• Economic and Environmental Geology
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• v.45 no.2
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• pp.181-188
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• 2012

The 1M and $2M_1$ stacking sequences are the most frequently encountered in the illite species among the possible 6 polytypes. The $1M_d$, derived from the 1M polytype which exhibits a variable degree of disorder in the stacking sequence, is also observed in illite samples. In this paper, the author introduces and reviews the theoretical background of the quantitative analysis method of illite polytypes, and considers the possibility to determine the fault age and its reactivation age using K/Ar age-dating based on the quantification of illite polytypes in the fault system. For the increase of the accuracy and precision of the illite age analysis method, the occurrence, identification, and mineralogical characterization of illite polytypes should be defined in detail. The broadening effect of (hkl) reflections, due to disordering of 1M polytype and the presence of I/S minerals with expandability, are also considered as the main parameters controlling the quantification of illite polytypes using the WILDFIRE(C)simulation.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.31-36
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• 1989

In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Journal of the Mineralogical Society of Korea
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• v.14 no.2
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• pp.119-127
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• 2001

FTIR spectroscopic study was undertaken on dickite and pyrophyllite with Si and Al cations in the far-infrared(Far-IR) and mid-infrared (Mid-IR) regions, respectively. Attempts were made to present bonding information and make assignments on the absorption bands of dickite in the Far-IR region. Dickites contain a small proportions or kaolinite or nacrite layers. FTIR can be used as a potential tool for characterizing the presence of mixed-layer with different polytypes of the kaolin minerals. There is no clear relationship between Hinckley index and crystallinity of dickite. Although pyrophyllite shows a strong OH stretching band at 3673-3676 $cm^{-1}$ / corresponding to an inner hydroxyl group, the weak band at $3645-3648 cm^{-1}$ seems to be due to the symmetric vibration if the symmetry of the structure is not ideal, probably due to the presence of trace Fe or mixture phases of 1Tc and 2M polytypes.

• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.27-30
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• 2015

SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

• Journal of Photoscience
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• v.6 no.4
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• pp.183-186
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• 1999

We have been prepared the porous silicon carbide (PSC) by electrochemical etching of silicon carbide single crystals. Samples of PSC have been studied by the methods of scanning electron microscope (SEM) and photoluminescence (PL). Two PL bands attributed to the blue and green light emission were observed in this study. According to the anodization conditions, the main source of emission in the oxidized layers of PSC lies in the different surface defect centers which consist of different geometrical structures due to the polytypes. It means that origin of these PL bands may be existed in different size pores simultaneously. The present results indicate that the high energy band comes from the top porous layers while the low energy band comes from the lower porous layers.

• Economic and Environmental Geology
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• v.29 no.4
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• pp.471-481
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• 1996

Clay mineral geothermometry using sericites and chlorites in Bobae sericite mine reveals that these clay minerals formed at relatively high temperature. It appears that sericites formed at around $200{\sim}350^{\circ}C$ and chlorites formed at around $250^{\circ}C$. X-ray diffraction study of these minerals reveals that sericite $2M_1$ type and chlorite IIb type are dominant phases. Both polytypes indicate that the precipitation temperatures of these minerals shows fairly good agreement with the estimated temperature by clay mineral geothermometry. The Bobae sericite mine was formed at relatively higher temperature than several non-metal ore deposits occurred in the southern part of Korea.

• Economic and Environmental Geology
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• v.29 no.4
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• pp.447-454
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• 1996

Clay mineral geothermometry using sericites and chlorites in Bobae sericite mine reveals that these clay minerals formed at relatively high temperature. It appears that sericites formed at around $200{\sim}350^{\circ}C$ and chlorites formed at around $250^{\circ}C$. X-ray diffraction study of these minerals reveals that sericite 2M, type and chlorite lib type are dominant phases. Both polytypes indicate that the precipitation temperatures of these minerals shows fairly good agreement with the estimated temperature by clay mineral geothermometry. The Bobae sericite mine was formed at relatively higher temperature than several non-metal ore deposits occurred in the southern part of Korea.

• Journal of the Mineralogical Society of Korea
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• v.11 no.2
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• pp.69-84
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• 1998

The Daehyun sericite deposit in socheon-myun, Bongwha-gun, Kyungsangbuk-do, Korea, has been formed by the hydrothermal alteration of the Hongjesa granite of Precambrian age, leaving the muscovite granite between ore body and the Hongjesa granite as the wall rock alteration zone. The process of sericitization of granitic rock as well as chemistry and structures of sericites were studied using polarizing microscope, X-ray diffractometer (XRD), electron probe microanalyzer (EPMA) and high resolution transmission electron microscope (HRTEM). There are two genetic types of sericites having different chemistry and structure. The early sericite is of 2M1 polytype and has octahedral composition close to muscovite. It has been formed from the primary muscovite, tourmaline and quartz under a relatively high temperature. The late sericite is of 1M, 2M1 and 3T polytypes and has phengitic composition. It has been formed form feldspar, biotite, muscovite and tourmaline under a relatively low temperature. Chemical analyses show t, the early sericite has less Mg+FeT content and lower Si/AlIV ratio in tetrahedral site than the late sericite.

• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.152-156
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• 1996

Fine (~0.09 $\mu$m) $\beta$-SiC Powders with 3.3wt% of large (~0.44$\mu$m) $\alpha$-SiC of $\beta$-SiC particles (seeds) added were hotpressed at 175$0^{\circ}C$ using $Y_2O_3$, $Al_2O_3$ and CaO as sintering aids and then annealed at 185$0^{\circ}C$ for 4 h to enhance grain growth. The resultant microstructure and polytypes were analyzed by high resolution electron microscopy (HREM).Growth of $\beta$-SiC with high density of microtwins and formation of ${\alpha}/{\beta}$ composite grains consisting of $\alpha$-SiC domain sandwiched between $\beta$-SiC domains were found in both specimens. When large $\alpha$-SiC (mostly 6H) seeds were added, the $\beta$-SiC transformend preferentially to the 6H polytype. In contrast, when large $\beta$-SiC (3C) seeds were added, the fine $\beta$-SiC transformed preferentially to the 4H polytype. Such results suggested that the polytype formation in SiC was influenced by crystalline form of seeds added as well as the chemistry of sintering aids. The ${\alpha}/{\beta}$ interface played and important role in the formation of elongated grains as evidenced by presence of ${\alpha}/{\beta}$ composite grains with high aspect ratio.