• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.1-8
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• 2004

The SOI wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by TRIM simulation that 65 keV proton implantation is required for the standard SOI wafer (200 nm SOI, 400 nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the 6∼$9\times10^{16}$ $H^{+}/\textrm{cm}^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. The depth distribution of implanted hydrogen has been experimentally confirmed by ERD and SIMS measurements. The microstructure evolution in the damaged layer was also studied by X-TEM analysis.

• Polymer(Korea)
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• v.38 no.6
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• pp.801-808
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• 2014

Ion diffusion and chemical binding to acrylic polymer were investigated in a solid film. The composition of acrylic monomers containing amino group and carboxylic acid was adjusted for rapid ion migration in the film. p-Methylred (PMR) and phenolphthalein derivatives were optically sensitive to the concentration of proton and hydroxyl anion, respectively and verified the ion migration through the film layers. A rapid proton migration was observed in the film of a high amino content. On the other hand, $OH^-$ migration occurred rapidly in a high content of carboxylic acid group. The proton migration occurred through the internal layer as well as surface layer of a film and was reversible during 50 repetition examination. Copper(II) ion migration was examined with a Rhodamine-containing polymer film. The light absorption and emission spectra of a Rhodamine-Cu complex showed the key contribution of carboxylic acid group to the Cu(II) migration in a film.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.53 no.2
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• pp.150-155
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• 2008

This experiment was carried out to investigate the effect of proton ion and gamma-ray irradiation on microspore culture of the flower buds of $M_2$ generation in winter type of Brassica napus L. ssp. oleifera. The seeds of three rape varieties, 'Halla', 'Naehan' and 'Tammi' were pretreated with proton ion and gamma-ray 400 Gy and 600 Gy, respectively. When microspore culture techniques were used, embryogenesis was increased in some varieties by proton ion and gamma-ray irradiation treated flower buds of $M_2$ generation than control. In genotypes 'Naehan' showed the highest embryo production frequency, but 'Tammi' showed lowest embryo production frequency. Some of the embryoids developed directly into plantlets, whereas others developed abnormally multilobe. Plants were regenerated and successfully acclimatized in pots.

• Nuclear Engineering and Technology
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• v.56 no.5
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• pp.1754-1761
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• 2024

In hadrontherapy, secondary fragments are generated by nuclear interactions of the incident heavy ion beam with the atomic nuclei of the target. It is important to determine the yield of production and the dose contribution of these secondary fragments in order to determine the radiobiological effectiveness more accurately. This work aims to fully identify the secondary fragments generated by nuclear interactions of proton and helium (⁴He) ion beams in a High-Density Polyethylene (HDPE) target and to investigate the dose contributions by secondary fragments. Incident protons with energies of 55.90 MeV and 105.20 MeV and helium ions with energies of 52.55 MeV/u and 103.50 MeV/u in the HDPE phantom have been investigated by the means of Geant4 Monte Carlo (MC) simulations. Simulated results were validated using NASA Space Radiation Laboratory (NSRL) Bragg curves experimental data. The results showed that the dose contribution of secondary fragments deriving from helium ion beams is three times higher than in the case of proton beams. This is due to a higher production of nuclear fragments in the case of helium ion beams. This work contributes to a better understanding of secondary fragments generated by protons and helium ions in the HDPE target.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1173-1182
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• 2018

Mesoporous silica allows proper hydration of an ion exchange membrane under low relative humidity due to its strong hydrophilicity and structural characteristic. A mesoporous silica and Nafion composite membrane shows good proton conductivity under low relative humidity. An understanding of ion-channel formation and proton transfer through an ion-channel network in mesoporous silica and Nafion composite membranes is essential for the development and the optimization of ion exchange membranes. In this study, a mesoporous cellular foam $SiO_2/Nafion$ composite membrane is fabricated, and its proton conductivity and performance are measured. Also, the ion-channel distribution is analyzed by using electrostatic force microscopy to measure the surface charge density of the mesoporous cellular foam $SiO_2/Nafion$ composite membrane. The research reveals a few remarkable results. First, the composite membrane shows excellent proton conductivity and performance under low relative humidity. Second, the composite membrane is observed to form ion-channel-rich and ion-channel-poor region locally.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.252-254
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• 2002

A new protocol for dosimetry in external beam radiotherapy is published by the Japan Society of Medical Physics (JSMP) in 2002. The protocol deals with proton and heavy ion beams as well as photon and electron beams, in accordance with IAEA Technical Report Series No. 398. To establish inter-institutional uniformity in proton beam dosimetry, an intercomparison program was carried out with the new protocol. The absorbed doses are measured with different cylindrical ionization chambers in a water phantom at a position of 30-mm residual range for a proton beam, that had range of 155 mm and a spread out Bragg peak (SOBP) of 60-mm width. As a result, the intercomparison showed that the use of the new protocol would improve the +/- 1.0 % (one standard deviation) and 2.7 % (maximum discrepancy) differences in absorbed doses stated by the participating institutions to +/- 0.3% and 0.9 %, respectively. The new protocol will be adopted by all of the participants.

