• Title/Summary/Keyword: proton ion

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Clostridium acetobutylicum의 내산성 기작

  • 김병홍
    • The Microorganisms and Industry
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    • v.11 no.1
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    • pp.3-7
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    • 1985
  • 미생물은 고등생물과 그들이 생육하는 환경을 조절할 수 있는 능력이 제한되어 있다. 환경 변화에 따라 자신을 적응시킬 수 있는 능력이 있어야 끊임없이 변하는 환경에서 살아 남을 수 있고 다른 미생물과의 경재에서 이길 수 있다. 온도, 삼투압, 영양물질의 온도, 수소 ion농도는 자연계에서 짧은 시간에 넓은 폭으로 변하며 미생물에서 energy 대사의 중심이 되는 proton motive force를 이루는 proton gradient (.DELTA.pH)의 크기를 결정한는 중요한 환경인자이다.

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Room-Temperature Luminescence from Ion Beam or Atmospheric Pressure Plasma-Treated SrTiO3

  • Song, J.H.;Choi, J.M.;Cho, M.H.;Choi, E.J.;Kim, J.;Song, J.H.
    • Applied Science and Convergence Technology
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    • v.23 no.5
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    • pp.261-264
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    • 2014
  • $SrTiO_3$ (STO) single crystal irradiated with a 3-MeV proton beam exhibits blue and green mixed luminescence. However, the same proton beam when used to irradiate STO with a very thin layer of deposited Pt does not show any luminescence. This Pt layer prevents any damage which may otherwise be caused by arcing, which stems from the accumulated surface voltage of tens of kV due to the charge induced by secondary electrons on the surface of the insulator during the ion beam irradiation process. Hence, the luminescence of ion-irradiated STO originates from the modification of the STO surface layer caused by arcing rather than from any direct ion beam irradiation effect. STO treated with atmospheric-pressure plasma, a simple and cost-effective method, also exhibits the same type of blue and green mixed luminescence as STO treated with an ion beam, as the plasma also creates a layer of surface damage due to arcing.

Development of Polymer Film Mass Production by ion Beam Implantation (이온빔을 이용한 고분자 대전방지 처리 양산기술 개발)

  • Kil, Jae-Keun;Lee, Chan-Young;Shon, Chang-Won;Lee, Jae-Hyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1138-1141
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    • 2004
  • 고분자 재료에 이온을 주입하면 표면전기저항이 이온주입조건에 따라 $10^{16}\Omega/sq$ 에서 $10^7\Omega/sq$ 까지 변하게 되며, 광학적 특성도 변하게 된다. 이는 산업적으로 대전방지 등에 적용이 가능하며 이러한 신소재 개발을 위하여 산업용 이온빔 표면처리 장치를 제작하고 인출광학을 기초로 이온빔을 제어하여 고분자 재료의 이온주입처리 양산기술을 개발하였다. 본 연구에서는 대면적, 대전류 이온빔 인출을 위한 이온원의 광학적 설계 및 빔라인에서의 솔레노이드 전자석을 이용한 빔프로파일 제어방법을 설명하였다. 사용된 고분자 소재는 PC(PolyCarbonate) 및 PET(PolyEthylene Teraphthalate)이며, 질소이온주입조건은 이온에너지 40-50 keV, 이온주입량 $5\times10^{15}$, $1\times10^{16}$, $7\times10^{16}ions/cm^2$의 조건으로 공정을 수행하였다. 또한 대전방지용 고분자 대량생산을 위한 연속 생산조건과 양산공정조건에 따른 표면전기저항변화를 관찰하였다.

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Preparation and Their Characterization of Blended Polymer Electrolyte Membranes of Polysulfone and Sulfonated Poly(ether ether ketone) (Polysulfone/SPEEK 블랜드 고분자 전해질 막 제조 및 특성 연구)

  • Cheon, Hun-Sang;Oh, Min;Hong, Seong-Uk
    • Membrane Journal
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    • v.13 no.1
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    • pp.47-53
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    • 2003
  • Poly(ether ether ketone)(PEEK) was sulfonated using sulfuric acid and blended with polysulfone with various ratios. The blended polymer electrolyte membranes were characterized in terms of methanol permeability, proton conductivity and ion exchange capacity. As the amount of sulfonated PEEK increased, both methanol permeability and proton conductivity increased. This was due to the increase of ion exchange capacity. The experimental results indicated that the blend membrane with 20% polysulfone was the best choice In terms of the ratio of proton conductivity to methanol permeability.

