• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.32.4-32
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• 2002

We consider inertial navigation system (INS) sensor redundancy and propose a method which uses singular value decomposition to detect and isolate faults when even two sensors have faults simultaneously. When redundant sensor configuration is given, such as symmetric configuration in INS, the range space and null space of configuration matrix are determined. We use null space of configuration matrix and define 21 reference fault vectors which include 6 one-fault vectors and 15 two-fault vectors. Measurements are projected into null space of measurement matrix and compared with 21 normalized reference fault vectors, which determines fault detection and isolation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.6
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• pp.1409-1413
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• 2013

This paper analyzed the change of subthreshold current for channel doping concentration of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for channel doping concentration, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. As a result, we know the subthreshold current was influenced on parameters of Gaussian function and channel doping concentration for DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2267-2272
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• 2012

This study has presented the analysis of subthreshold swings based on scaling theory for double gate MOSFET. To solve the analytical potential distribution of Poisson's equation, we use Gaussian function to charge distribution. The scaling theory has been used to analyze short channel effect such as subthreshold swing degradation. These scaling factors for gate length, oxide thickness and channel thickness has been modified with the general scaling theory to include effects of double gates. We know subthreshold swing degradation is rapidly reduced when scaling factor of gate length is half of general scaling factor, and parameters such as projected range and standard projected deviation have greatly influenced on subthreshold swings.

• Journal of the Korean Society of Safety
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• v.28 no.4
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• pp.8-13
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• 2013

Fatigue crack growth tests were conducted on urban railway wheel steel under mode I and mixed-mode conditions. Fatigue crack growth rates were evaluated in terms of equivalent stress intensity factor ranges, using both the extended and projected crack lengths. The equivalent stress intensity factor range with the growth rate results obtained under mode I loading conditions can be used to predict the crack growth rate under mixed-mode loading conditions. Extended crack length rather than projected crack length is appropriate for the prediction of the crack growth rate under the mixed-mode loading conditions.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2403-2408
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• 2013

This paper has analyzed the change of forward and backward current for channel doping concentration to analyze off-current of double gate(DG) MOSFET. The Gaussian function as channel doping distribution has been used to compare with experimental ones, and the two dimensional analytical potential distribution model derived from Poisson's equation has been used to analyze the off-current. The off-current has been analyzed for the change of projected range and standard projected range of Gaussian function with device parameters such as channel length, channel thickness, gate oxide thickness and channel doping concentration. As a result, this research shows the off-current has greatly influenced on forward and backward current for device parameters, especially for the shape of Gaussian function for channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.9
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• pp.2000-2006
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• 2011

In this paper, the drain induced barrier lowering(DIBL) for doping distribution in the channel has been analyzed for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing because of adventages to be able to reduce the short channel effects(SCEs) to occur in convensional MOSFET. DIBL is SCE known as reduction of threshold voltage due to variation of energy band by high drain voltage. This DIBL has been analyzed for structural parameter and variation of channel doping profile for DGMOSFET. For this object, The analytical model of Poisson equation has been derived from Gaussian doping distribution for DGMOSFET. To verify potential and DIBL models based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and DIBL for DGMOSFET has been investigated using this models.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.48-56
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• 1999

In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

• Journal of Biosystems Engineering
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• v.28 no.4
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• pp.351-360
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• 2003

This study was carried out to settle the plugging problem which occurs frequently when agricultural wettable powder is used in pest control work using the crushing and the dispersing effects caused by irradiation of ultrasonic wave. Sonication was applied to the wettable powder suspension in a beaker for 30 seconds using a 28 kHz, 200 W PZT BLT, and the image of suspension before and after sonication was observed using a microscope and a SEM. The image of tow commercial wettable powder suspensions in water observed using an optics microscope showed that the agglomerated particles were irregularly distributed over the whole observed region when stirred mechanically, while showing more uniform distribution composed of comparatively single particles in the whole observed region after sonication. Concerning the above, the projected areas of particles in the four suspensions after sonication were decreased distinctively in the observed range of the microscope and the atomization of crystals was much developed. Over the measured range of 5.6∼4,157 ${\mu}$m particle size, the overall projected area of particles was decreased to 58.3∼89.6% on the average after sonication. When the SEM images of sonicated wettable powder suspensions dissolved in water and CH$_3$OH were compared to the suspensions before sonication, such phenomena as the atomization of particles, the expansion of voids between particles, the reduction and the decrease of agglomerated particle groups, and the progress of crack developments on the surface of flake-shaped particles were observed. It seemed possible that the plugging problem that occurs frequently in pest control machine when using wettable powder would be settled by the use of sonication.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.11
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• pp.2643-2648
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• 2015

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

• Archives of Plastic Surgery
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• v.45 no.3
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• pp.284-288
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• 2018

Dynamic infrared thermography (DIRT) has been used for the preoperative mapping of cutaneous perforators. This technique has shown a positive correlation with intraoperative findings. Our aim was to evaluate the accuracy of perforator mapping with DIRT and augmented reality using a portable projector. For this purpose, three volunteers had both of their anterolateral thighs assessed for the presence and location of cutaneous perforators using DIRT. The obtained image of these "hotspots" was projected back onto the thigh and the presence of Doppler signals within a 10-cm diameter from the midpoint between the lateral patella and the anterior superior iliac spine was assessed using a handheld Doppler device. Hotspots were identified in all six anterolateral thighs and were successfully projected onto the skin. The median number of perforators identified within the area of interest was 5 (range, 3-8) and the median time needed to identify them was 3.5 minutes (range, 3.3-4.0 minutes). Every hotspot was correlated to a Doppler sound signal. In conclusion, augmented reality can be a reliable method for transferring the location of perforators identified by DIRT onto the thigh, facilitating its assessment and yielding a reliable map of potential perforators for flap raising.