• 영어영문학
• /
• 제56권1호
• /
• pp.157-178
• /
• 2010

A critique on Freud's remembering taken place in the 80's and 90s has a significant impact on a paradigm shift: from the discursive constructivism to the neo-empiricism. Along with Marx and Nietzsche, Freud was one of the main intellectual sources in formulating the Cultural Studies, known as the political corrections in the later period of Post-modern era. In the wake of feminism, there was a social happening, namely, a memory restoration, when a woman therapist helped a woman patient to restore the past and come up with her father as the cause of her trauma. Finally, 'the false memory syndrome' brought up a hot issue firing on the controversy about Freudian remembering. Freud as a clinical therapist began to be a sole target to be criticized. Strangely enough, however, Freud was continually utilized by such theorists as Julia Kristeva, Homi Bhabah, and Žižek, while having dissenters like Deleuze, Quattari, and Butler. Of those intellectual claims, this paper focuses on the debates by the dissenters not from the discursive theorists but from the clinical studies: Sulloway, Grunbaum, and Crews. My argument directs to the empirical side of Freud for the conclusion that the dispute on him was a seed of a paradigm shift towards the neo-empiricism, after one century's flourishing of constructivism.

• 한국정보과학회:학술대회논문집
• /
• 한국정보과학회 2005년도 한국컴퓨터종합학술대회 논문집 Vol.32 No.1 (A)
• /
• pp.784-786
• /
• 2005

SPM (Scratch-Pad Memory)을 위한 코드 배치 기법과 demand paging기법을 Post pass optimizer를 사용하여 구현한다. 코드 배치 문제는 ILP (Integer Linear Programming) 문제로 변환하여 해결한다. 최적 화기는 ILP 해답의 질을 높이기 위해 응용 프로그램의 프로파일 정보를 사용하고, 코드로부터 natural loop을 추출한다. 또한 SPM을 사용하여 demand paging을 할수 있도록 추가 코드를 삽입한다. 이 기법을 사용해 6개의 내장형 응용 프로그램을 실험하였고, 프로그램 크기의 $20\%$에 해당하는 SPM에 대해 전력 소모는 $75.9\%$로 감소하였고 성능은 $54.5\%$ 증가하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.861-864
• /
• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.84-85
• /
• 2005

Dislocations are often found at Shallow Trench Isolation (STI) process after repeated thermal cycles. The residual stress after STI process often leads defect like dislocation by post STI thermo-mechanical stress. Thermo-mechanical stress induced by STI process is difficult to remove perfectly by plastic deformation at previous thermal cycles. Embedded flash memory process is very weak in terms of post STI thermo-mechanical stress, because it requires more oxidation steps than other devices. Therefore, dislocation-free flash process should be optimized.

• 감성과학
• /
• 제18권2호
• /
• pp.85-100
• /
• 2015

본 연구에서는 오정보가 제시된 경우, 원기억의 존재여부를 사건관련전위 기반 숨긴정보검사 (Event-Related Potential based Concealed Information test: ERP-based CIT)를 사용하여 확인하고자 하였다. 오정보 제시 여부를 조작하여 두 가지 실험 조건을 구성한 후 각 조건의 피험자들을 대상으로 뇌파를 측정하여 P300 진폭, 면적 및 잠재기와 반응시간을 분석하였다. 조건별 피험자 수는 각 20명이었고, Cz, Pz와 Oz영역에서 뇌파를 측정하였다. 본 연구의 결과는 두 가지로 요약할 수 있다. 첫째, Cz, Pz와 Oz영역의 P300 면적에 대한 분석에서 오정보 제시여부와 자극 종류의 상호작용 효과가 나타났다. 둘째, 오정보 조건에서의 P300 진폭에 대한 분석 결과 Pz영역에서 오정보에 대한 P300 진폭과 무관련 정보에 대한 P300 진폭은 다른 것으로 나타났으나, 원정보에 대한 P300 진폭은 오정보 또는 무관련 정보에 대한 P300 진폭과 다르지 않은 것으로 나타났다. 이러한 연구 결과는 원기억이 오정보에 대한 기억과 함께 존재할 가능성과 원기억이 부분적으로 손상되었을 가능성을 보여주는 것이라고 할 수 있다. 논의에서는 분석 결과에 대한 세부적인 해석, 본 연구의 단점 및 보완할 수 있는 가능한 방법과 향후 연구의 방향에 대해 논의하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.134-134
• /
• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.574-577
• /
• 2002

In recent year, BLT$(Bi_{3.25}La_{0.75}Ti_3O_{12})$ has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $(Bi_{3.25}La_{0.75}Ti_3O_{12})$ Target with a ceramic process. The BLT target was sintered at $1100^{\circ}C$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric property as a functions of post annealing time. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample for 30 minutes. This sample exhibited the (117) preferred crystal orientation, current density of $2{\times}10^{-8}A/cm^2$, a remanent polarization of $10{\mu}C/cm^2$ and a coercive field of 62.1 KV/cm respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.529-529
• /
• 2007

Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제16권5호
• /
• pp.657-663
• /
• 2016

In this work, a novel silicon (Si) based floating body synaptic transistor (SFST) is studied to mimic the transition from short-term memory to long-term one in the biological system. The structure of the proposed SFST is based on an n-type metal-oxide-semiconductor field-effect transistor (MOSFET) with floating body and charge storage layer which provide the functions of short- and long-term memories, respectively. It has very similar characteristics with those of the biological memory system in the sense that the transition between short- and long-term memories is performed by the repetitive learning. Spike timing-dependent plasticity (STDP) characteristics are closely investigated for the SFST device. It has been found from the simulation results that the connectivity between pre- and post-synaptic neurons has strong dependence on the relative spike timing among electrical signals. In addition, the neuromorphic system having direct connection between the SFST devices and neuron circuits are designed.

• Fisheries and Aquatic Sciences
• /
• 제25권8호
• /
• pp.450-461
• /
• 2022

A randomized, double-blind, and placebo-controlled clinical study was used to determine the cognitive functions related to working memory (WM) and antioxidant properties of fermented Laminaria japonica (FLJ) on healthy volunteers. Eighty participants were divided into a placebo group (n = 40) and FLJ group (n = 40) that received FLJ (1.5 g/day) for 6 weeks. Memory-related blood indices (brain-derived neurotrophic factor, BDNF; angiotensin-converting enzyme; human growth hormone, HGH; insulin-like growth factor-1, IGF-1) and antioxidant function-related indices (catalase, CAT; malondialdehyde, MDA; 8-oxo-2'-deoxyguanosine, 8-oxo-dG; thiobarbituric acid reactive substances, TBARS) were determined before and after the trial. In addition, standardized cognitive tests were conducted using the Cambridge Neuropsychological Test Automated Batteries. Furthermore, the Korean Wechsler Adult Intelligence Scale (K-WAIS)-IV, and the Korean version of the Montreal Cognitive Assessment (MoCA-K) were used to assess the pre and post intake changes on WM-related properties. According to the results, FLJ significantly increased the level of CAT, BDNF, HGH, and IGF-1. FLJ reduced the level of TBARS, MDA, and 8-oxo-dG in serum. Furthermore, FLJ improved physical activities related to cognitive functions such as K-WAIS-IV, MoCA-K, Paired Associates Learning, and Spatial Working Memory compared to the placebo group. Our results suggest that FLJ is a potential candidate to develop functional materials reflecting its capability to induce antioxidant mechanisms together with WM-related indices.