• Current Optics and Photonics
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• v.3 no.2
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• pp.172-176
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• 2019

The work reports on the fabrication of an optical planar waveguide in the Nd:CNGG crystal by the 0.4-MeV hydrogen ion implantation with a fluence of $8.0{\times}10^{16}ions/cm^2$. The nuclear energy loss of the implanted hydrogen ions was derived by using SRIM 2013 code. The microscope image of the proton-implanted Nd:CNGG crystal cross section was captured by a metallographic microscope. The transmittance spectra were recorded before and after the ion implantation. The light intensity distribution of the planar waveguide at 632.8 nm was experimentally measured to validate its effect on one dimension confinement. The investigation shows that the proton-implanted Nd:CNGG waveguide is a candidate for an optoelectronic integrated device.

• Journal of the Korean institute of surface engineering
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• v.39 no.5
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• pp.235-239
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• 2006

The aluminum nitride(AlN) layer on Al7075 substrate has been formed through nitrogen ion implantation process. The implantation process was performed under the conditions : 100 keV energy, total ion dose up to $2{\times}10^{18}\;ions/cm^2$. XRD analysis showed that aluminum nitride layers were formed by nitrogen implantation. The formation of Aluminum nitride enhanced surface hardness up to 265HK(0.02 N) from 150HK(0.02 N) for the unimplanted specimen. Micro-Knoop hardness test showed that wear resistance was improved about 2 times for nitrogen implanted specimens above $5\;{\times}\;10^{17}\;ions/cm^2$. The friction coefficient was measured by Ball-on-disc type wear tester and was decreased to 1/3 with increasing total nitrogen ion dose up to $1\;{\times}\;10^{18}ions/cm^2$. The enhancement of mechanical properties was observed to be closely associated with AlN formation. AES analysis showed that the maximum concentration of nitrogen increased as ion dose increased until $5\;{\times}\;10^{17}\;ions/cm^2$.

• Transactions on Electrical and Electronic Materials
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• v.9 no.5
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• pp.206-208
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• 2008

Implantation of metals and ceramics with ions of nitrogen and other species has improved surface properties such as friction, wear and corrosion in numerous industrial applications. In recent years, PCB drills tend to be more minimized increasingly as the electronics components have been more highly accumulated and minimized. Therefore nitrogen ion implantation was performed onto PCB drill (0.15 & 0.3 mm in diameter), in order to investigate mechanical properties of WC-Co cermets surface through Nano-indentation tests. PCB drill was implanted at energy of 70 keV, 90 keV, 120 keV and with the dose range of $1{\times}10^{17}$ and $5{\times}10^{17}\;ions/cm^{2}$. After ion implantation, WC-Co PCB drill bits was tested in actual operating situation to apply cutting tools industry and is concluded that the life time of nitrogen ion implanted PCB drills is one and a half times longer than the unimplanted.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.333-333
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• 2011

We studied the H/D exchange kinetics of pure and acid dopped water-ice film by using the techniques of reactive ions scattering (RIS) and low energy sputtering (LES) with low kinetic energy cesium ion beam (<35 eV). From RIS, neutral water isotopomers were detected in the form of cesium-molecule ion clusters, $CsX^+$ (X= $H_2O$, HDO, $D_2O$). Ionic species, like $H_3O^+$, $DH_2O^+$, $D_2HO^+$, $D_3O^+$, adsorbed on the surface were ejected via LES process. Those techniques allowed us to trace the isotopomeric populations of water-ice film. To show the catalytic effect of excess proton in the H/D exchange reaction, our study was conducted with two types of water-ice films. In film 1, about 0.5 BL of $H_2O$ was adsorbed on HCl (0.1 ML) dopped $D_2O$ (8 BL) film. In film 2, similar amount of $H_2O$ used in film 1 was adsorbed on pure $D_2O$ film. Kinetic data were obtained from each film type for 90-110 K (film 1) and 110-130 K (film 2) and fitted with numerically integrated lines. Through the Arrhenius plot of kinetic coefficient deduced from fitting of the H/D exchange reaction, the activation energy of film 1 and 2 were estimated to be $10{\pm}3kJmol^{-1}$ and $17{\pm}4kJmol^{-1}$. This activation barrier difference could be understood from detailed pictures of H/D exchange. In film 2, both the formation of ion pair, $H_3O^+$ and OH. and proton transfer were needed for the H/D exchange. However, in film 1, only proton transfer was necessary but ion pair formation was not, so this might reduce the activation energy.