Effect of the Molecular Weight of Poly(vinyl alcohol) Blended with Sulfonated Polysulfone Membranes for Fuel Cell Applications

  • Chang, Sung-Hyuk;Chung, Sung-Il;Rhim, Ji-Won
    • Korean Membrane Journal
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    • v.5 no.1
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    • pp.18-24
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    • 2003
  • In order to improve the mechanical properties of the sulfonated polysulfone (SPSf) membranes previously synthesized in our laboratory, poly(vinyl alcohol) (PVA) was blended which is well known as the excellent physical and chemical properties. The resulting membranes blended with several molecular weight of PVA varying from 13,000 to 124,000 have been characterized to investigate the effect of PVA molecular weight in terms of ion conductivities, methanol permeabilities, water contents and ion exchange capacities for both heat treated and untreated membranes at 150$^{\circ}C$. The proton conductivity is decreased as the molecular weight of PVA increases. The plain SPSf-6.0 showed the proton conductivity of 0.078 S/cm whereas the blended membrane with M.W. 31,000 PVA indicated 0.04 S/cm. For methanol permeabilities, when PVA is added to SPAf-6.0, methanol crossover is increased because of the gain of the hydrophilicity from 3.4 to 6.5${\times}$10$\^$-6/ $\textrm{cm}^2$/s. For the annealed blended membranes (with M.W. 31,000 PVA), both the methanol corssover and proton conductivity showed very consistent values, about 2.3${\times}$10$\^$-6/ $\textrm{cm}^2$/s and 0.036 S/cm, respectively.

Hypsochromic Shifts in Retinochrome Absorption Spectra in the Presence of Nitrate

  • Takemori, Nobuaki;Mizukami, Taku;Tsujimoto, Kazuo
    • Journal of Photoscience
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    • v.9 no.2
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    • pp.264-266
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    • 2002
  • The absorption wavelength of the protonated retinal Schiff base can be controlled by the surrounding environment. An external anion is related to fine adjustment of the absorption wavelength. The addition of anion to retinochrome solution caused blue shift in spectra. The increase of the shift was dependent on the ion concentration. The large shift value was obtained as 20 nm at the saturated concentration of nitrate. The shift intensity for the nitrate addition exceeded that of chloride. Seemingly, it depends on the ionic strength or lyotropic character of the anion. However, neither of sulphate nor gluconate ion showed remarkable blue shift. These phenomena were accounted for with (1) delocalization of the positive charge in the conjugated polyene system, (2) ionic bonding strength between the counter ion (glutamate) and the proton, and/or (3) interaction of the added anion with the proton on Schiff base.

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SOI wafer formation by ion-cut process and its characterization (Ion-cut에 의한 SOI웨이퍼 제조 및 특성조사)

  • Woo H-J;Choi H-W;Bae Y-H;Choi W-B
    • Journal of the Korean Vacuum Society
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    • v.14 no.2
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    • pp.91-96
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    • 2005
  • The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

Design Study for Pulsed Proton Beam Generation

  • Kim, Han-Sung;Kwon, Hyeok-Jung;Seol, Kyung-Tae;Cho, Yong-Sub
    • Nuclear Engineering and Technology
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    • v.48 no.1
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    • pp.189-199
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    • 2016
  • Fast neutrons with a broad energy spectrum, with which it is possible to evaluate nuclear data for various research fields such as medical applications and the development of fusion reactors, can be generated by irradiating proton beams on target materials such as beryllium. To generate short-pulse proton beam, we adopted a deflector and slit system. In a simple deflector with slit system, most of the proton beam is blocked by the slit, especially when the beam pulse width is short. Therefore, the available beam current is very low, which results in low neutron flux. In this study, we proposed beam modulation using a buncher cavity to increase the available beam current. The ideal field pattern for the buncher cavity is sawtooth. To make the field pattern similar to a sawtooth waveform, a multiharmonic buncher was adopted. The design process for the multiharmonic buncher includes a beam dynamics calculation and three-dimensional electromagnetic simulation. In addition to the system design for pulsed proton generation, a test bench with a microwave ion source is under preparation to test the performance of the system. The design study results concerning the pulsed proton beam generation and the test bench preparation with some preliminary test results are presented in this paper.

Kinetic Study of Proton Exchange between Al($H_2O$)$_6^{3+}$ Ion and Bulk Water Molecules (Ⅰ) (Al($H_2O$)$_6^{3+}$ 이온과 물 용매 분자 사이에서의 수소 이온 교환의 반응속도론적 연구 (Ⅰ))

  • Moon-Hwan Cho;Jin-Ho Kim;Chang-Ju Yoon
    • Journal of the Korean Chemical Society
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    • v.32 no.5
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    • pp.436-442
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    • 1988
  • The $^1H-nmr$ lineshapes of $H_2O$ in the solution containing $Al^{3+}$ ion have been measured as a function of temperature and $H^+$-ion concentration. Above [$H^+$] = 0.06, the lineshape were analyzed by the uncoupled two-site exchange model. From the proton exchange rate between hexaaquaaluminium ion and bulk water as a function of H-ion concentration. These kinetic data could be fitted to a following linear rate law; that is; 1/${\tau}$ = k$_1$/12 + $k_2$[$H^+$]/6. The following proton exchange parameters were obtained; $k_1^{298}$ = 38.5s$^{-1}$ ${\{Delta}H_1^{\neq}$ = $42.9kJ mole^{-1}$ ${\{Delta}S_1^{\neq}$ = -48.6J $mole^{-1}K^{-1}$ $k_2^{298}$ = $172s^{-1}mole^{-1}$ ${\{Delta}H_2^{\neq}$ = 27.8kJ $mole^{-1}$ ${\{Delta}S_2^{\neq}$ = -90.3J $mole^{-1}K^{-1}$ These activation parameters are indicating an associative interchange, Ia, mechanism for the acid-hydrolysis of hexaaquaaluminium ion and the proton exchange between the hydration spheres of $Al^{3+}$ and $H^+$.

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