• Progress in Superconductivity
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• 제7권1호
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• pp.52-57
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• 2005

[ $YBa_{2}Cu_{3}O_y$ ] superconducting films were prepared on $LaAlO_3$(100) single crystal substrate by spray pyrolysis method. The precursor solution was prepared by dissolving nitrate powders in de-ionized water. Both of ultrasonic and concentric nebulizers were used in order to generate fine droplets of precursor solution. C-axis oriented films were obtained at deposition temperature of $750\~850^{\circ}C$ and working pressure of 100 Torr and 500 Torr. In case of ultrasonic nebulizer, films showed rough and porous surface morphology due to formation of enormous droplets, while smooth and dense films were obtained for concentric nebulizer. A transport $J_c$ value of $0.43\;MA/cm^2$ at 77 K and self field was achieved on $LaAlO_3$(100) single crystal substrate.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2000년도 춘계학술강연 및 발표대회 강연 및 발표논문 초록집
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• pp.11-11
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• 2000

Large-size ceramic/metal bulk FGMs have been fabricated on a recently developed and the world's largest Spark Plasma Sintering(SPS) systems, As a part of the development program for practical production processes and machines for FGMs by SPS, the processes, mechanical properties, dimensional size and shape effects, and production machine systems were investigated. In the past, $ZrO_{2}$/TiAI, $ZrO_{2}$/Ni, $Al_{2}O_{3}$/Ti, WC/Co, WC/Co/Steel, A1/P, Polymide, Cu/Polymide, nano-composites, porous and other combinations of bulk FGMs have already been processed using SPS. However, most of the specimen sizes were small, in a range of 20 to 30mm in diameter. Recently disk-shape sintered compacts with diameters of 100 and 150 mm, and thickness of approximately 15 and 17 mm, $ZrO_{2}$(3Y)/ stainless steel FGMs were homogenous consolidated in a shorter sintering time, while maintaining high quality and repeatability by utilizing a temperature gradient sintering method. The SPS heating up and holding time totaled less than one hour. Therefore, the SPS process in expected to find increased use in the fabrication of large-size FGMs as a new industrial processing technology. This paper introduces SPS systems, the processing principles, features and the characteristies of ceramic/metal bulk FGM.

• 한국재료학회지
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• 제12권1호
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• pp.89-93
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• 2002

To investigate the effect of properties of pores in anodic alumina template(AAT) on the formation and characteristics of metal nano wires, Cu and Ni nano wires were manufactured using anodic alumina template formed in various electrolytes. The characteristics of prepared metal nano wires using AAT could be replicated from those of pores in AAT. The diameters of nano wires could be controlled by the widening process of anodic porous film in $H_3PO_4$ solution. The shape ratio of the nano wire was shown to be $170{\pm}30$ for Ni nano wire formed by AAT made in sulfuric acid.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.222-224
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• 2006

A non-vacuum process for $Cu(In,Ga)Se_2$ (CIGS) thin film solar cells from nanoparticle precursors was described in this work CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials $(CuI,\;InI_3,\;GaI_3\;and\;Na_2Se)$ in organic solvents, by which fine CIGS nanoparticles of about 20nm in diameter were obtained. The nanoparticle precursors were mixed with organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of CIGS with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents ud to burn the organic binder material. Subsequently, the resultant (porous) CIGS/Mo/glass simple was selenized in a two-zone Rapid Thermal Process (RTP) furnace in order to get a solar ceil applicable dense CIGS absorber layer. Complete solar cell structure was obtained by depositing. The other layers including CdS buffer layer, ZnO window layer and Al electrodes by conventional methods. The resultant solar cell showed a conversion efficiency of 0.5%.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.189-192
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• 2014

Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

• 공업화학
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• 제25권5호
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• pp.531-537
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• 2014

본 연구에서는 휘발성유기화합물의 일종인 아이소프로필 알코올(IPA) 산화에 촉매-플라즈마 반응 시스템을 이용하였다. ${\alpha}-Al_2O_3$로 이루어진 다공성 세라믹에 산화구리를 0.5% (w/w) 담지하여 촉매로 사용하였으며, 촉매상에 직접 플라즈마를 생성시켜 표면이 바로 플라즈마에 노출되도록 하였다. 촉매-플라즈마 공정의 특성을 파악하기 위하여 방전전압 및 온도 변화에 따른 IPA 및 분해부산물의 농도를 측정하였다. 촉매-플라즈마 반응기를 단열시키지 않았을 경우, 전압 17 kV (방전전력 : 28 W)에서 반응기 온도가 $120^{\circ}C$까지 증가하였으며, 유량 $1L\;min^{-1}$ (산소 : 10% (v/v); IPA : 1000 ppm) 조건에서 IPA가 모두 제거되었다. 그러나 $120^{\circ}C$ 이하의 온도에서는 바람직한 생성물인 이산화탄소 이외에도 아세톤, 포름알데하이드, 일산화탄소와 같은 유해 분해 부산물이 생성되었다. 반면 촉매-플라즈마 반응기 외부를 단열했을 때는 같은 조건에서 반응기 내부 온도가 $265^{\circ}C$까지 증가하였으며, IPA가 대부분 이산화탄소로 산화되었다. 다공성 세라믹에 산화구리를 담지하지 않았을 때는 촉매-플라즈마 반응기를 단열해도 이산화탄소와 일산화탄소가 유사한 비율로 생성되었다. 한편, 플라즈마를 생성시키지 않고 촉매만 단독으로 사용했을 때는(반응온도 : $265^{\circ}C$), 분해된 IPA의 70% 이상이 또 다른 휘발성유기화합물인 아세톤으로 전환되었으며, 이를 통해 촉매 단독공정보다 촉매-플라즈마 복합 공정이 IPA 산화에 더 효과적임을 알 수 있었다.

• 한국재료학회지
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• 제20권11호
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• pp.600-605
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• 2010

In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.