• 제목/요약/키워드: pressure dependence

검색결과 508건 처리시간 0.022초

Viscosity Prediction of Synthetic Lubricants from Temperature and Pressure Dependence of Dielectric Relaxation Time

  • Suzuki, A.;Masuko, M.
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.355-356
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    • 2002
  • The dielectric permittance and the dielectric loss factor of several lubricating oils were measured at frequencies from 100 Hz to 1.5 MHz. The measurements were carried out under atmospheric pressure as a function of temperature and under fixed temperature as a function of pressure. Temperature and pressure dependence of dielectric relaxation time were investigated. The temperature dependence of relaxation time obeyed the Vogel-Fulcher-Tammann (VFT) law. We modified the VFT equation in order to express the dielectric relaxation time as a function of temperature and pressure. Furthermore. by taking into consideration the similarity of the temperature and pressure dependence between dielectric relaxation and mechanical relaxation. the prediction of high-pressure viscosity were conducted. The predicted results were compared with the viscosity data obtained from the falling-sphere type viscometer.

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SF6분자가스의 압력 의존도 (The Dependence on the Gas Pressure in SF6 Molecular Gas)

  • 전병훈
    • 한국전기전자재료학회논문지
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    • 제20권9호
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    • pp.816-820
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    • 2007
  • We measured the electron drift velocity, W, in 0.5% $SF_6-Ar$ mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 0.5 Torr by the double shutter drift tube with a variable drift distance, and calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. The measured and calculated values at different gas pressure at each E/N was appreciable dependence in the results on the gas pressure.

The Growth Kinetics of Tin Oxide Films from Tetramethyltin

  • 이상운;윤천호
    • Bulletin of the Korean Chemical Society
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    • 제20권9호
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    • pp.1031-1034
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    • 1999
  • Tin oxide films have been grown employing the chemical vapor deposition technique under reduced pressure conditions using tetramethyltin as the precursor and oxygen as the oxidant. An activation energy derived for the deposition reaction under representative deposition conditions has a value of 89±3 kJ mol-1, suggesting a typical kinetic control. Deposition rates of tin oxide films exhibit a near first order dependence on tetramethyltin partial pressure and a zeroth order dependence on oxygen partial pressure. This study provides the first quantitative information about the growth kinetics of tin oxide films from tetramethyltin by the cold-wall low-pressure chemical vapor deposition.

액체질소 절연파괴전압의 상관 분석 (Correlation Analysis of the Dielectric Breakdown Voltage of Liquid Nitrogen)

  • 백승명
    • 한국전기전자재료학회논문지
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    • 제28권6호
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    • pp.396-399
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    • 2015
  • We analyzed the correlation between breakdown voltage(BDV) of liquid nitrogen(LN2) and factors. The chosen factors affecting the breakdown are the diameter of electrode, gap length, temperature of LN2, and pressure of LN2. The BDV of LN2 was increased with increasing the diameter, the gap length and the pressure. And The BDV of LN2 was increased with decreasing the temperature. However, correlation coefficient was different from each other depending on the situation. The BDV exhibited a very high correlation coefficient of 0.92227 to dependence on the diameter. And a very high correlation coefficient of 0.94980 to dependence on the pressure under sphere(D 7.5 mm)-plane electrode. When the pressure is applied, sphere-plane electrode is the correlation coefficient was higher than that of the needle-plane electrode. It shows the dependence of a temperature coefficient of -0.758290 ~ -0.39946 under needle-plane electrode.

최소발화에너지의 압력의존성에 관한 연구 (A Study on Pressure Dependence of Minimum Ignition Energy)

  • 하동명;이수경
    • 한국가스학회지
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    • 제1권1호
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    • pp.7-13
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    • 1997
  • 최소발화에너지의 압력의존성을 고찰하기 위해 열발화이론, 열전달개념, 이상기체법칙, 그리고 반응속도론에 의해 시도하였다. 최소발화에너지와 압력의 상관관계식을 문헌자료의 다중회귀분석을 통하여 수식화하였다. 이 방법에 적용한 물질은 대표적인 탄화수소인 프로판과 노말펜탄이었다. 제시된 방법론에서 압력변화에 따른 예측된 최소발화에너지는 아주 작은 평균오차에서 문헌값과 일치하고 있다. 따라서 제시된 방법론은 탄화수소의 최소발화 에너지를 예측하는 일반적인 방법으로 제시하고 있다.

