
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• 2011

본 논문에서는 고효율의 CMOS PWM DC-DC 벅 변환기를 설계하였다. 설계된 CMOS PWM DC-DC 벅 변환기는 입력전압(3.4-3.9V)로부터 일정한 출력전압(1-2.8V)을 생성한다. Inductor-based 방식을 택하였고, 제어 대상은 전류이며, Pulse Width Modulation(PWM) 모드로 동작한다. 회로 구성은 Power Switch, Pulse Width Generation, Buffer, Zero Current Sensing, Current Sensing Circuit, Clock & Ramp generation, V-I Converter, Soft Start, Compensator, Modulator 등 이다. 제안된 CMOS PWM DC-DC 벅 컨버터는 Switching Frequency가 약 1MHz이고, 부하 전류가 약 40mA이상부터 CCM동작을 하며 100mA일 때 98.71%의 최대 효율을 갖는다. 또한, 출력전압 리플은 0.98mV이다(입력전압 3.5V, 출력전압 2.5V 기준). 제안된 회로의 검증을 위해 CMOS $0.18{\mu}m$ 공정을 이용하여 시뮬레이션을 수행하였다.

• Journal of Radiation Protection and Research
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• 제29권4호
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• pp.251-256
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• 2004

Phoswich 검출기를 제작하기 위하여 무기 섬광체인 CsI(Tl), $CdWO_4(CWO),\;Bi_4Ge_3O_{12}(BGO)$와 $Gd_2SiO_5:Ce(GSO)$의 특성을 연구하였다. CsI(Tl), CWO, BGO 및 GSO 섬광체의 radioluminescence 중심파장은 550 nm, 475 nm, 490 nm 및 440 nm이였고, neutral filter를 사용하여 측정한 CsI(Tl), CWO, BGO 및 GSO 섬광체의 절대광량은 각각 54890 phonon/MeV, 17762 phonon/MeV, 8322 phonon/MeV 및 8932 phonon/MeV이였으며, single photon method로 측정한 형광감쇠시간은 각각 $1.3{\mu}s,\;8.17{\mu}s$, 213 ns 및 37 ns이였다. 플라스틱 섬광체와 CsI(Tl) 섬광체를 사용하여 phoswich 검출기를 제작하였고 PSD(pulse shape discriminator) 방법으로 ${\beta}$ 입자와 ${\gamma}$ 선을 구별하며 각각의 방사선에 대한 파고 스펙트럼을 측정하였다.

• 한국산학기술학회논문지
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• 제7권6호
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• pp.1180-1184
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• 2006

유성음원과 무성음원을 사용하는 음성부호화 방식에 있어서 모음과 무성자음이 있는 프레임에서 음질저하 현상이 나타난다. 본 논문에서는 음질을 개선하기 위해 V/S/TSIUVC 스위칭과 TSIUVC 근사합성 방법을 사용한 새로운 멀티펄스 음성부호화 방식을 제시한다. TSIUVC는 영교차율과 개별피치 펄스에 의하여 추출되며, TSIUVC의 추출율은 여자와 남자음성에서 각각 91%와 96.2%를 얻었다. 여기에서 중요한 사실은 양질의 TSIUVC 합성 파형을 얻기 위해서는 0.547kHz 이하와 2.813kHz 이상의 주파수 정보를 사용하여야 한다. V/UV를 이용한 MPC와 V/S/TSIUVC를 이용한 FBD-MPC의 비교평가를 하였다. 실험결과, FBD-MPC의 음질이 MPC의 음질에 비하여 상당히 개선되었음을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.605-608
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• 1993

Breakdown characteristics of a small rod-to-rod microairgap has been studied for obtain an optimum breakdown voltage and an airgap spacing to be used as an emission control means by the electrical arc-burning unburnt carbon particulates exhausted from a power station burner. It is found that the breakdown voltage at the rod-to-rod airgap spacing in the rang of $1{\sim}100{\mu}m$ decreased with decrease in the rod-to-rod airgap spacing. And there were no minimum breakdown voltage on a $V_b$-Pd characteristics which is known as the minimum voltage in Paschen's law in air atmosphere. Breakdown voltages of the airgap at the constant airgap spacing were $V_{b-dc}>V_{b-ac}>V_{b-pulse}$, and it was lowest for the pulse voltage applied. As a result, it is found that a pulse power was one of effective power compared with dc or ac to be used as such an unburnt carbon particulate emission control means and the airgap spacing became to several tens ${\mu}m$, then the breakdown voltages were down to several handreds voltages.

• 약학회지
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• 제27권1호
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• pp.1-10
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• 1983

Voltammetric deposition and differential pulse anodic stripping (DPASV) of Ge(IV)at a gold electrode was investigated. Germanium (IV) exhibits two stripping peaks by DPASV in sodium borate solution, the first peak at about -1.1v. vs SCE and the second one, in the range of -0.6 to -0.2v. vs SCE. Factors affecting the sensitivity and precision included the nature of working electrode, supporting electrolytes, deposition potential, deposition time, pH, pulse height, voltage scan rate. The relative standard deviation of the measurements of the peak currents, for 100ng/ml Ge(IV), was less than ${\pm}3%$. The detection limit of Ge(IV) was 0.01ng/ml. Percent recovery in the extraction procedure of Ge(IV) from matrices by benzene in c-HCl, followed by back extraction with saturated borax solution, ranged from 96 to 104%.

• 전자공학회논문지D
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• 제35D권7호
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• pp.32-39
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• 1998

This paper presents the experimental results on the 3-electrode DC-PDP which has a common electrode to improve the PDP life cycle. The measured DC characteristic proves the effectiveness of common electrode absorbing about half of discharge currents. The waveforms for pulse memory operation of3-electrode PDP without crosstalk could also be determined from the I-V characteristics. The pulse memory drives of 8*8 cell array show the frequency response fo memory margin and the luminance efficiency of 3-electrode PDP are quite different from genrally known characteristics of 2-electrode DC-PDP.

• 전기학회논문지
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• 제57권7호
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• pp.1218-1222
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• 2008

We investigate the effect of rise time of a pulse bias voltage on atmospheric plasma generation. With the faster rise time of the pulse bias, the glow discharge appears to be more uniformly generated along the electrodes. I-V measurement confirms that higher loading power can be obtained using the faster rise time. A new understanding for atmospheric plasma generation at a micro-gap electrode is suggested.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.138-144
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• 1994

Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.129-134
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• 2005

SiP의 3D패키지에 있어서 구리도금은 매우 중요한 역할을 한다 이러한 구리 도금의 조건을 알아보기 위하여 조건이 다른 전해질에서 전기화학적 I-V특성을 분석하였다. 첨가제로 억제제와 촉진제의 특성을 분석하였다. 3D 패키지에 있어서 직경 50, 75, $100{\mu}m$의 via를 사용하였다. Via의 높이는 $100{\mu}m$로 동일하였다. Via의 내부는 확산방지층으로 Ta을 전도성 씨앗층으로 Cu를 magnetron 스퍼터링 방법으로 도포하였다. 직류, 펄스, 펄스-역펄스 등 전류의 파형을 변화시키면서 구리 도금을 하였다. 직류만 사용하였을 경우에는 결함 없이 via가 채워지지 않았으며 펄스도금을 한 경우 구리 충진이 개선을 되었으나 결함이 발생하였다. 펄스-역펄스를 사용한 경우 결함 없는 구리 충진층을 얻을 수 있었다.