• 대한산업공학회지
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• 제21권1호
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• pp.51-65
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• 1995

This paper presents an automatic fixture planning system for machining processes of prismatic parts. A rationalized approach to integrate fixture planning with process planning is proposed and representation schemes for workpiece, part design information with features, machine tools, cutting tools and fixtures are developed. The proposed system implements two activities of fixture planning such as machining of reference surfaces and machining of features. For machining of reference surfaces, the machining sequence of reference surfaces is determined by using decision tables, which are drawn from relations of part dimension, degree of surface roughness, fixture type and its capacity, cutting tool's capacity and experienced planners' knowledge. For machining of features, a preferential machining orientation is selected for its feature which can be machined in more than one direction, and features with the same machining orientation are grouped, and the machining sequence of features is determined by interactive mode. A case study is performed to show the performance of the proposed system.

• 한국결정성장학회지
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• 제3권2호
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• pp.149-156
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• 1993

Si과 흑연 주형사이에 release layer로서 $CaCl_2$를 사용하여 vold와 crack이 없는 건전한 다결정 Si ingot를 제조하였다. 원소재로서 merallurgical-grade Si를 사용하였으며, 결정성장속도와 응고분율에 따른 불순물농도변화, X-선 회절분석, 비저항측정등을 행하였다. X-선 회절분석 결과 R=0.5mm/min으로 성장된 다결정 Si의 우선성장방향은 (220)면이고, R=0.2mm/min의 경우 우선성장방향은 (111)면임을 확인하였다. 또한 결정성장속도 및 응고분율의 증가에 따라 비저항값은 감소하는 경향을 나타내었다.

• 대한금속재료학회지
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• 제50권1호
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• 폴리머
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• 제26권4호
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• pp.431-438
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• 2002

편광 푸리에 변환 적외선 분광법을 이용하여 액정 디스플레이의 배향막으로 널리 사용되는 폴리이미드 필름의 편광 자외선 조사에 따른 액정의 배향성과 열적 안정성을 연구하였다. 편광자외선이 조사된 폴리이미드의 경우, 조사된 편광자외선의 극성 방향에 평행한 폴리이미드 분자들의 우선적인 광분해 반응으로 인하여 편광자외선 조사 후 남아 있는 폴리이미드 분자들은 조사된 편광자외선 극성 방향과 수직 배향을 나타내었다. 하지만 러빙 처리된 폴리이미드 필름은 러빙 방향과 평행하게 폴리이미드 분자들의 재배향이 유도됨을 확인하였다. 또한 편광자외선이 조사된 폴리이미드 배향막이 편광자외선 조사를 통한 폴리이미드 분자들의 단편화 반응 때문에 러빙 처리된 폴리이미드 배향막 보다는 열적 안정성이 저하됨을 확인하였다.

• 폴리머
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• 제26권2호
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• pp.209-217
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• 2002

편광 푸리에 변환 적외선 분광법과 자외선 분광법을 이용하여 액정 display (LCD)의 배향막으로 널리 사용되는 폴리이미드 (PI) 필름의 편광 자외선 (PUV) 조사에 따른 액정의 배향 메카니즘을 연구하였다. UV 측정 결과, PI 필름은 360 nm 이하 파장의 자외선을 주로 흡수하여 광화학 반응이 유도됨을 알 수 있었다. 또한, PUV가 조사된 PI의 경우, PI 분자들의 분해로 인해 FT-IR 흡수 피크들의 강도가 조사시간에 따라 감소하였고, $3244 cm^{-1}$ 부근에서 완만한 곡선 형태의 새로운 피크가 형성되었다. 또한 조사된 PUV의 극성 방향에 평행한 PI 분자들의 우선적인 광분해 반응으로 인하여 PUV 조사 후 남아 있는 PI 분자들은 조사된 PUV 극성 방향과 수직 배향을 나타내었다. 하지만 러빙 처리된 PI 필름은 러빙 방향과 평행하게 PI 분자들의 재배향이 유도됨을 확인하였다. 또한 러빙 처리 및 PUV가 조사된 PI 배향막을 차용하여 제조된 액정 셀에서는 액정이 러빙 방향에 대해서는 평행하게, 조사된 PUV의 극성방향과는 수직으로 배향함을 확인하였다.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.44.1-44.1
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• 2009

