• ETRI Journal
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• v.38 no.5
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• pp.962-971
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• 2016

A wireless power transfer (WPT) system is generally designed with the optimum source and load impedance in order to achieve the maximum power transfer efficiency (PTE) at a specific coupling coefficient. Empirically or intuitively, however, it is well known that a high PTE can be attained by adjusting either the source or load impedance. In this paper, we estimate the maximum achievable PTE of WPT systems with the given load impedance, and propose the condition of source impedance for the maximum PTE. This condition can be reciprocally applied to the load impedance of a WPT system with the given source impedance. First, we review the transducer power gain of a two-port network as the PTE of the WPT system. Next, we derive two candidate conditions, the critical coupling and the optimum conditions, from the transducer power gain. Finally, we compare the two conditions carefully, and the results therefore indicate that the optimum condition is more suitable for a highly efficient WPT system with a given load impedance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.7
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• pp.620-626
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• 2015

In this paper, a 2~6 GHz wideband GaN power amplifier MMIC is designed and fabricated using a second-order all-pass filter for input impedance matching and an LC parallel resonant circuit for minimizing an output reactance component of the transistor. The second-order all-pass filter used for wideband lossy matching is modified in an asymmetric configuration to compensate the effect of channel resistance of the GaN transistor. The power amplifier MMIC chip that is fabricated using a $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors, Corp. is $2.6mm{\times}1.3mm$ and shows a flat linear gain of about 13 dB and input return loss of larger than 10 dB. Under a saturated power mode, it also shows output power of 38.6~39.8 dBm and a power-added efficiency of 31.3~43.4 % in 2 to 6 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.12
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• pp.78-83
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• 2010

In this paper, a novel dual-band power amplifier using metamaterials has been realized with one RF GaN HEMT diffusion metal-oxide-semiconductor field effect transistor. The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. We have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 900 MHz and 2140 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 900 MHz and 2140 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) and IMD of 60.2 %, -23.17dBc and 67.3 %, -25.67dBc at two operation frequencies, respectively.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.401-406
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• 2004

In this paper, a new time-domain adaptive predistortion scheme is proposed to compensate for the nonlinearity of high power amplifiers (HPA) in OFDM systems. A complex Wiener-Hammerstein model (WHM) is adopted to describe the input-output relationship of unknown HPA with linear dynamics, and a power series model with memory (PSMWM) is used to approximate the HPA expressed by WHM. By using the PSMWM, the compensation input to HPA is calculated in a real-time manner so that the linearization from the predistorter input to the HPA output can be attained even if the nonlinear input-output relation of HPA is uncertain and changeable. In numerical example, the effectiveness of the proposed method is confirmed and compared with the identification method based on PSMWM.

• ETRI Journal
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• v.27 no.5
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• pp.569-578
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• 2005

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

• Journal of IKEEE
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• v.13 no.3
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• pp.1-6
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• 2009

In this paper, the external matching circuits were designed in order to compensate the efficiency which decreases by human body effect in the internal antenna phone. Comparing the two types of matching circuit, we selected the structure to minimize the switch stress. RF MEMS switch using low voltage was compared with FET switch and measured the performance in the handset. Here, the detection circuit which can couple th reflection power from antenna was added in the handset and we set up the demonstration system that can compensate the loss of hand effect automatically. In this system, when hand effect occurred, the radiation power increased 2.5dB by operation the matching circuit.

• Textile Coloration and Finishing
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• v.13 no.6
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• pp.397-404
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• 2001

The accurate representation of the colors of dyed fabric on a color CRT(cathode ray tube) screen is the basis for the automatic process in dyeing industry. In the former study, we had focused on the theoretically color matching method between CIE(International Commission on illumination) and RGB color coordinates, but In this study we tried simulating the colors obtained from fabrics on the color CRT by using experimental method. we obtained the following results. 1. We could simulate all of the color CRT by gamut mapping method, even though some of the KOSCOTE(Korea Standard Color of Textile) colors represented on the color CRT didn't exist in the region of color region 2. We could do conditional matching by CIE system, even though it was hard to do invariant matching the Red, Green, Blue phosphors of the color CRT because of the SPD(Spectral Power Distribution) which had been set up before. 3. We could simulate all the colors obtained from fabrics on the color CRT by matching those two color groups from KOSCOTE fabrics and color CRT using match algorithm and matching programs. 4. If we get over on obstacles by grafting CCM and CCK machines which have been used in educational and industrial areas by matching KOSCOTE with color CRT we will be able to invent color simulation system controled automatically.

• Textile Coloration and Finishing
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• v.13 no.6
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• pp.39-39
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• 2001

The accurate representation of the colors of dyed fabric on a color CRT(cathode ray tube) screen is the basis for the automatic process in dyeing industry. In the former study, we had focused on the theoretically color matching method between CIE(International Commission on Illumination) and RGB color coordinates, but In this study we tried simulating the colors obtained from fabrics on the color CRT by using experimental method. we obtained the following results. 1. We could simulate all of the color CRT by gamut mapping method, even though some of the KOSCOTE(Korea Standard Color of Textile) colors represented on the color CRT didn′t exist in the region of color region. 2. We could do conditional matching by CIE system, even though it was hard to do invariant matching the Red, Green, Blue phosphers of the color CRT because of the SPD(Spectral Power Distribution) which had been set up before. 3. We could simulate all the colors obtained from fabrics on the color CRT by matching those two color groups from KOSCOTE fabrics and color CRT using match algorithm and matching programs. 4. If we get over on obstacles by grafting CCM and CCK machines which have been used in educational and industrial areas by matching KOSCOTE with color CRT we will be able to invent color simulation system controled automatically.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.3
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• pp.159-166
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• 2018

Herein, a non-Foster matching circuit is designed to improve the impedance matching characteristics of small antennas in the VHF and UHF bands. The proposed non-Foster circuit is designed to operate with negative capacitance in a wide frequency band from 50 MHz to 1,000 MHz for use in various communication bands. To ensure the stability of the non-Foster circuit with conditional stability, the open-circuit stability condition of Linvill was satisfied, and the circuit was fabricated using the FR-4 substrate. The fabricated non-Foster circuit was combined with a small antenna to verify its performance by measuring the return loss and received power in the FM, DMB, and GSM bands. The measured return loss was improved from -6 dB to -30 dB, and the measured received power was improved from 0.5 dBm to 5.2 dBm.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2729-2734
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• 2011

In this paper, an active replica Low-dropout(LDO) regulator with DC voltage matching circuit is presented. In order to match the voltage between replica and output of regulator, DC voltage matching circuit is designed. The active replica low dropout regulator has higher Power Supply Rejection(PSR) than that of conventional regulator. The designed DC voltage matching circuit can reduce the drawback that may be occurred in replica regulator. And using fully active element in regulator can reduce the chip area and heat noise with resistor. As results of HSPICE simulation with 0.35um CMOS parameter, the designed active replica LDO regulator achieves Power Supply Rejection, -28@10Hz better than -17@10Hz of conventional replica regulator without DC matching circuit. And the output voltage is 3V.