• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.3
• /
• pp.43-48
• /
• 2012

Errors of relative permittivity calculation caused by the variation of sample aspect ratio (diameter/height) and measuring geometry were analyzed by computer simulation and measurement. Firstly, the $S_{21}$ spectrum of the sample (permittivity 38) was simulated in the post resonator measuring apparatus by HFSS simulation. Then, the relative permittivity was calculated from the $TE_{011}$ mode resonant frequency. The relative permittivity varied by ca. 0.3% with sample aspect ratio variation (D/H=0.8~1.6). The relative permittivity varied by ca. 1~10% when the 1~10% of air-gap was introduced in between the dielectric disk and upper conductor. All the simulation results showed consistent tendency with real measurement.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2008.05a
• /
• pp.59-62
• /
• 2008

In this paper, we study ZnO-based a film bulk acoustic resonator (FBAR) using a multi-layered Bragg reflector. We insert chromium adhesion layers of 0.03 mm-thick to the Bragg reflector and improve the performance using thermal treatments. At operating frequency about 2.5 GHz, excellent resonance characteristics are observed in terms of good return loss and high quality factor.

• Journal of information and communication convergence engineering
• /
• v.3 no.3
• /
• pp.137-141
• /
• 2005

The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p}).$ These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.

• Journal of the Korean Ceramic Society
• /
• v.43 no.9 s.292
• /
• pp.527-531
• /
• 2006

In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.

• 한국초전도학회:학술대회논문집
• /
• v.10
• /
• pp.201-206
• /
• 2000

Effects of the post-annealing temperature of CeO$_2$ buffer layers on the properties of YBCO films on CeO$_2$-buffered sapphire were investigated. 45 nm-thick CeO$_2$ buffer layer was prepared in-situ on r-cut sapphire using an on-axis rf magnetron sputtering method, which was later post-annealed at temperatures between 950$^{\circ}$C and 1100$^{\circ}$C in an oxygen-flowing environment. YBCO films were prepared on CeO$_2$-buffered sapphire (CbS), for which the surface morphology, crystal structures and electrical properties of the YBCO films were studied. YBCO films on post-annealed CbS appeared to have better properties than those on as-grown CbS with regard to the morphological, structural and electrical properties when the YBCO films were prepared on CeO$_2$ buffer layer post-annealed at temperatures of 1000 - 1050$^{\circ}$C. A TE$_{011}$ mode rutileloaded cylindrical cavity resonators was fabricated with the YBCO films placed as the endplates, for which the unloaded Q of the resonator was measured. It turned out that the resonator with the endplates prepared from the YBCO films on postannealed CbS at 1000 $^{\circ}$C showed the highest unloaded Q with the value more than 8 ${\times}$ 10$^5$ at 30 K and 8.6 CHz, revealing that the YBCO films on post-annealed CbS at 1000$^{\circ}$C the temperature could be the lowest among the YBCO films on post-annealed CbS.

• Journal of Astronomy and Space Sciences
• /
• v.18 no.2
• /
• pp.119-128
• /
• 2001

The oscillation frequency tuning range of waveguide Gunn oscillator and its stability depend sensitively on the dimensions of the resonator. Therefore the embedding impedances with the various dimensions of the resonator for Q-band (33 ∼ 50 GHz) Gunn oscillator are calculated by using HFSS (High Frequency Structure Simulator). In this paper the comparisons between theoretical results of embedding impedances as a function of frequency and that of experimental results are described. And the oscillation frequency range could be predicted by using the theoretical evaluation methods which were proposed in this paper It shows that post size has an effect on the frequency tuning characteristics of Gunn oscillator.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.1
• /
• pp.376-380
• /
• 2005

The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss (S$_{11}$) and quality factor (Q$_{s/p}$). These thermal techniques seem very promising for enhancing FBAR resonance performance.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.2
• /
• pp.311-315
• /
• 2005

In this paper, we emphasize the advantage of thermal annealing treatments for improvement characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on multi-layer thin films, namely, Bragg reflectors. Sintering and/or annealing processes were applied in our experiments. The measurements confirm once again a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p})$. these thermal treatment techniques are really promising for enhancing performance of FBAR resonators in industry fabrication of RF devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2003.02a
• /
• pp.122-122
• /
• 2003

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2007.06a
• /
• pp.437-440
• /
• 2007

This paper presents the improvement of the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices fabricated on multilayer Bragg reflectors (BRs) based on inserting ultra-thin chromium (Cr) adhesion layers into BRs and post-annealing processes. The measurements show excellent improvement of return loss $(S_{11})$ and Q-factor by the combined use of Cr adhesion layers and thermal treatments particularly for 120 minutes at $200^{\circ}C$.