최근 경조직 재생 (hard tissue regeneration) 에 대한 연구가 활발히 진행되고 있다. 그러나 이와같은 연구는 결손도입의 어려움 및 이차적인 골절의 위험성 때문에 대형동물을 중심으로 진행되고 있으며, 그 결과 동물실험에 있어서 시간적 경제적으로 큰 리스크를 수반한다. 그러나 유전자 변형동물의 대부분은 마우스이며, 분자생물학적 관점에서 골재생의 과정을 이해하기 위해서는 마우스를 이용한 골재생 모델의 확립이 필요하다. 따라서 본 연구에서는 마우스를 통해 경조직 재생모델의 제작방법을 검토함과 동시에, 골재생부위에 대한 골질 (bone quality) 및 골양 (bone quantity) 평가의 방법을 수립하는 것을 목적으로 하였다. 골결손은 생후 8주의 마우스에 시술하였다. 치과용 드릴을 이용하여 경골 (tibia) 길이의 30 % 부근의 내측(medial) 면에서 골수강 (marrow cavity) 방향으로 $500\;{\mu}m\varphi$의 원주형 결손을 도입하였다. 시술 후의 골재생과정을 관찰하기 위해 ${\mu}CT$ (SMX-100CT: Simazu) 를 이용하여 주기적으로 촬영하였으며, 골양 (BV/TV) 의 회복과정은3D-bon (RATOC) 을 이용하여 정량적인 해석을 수행하였다. 그리고 재생부의 골질 (아파타이트 배행성; BAp orientation) 평가는 투과형micro-beam XRD (R-AXIS BQ: Rigaku)를 이용하여 수행하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1507-1510
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• 2005

This study was carried out as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-\mu{m}-deep$ indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.49 GPa and 100 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46-0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined area during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• 한국정밀공학회지
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• 제23권8호
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• pp.171-177
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• 2006

This study was performed as a part of the research on the development of a maskless and electroless process for fabricating metal micro/nanostructures by using a nanoindenter and an electroless deposition technique. $2-{\mu}m$-deep indentation tests on Ni and Cu samples were performed. The elastic recovery of the Ni and Cu was 9.30% and 9.53% of the maximum penetration depth, respectively. The hardness and the elastic modulus were 1.56 GPa and 120 GPa for Ni and 1.51 GPa and 104 GPa for Cu. The effect of single-point diamond machining conditions such as the Berkovich tip orientation (0, 45, and $90^{\circ}$ ) and the normal load (0.1, 0.3, 0.5, 1, 3, and 5 mN), on both the deformation behavior and the morphology of cutting traces (such as width and depth) was investigated by constant-load scratch tests. The tip orientation had a significant influence on the coefficient of friction, which varied from 0.52-0.66 for Ni and from 0.46- 0.61 for Cu. The crisscross-pattern sample showed that the tip orientation strongly affects the surface quality of the machined are a during scratching. A selective deposition of Cu at the pit-like defect on a p-type Si(111) surface was also investigated. Preferential deposition of the Cu occurred at the surface defect sites of silicon wafers, indicating that those defect sites act as active sites for the deposition reaction. The shape of the Cu-deposited area was almost the same as that of the residual stress field.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1174-1177
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• 1995

In this paper, electrical properties CdS/CdTe heterojunction solar cell prepared by electron beam evaporation method were investigated. Crystal structure of CdS films deposited at substrate temperature of $50{\sim}250^{\circ}C$ was hexagonal type with preferential orientation of the (002)plane parallel to the substrate. Optical transmittance of the CdS film is increasing and resistivity is decreasing with increasing subsrate temperature. CdS/CdTe Solar cell characteristics were improved by increasing of substrate and annealing temperature. However, low efficiency due to small Jsc, Voc below 0.3 $mA/cm^2$ and 430 mV are observed. Low efficiency is contributed to be high resistance of CdTe films and contact.