• Title/Summary/Keyword: post-CMP cleaning

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Analysis on the defect and scratch of Chemical Mechanical Polishing Process (CMP 공정의 Defect 및 Scratch의 유형분석)

  • Kim, Hyung-Gon;Kim, Chul-Bok;Kim, Sang-Yong;Lee, Cheol-In;Kim, Tae-Hyung;Chang, Eui-Goo;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.189-192
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    • 2001
  • Recently, STI process is getting attention as a necessary technology for making high density of semiconductor by devices isolation method. However, it does have various problems caused by CMP nprocess, such as torn oxide defects, nitride residues on oxide, damages of si active region, contaminations due to post-CMP cleaning, difficulty of accurate end point detection in CMP process, etc. In this work, the various defects induced by CMP process was introduced and the above mentioned problems of CMP process was examined in detail. Finally, the guideline of future CMP process was presented to reduce the effects of these defects.

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Analysis on the defect and scratch of Chemical Mechanical Polishing process (CMP 공정의 Defect 및 Scratch의 유형분석)

  • 김형곤;김철복;정상용;이철인;김태형;장의구;서용진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.189-192
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    • 2001
  • Recently, STI process is getting attention as a necessary technology for making high density of semiconductor by devices isolation method. However, it does have various problems caused by CMP process, such as torn oxide defects, nitride residues on oxide, damages of si active region, contaminations due to post-CMP cleaning, difficulty of accurate end point detection in CMP process, etc. In this work, the various defects induced by CMP process was introduced and the above mentioned Problems of CMP process was examined in detail. Finally, the guideline of future CMP process was presented to reduce the effects of these defects.

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CMP properties of $SnO_2$ thin film ($SnO_2$ 박막의 CMP 특성)

  • Lee, Woo-Sun;Choi, Gwon-Woo;Ko, Pil-Ju;Hong, Kwang-Jun;Seo, Young-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.184-187
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    • 2003
  • As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

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Particle Removal on Buffing Process After Copper CMP (구리 CMP 후 버핑 공정을 이용한 연마 입자 제거)

  • Shin, Woon-Ki;Park, Sun-Joon;Lee, Hyun-Seop;Jeong, Moon-Ki;Lee, Young-Kyun;Lee, Ho-Jun;Kim, Young-Min;Cho, Han-Chul;Joo, Suk-Bae;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.1
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    • pp.17-21
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    • 2011
  • Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.

CMP properties of $SnO_2$ thin film (가스센서 $SnO_2$ 박막의 광역평탄화 특성)

  • Choi, Gwon-Woo;Lee, Woo-Sun;Park, Jeng-Min;Choi, Seok-Jo;Park, Do-Sung;Kim, Nam-Oh
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1600-1604
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    • 2004
  • As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

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Chemical Mechanical Polishing Characteristics of Mixed Abrasive Slurry by Adding of Alumina Abrasive in Diluted Silica Slurry (탈이온수로 희석된 실리카 슬러리에 알루미나 연마제가 첨가된 혼합 연마제 슬러리의 CMP 특성)

  • 서용진;박창준;최운식;김상용;박진성;이우선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.6
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    • pp.465-470
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    • 2003
  • The chemical mechanical polishing (CMP) process has been widely used for the global planarization of multi-layer structures in semiconductor manufacturing. The CMP process can be optimized by several parameters such as equipment, consumables (pad, backing film and slurry), process variables and post-CMP cleaning. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, the slurry dominates more than 40 %. In this paper, we have studied the CMP characteristics of diluted silica slurry by adding of raw alumina abrasives and annealed alumina abrasives. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

CMP properties of $SnO_2$ thin film by different slurry (슬러리 종류에 따른 $SnO_2$ 박막의 광역평탄화 특성)

  • Lee, Woo-Sun;Choi, Gwon-Woo;Ko, Pil-Ju;Kim, Wan-Tae;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.389-392
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    • 2004
  • As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

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Effect of Citric Acid in Cu Chemical Mechanical Planarization Slurry on Frictional Characteristics and Step Height Reduction of Cu Pattern

  • Lee, Hyunseop
    • Tribology and Lubricants
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    • v.34 no.6
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    • pp.226-234
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    • 2018
  • Copper chemical mechanical planarization (CMP) has become a key process in integrated circuit (IC) technology. The results of copper CMP depend not only on the mechanical abrasion, but also on the slurry chemistry. The slurry used for Cu CMP is known to have greater chemical reactivity than mechanical material removal. The Cu CMP slurry is composed of abrasive particles, an oxidizing agent, a complexing agent, and a corrosion inhibitor. Citric acid can be used as the complexing agent in Cu CMP slurries, and is widely used for post-CMP cleaning. Although many studies have investigated the effect of citric acid on Cu CMP, no studies have yet been conducted on the interfacial friction characteristics and step height reduction in CMP patterns. In this study, the effect of citric acid on the friction characteristics and step height reduction in a copper wafer with varying pattern densities during CMP are investigated. The prepared slurry consists of citric acid ($C_6H_8O_7$), hydrogen peroxide ($H_2O_2$), and colloidal silica. The friction force is found to depend on the concentration of citric acid in the copper CMP slurry. The step heights of the patterns decrease rapidly with decreasing citric acid concentration in the copper CMP slurry. The step height of the copper pattern decreases more slowly in high-density regions than in low-density regions.

Study of T Type Waveguide in Single Wafer Megasonic Cleaning for Post CMP (T형의 waveguide를 이용한 Post CMP용 메가소닉 세정장치에 대한 연구)

  • Kim, Tae-Gon;Lee, Yang-Lae;Lim, Eui-Su;Kang, Kook-Jin;Kim, Hyun-Se;Park, Jin-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.364-365
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    • 2006
  • Transverse some wave was generated by T type waveguide for single wafer cleaning application T type megasonic waveguide was analyzed by acoustic pressure measurements and particle removal efficiency. Compared to conventional longitudinal waves, not like longitudinal waves, transverse waves showed changes of direction and phase which increased the cleaning efficiency.

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