• KIEE International Transactions on Electrophysics and Applications
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• 제11C권4호
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• pp.99-106
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• 2001

An overview of Silicon Carbide (SiC) Static Induction Transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additionally, the impact of velocity saturation and temperature effects on SCLC are reviewed. The small-signal model, breakdown voltage, power density, and different gate structures are also discussed, before a final review of published SiC SIT results. Published S-band (3-4 GHz) results include 9.5 dB of gain and output power of 120 W, and L-band (1.3 GHz) results include 400 W output power, 7.7 dB of gain, and power density of 16.7 W/cm.

• KEPCO Journal on Electric Power and Energy
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• 제2권2호
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• pp.223-225
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• 2016

The newly proposed analysis method using a direct-current current-voltage (DCIV) simulation is introduced for investigating leakage current composing MOS transistor. From comparing the density and location of traps using DCIV method and investigating the leakage current of gate channel transistor, we proposed the graphical analysis method to correlate the DCIV current and leakage mechanism by the traps. And, our graphical method intuitively explains that leakage current in MOS transistor is well correlated with the DCIV current of the MOS transistor arrays due to two kinds of traps created by Fowler-Nordheim (F-N) stress and Hot carrier stress, respectively.

• 전력전자학회논문지
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• 제6권5호
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• pp.453-459
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• 2001

본 논문에서는 Two-transistor 포워드 컨버터에서 사용 가능한 기존의 소프트 스위칭 기법과 새로운 소프트 스위칭 기법의 손실 분석을 수행한다. 두 트랜지스터에서 발생하는 스너버 전류에 의한 트랜지스터 손실과 내부 커패시터에 의한 턴-온 손실을 유도하고, 각각의 트랜지스터에서 발생하는 전체 손실을 계산한다. 손실 계산을 통해 기존의 소프트 스위칭 기법에서는 두 트랜지스터에서 발생하는 손실이 상이함을 보이고, 새로운 소프트 스위칭 기법에서는 손실이 적으면서도 두 트랜지스터에서의 손실이 고르게 발생함을 알 수 있다. 그리하여 제안된 소프트 스위칭 스너버를 사용하여 고른 열분포와 향상된 신뢰도를 얻을 수 있음을 보인다.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.167-171
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• 2014

This paper examines the destruction behavior of NPN BJT (bipolar junction transistor) by repetition pulse. The injected pulse has a rise time of 1 ns and the maximum peak voltage of 2 kV. Pulse was injected into the base of transistor. Transistor was destroyed, current flows even when the base power is turned off. Cause the destruction of the transistor is damaged by heat. Breakdown voltage of the transistor is 975 V at single pulse, and repetition pulse is 525~575 V. Pulse repetition rate increases, the DT (destruction threshold) is reduced. Pulse Repetition rate is high, level of transistor destruction is more serious.

• ETRI Journal
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• 제25권5호
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• pp.288-296
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• 2003

In this study, we present a 260k color TFT LCD driver chip set that consumes only 5 mW in the module, which has exceptionally low power consumption. To reduce power consumption, we used many power-lowering schemes in the logic and analog design. A driver IC for LCDs has a built-in graphic SRAM. Besides write and read operations, the graphic SRAM has a scan operation that is similar to the read operation of one row-line, which is displayed on one line in an LCD panel. Currently, the embedded graphic memory is implemented by an 8-transistor leaf cell and a 6-transistor leaf cell. We propose an efficient scan method for a 6-transistor embedded graphic memory that is greatly improved over previous methods. The proposed method is implemented in a 0.22 ${\mu}m$ process. We demonstrate the efficacy of the proposed method by measuring and comparing the current consumption of chips with and without our proposed scheme.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(5)
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• pp.69-72
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• 2000

This paper describes an SRAM write driver circuit which dissipates small power. The write driver utilizes a dual sized transistor structure to reduce operating current in the write cycle. In the case of higher voltage comparing to Vcc, only one transistor is active, while in the case of low Vcc two transistors are active so as to deliver the current twice. Thus though with the high voltage operation, the power consumption is reduced with keeping the speed in a given specification. Simulation results have verified the functionality of the new circuit and write power is reduced by 7 % per bit.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.168-169
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• 2007

Organic transistors are promising in the future development of active devices for flexible, low-cost and large-area photoelectric devices. However, conventional organic field-effect transistors have lowspeed, low-power, and relatively high operational voltage. Vertical type transistors show high-speed and high-current characteristics and are suitable for driver elements of flexible displays.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.91-94
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• 2000

This paper introduces the design of low-power, fast-locking delay locked-loop using complementary pass transistor logic(CPL). Low-power design has become one of the most important in the modem VLSI application. CPL has the advantage of fast speed, high density, and low power with signal buffering between stages. Based on this analysis, we concluded that the I/O performance can be beyond 500㎒, 2-poly, 2-metal 0.65$\mu\textrm{m}$, 3.3V supply.

• 센서학회지
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• 제26권4호
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• pp.292-296
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• 2017

It has become ever harder to design reliable circuits with each nanometer technology node under normal operation conditions, a transistor device can be affected by various aging effects resulting in performance degradation and eventually design failure. The reliability (aging) effect has traditionally been the area of process engineers. However, in the future, even the smallest of variations can slow down a transistor's switching speed, and an aging device may not perform adequately at a very low voltage. Because of such dilemmas, the transistor aging is emerging as a circuit designer's problem. Therefore, in this paper, the impact of aging effects on the delay and power dissipation of digital circuits by using nanomneter MOSFET power gating structure has been analyzed.. Based on this analyzed aging models, a reliable digital circuits can be designed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.226-228
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• 2005

This paper presents the single-stage High Power Factor TTFC(Two-Transistor Forward Converter). Recently, due to growing concern about the harmonic pollution of power distribution systems and the adoption of standards such as ICE 61000-3-2 and IEEE 519, There is a need to reduce the harmonic contests of AC line currents of power supplies. This research proposed the single-stage two switch forward circuit for low voltage and high current output.