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PRESSURE DEPENDENCE OF THE CURIE TEMPERATURE IN MnAlGe

  • Endo, S.;Matsuzaki, H.;Ono, F.;Kanomata, T.;Kaneko, T.
    • 한국자기학회지
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    • 제5권5호
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    • pp.380-382
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    • 1995
  • The pressure dependence of the Curie temperature was determined in 2-dimensional like ferromagnet, MnAlGe up to a maximum pressure of 7.5 Gpa through measurements of electric resistance vs temperature curves. The pressure coefficient was positive with a considerably high rate of 9 K/GPa in the low pressure ragion, while it decreased gradually down to one order of magnitude smaller value at the maximum pressure. It was concluded that ther is an upper limit of about 550 K in the super-exchange type ferromagnetic interaction between Mn layers.

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실리콘 저항형 압력센서의 온도 보상에 관한 연구 (A Study on Temperature Compensation of Silicon Piezoresistive Pressure Sensor)

  • 최시영;박상준;김우정;정광화;김국진
    • 대한전자공학회논문지
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    • 제27권4호
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    • pp.563-570
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    • 1990
  • A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

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톨루엔의 점성도에 대한 압력 의존성 (Pressure Dependence of the Viscosity of Toluene)

  • 김정림
    • 대한화학회지
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    • 제43권3호
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    • pp.251-256
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    • 1999
  • 여러 온도와 압력에서 톨루엔의 점성도를 공낙하법에 의하여 결정하고 톨루엔의 점성도에 대한 온도 및 압력 의존성을 연구하였다. 톨루엔의 점성 흐름에 관한 엇갈림 변형력으로부터 엇갈림 자유 에너지, 엇갈림 엔트로피, 엇갈림 엔탈피 등을 정의하여 압력 변화에 따르는 열역학적 성질의 변화를 고찰하였다. 실험적으로 결정된 엇갈림 자유 에너지, 엇갈림 엔트로피, 엇갈림 엔탈피 등을 온도 상승에 의한 톨루엔 분자들의 열운동 효과와 압력 증가에 의한 밀도 증가 및 분자의 입체 효과에 의하여 설명하였다.

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Pressure Dependence of Acoustic Properties of Liquid Ethanol by using High-pressure Brillouin Spectroscopy

  • Ko, Jae-Hyeon;Jeong, Min-Seok;Lee, Byoung Wan;Kim, Jae Hyun;Ko, Young Ho;Kim, Kwang Joo;Kim, Tae Hyun;Kojima, Seiji;Ahart, Muhtar
    • 한국광학회지
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    • 제24권5호
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    • pp.279-286
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    • 2013
  • Brillouin spectroscopy has been widely used for the investigation of acoustic properties of condensed matters in the hypersonic region. A high-pressure Brillouin spectrometer was set up by combining a diamond anvil cell and a tandem multi-pass Fabry-Perot interferometer. It was successfully applied to liquid ethanol, and the pressure dependence of the sound velocity, the refractive index and other acoustic properties were derived based on the measurements. The detailed optical setup and experimental procedure are described.

적층형 필름 Chip Capacitor 개발 (A Study on the Stacked type Film Chip Capacitor)

  • 송호근;박상식;연강흠;김성호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1991년도 추계학술대회 논문집
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    • pp.73-78
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    • 1991
  • In this study of stacked type film chip capacitor, the important parameters are heat-treated temperature, pressure and time. We measured the temperature dependence of dielectric properties and dissipation factor and the frequency dependence of dielectric properties, dissipation factor, ESR(Equivalent Series Resistance) and impedance in stacked type film capacitor. As a result, the best conditions of heat-treated temperature, pressure and time were proved to be 130$^{\circ}C$, 10kg/$\textrm{cm}^2$ and 3hrs, respectively.