• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.232-232
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• 2006

SiC single crystal Ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of $2{\mu}m/h$ N-type 2"-SIC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below $10^{17}/cm^3$ were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal Ingot grown on new SiC Seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.222-226
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• 2008

With different seed adhesion methods, we obtained two different aspects with or without micro-bubble in the interface between a seed and a dense graphite seed holder. To improve the quality of SiC wafer, we introduced a sucrose caramelizing step at the seed adhesion using the sucrose, The n-type 2 inch single crystal exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of about $10^{16}/cm^3$ was determined from Hall measurements, As compared to the characteristics of SiC crystal grown with micro-bubble in the interface between the seed and the dense graphite seed holder, the SiC crystal grown without micro-bubble definitely exhibited lower resistivity, lower micropipe density and higher mobility relatively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.326-326
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• 2012

ZnS를 합성하는 방법 중 thioacetamide (TAA)를 녹인 물에 ZnO template를 넣어서 황화시키는 방법이 있다. 이 방법은 실험과정이 간편할 뿐만 아니라 그 반응양의 조절도 용이해 ZnS-ZnO core-shell 구조나 ZnS hollow 구조 등을 만드는데 널리 사용되고 있다. 그러나 다양한 형태의 ZnS 구조체 합성에 관한 연구는 활발한 반면, ZnS의 상형성 과정이나 구조 변화와 같은 ZnO의 황화 과정 기구에 관한 연구는 매우 미비한 실정이다. ZnS는 기본적으로 저온에서는 cubic sphalerite 구조를, 고온에서는 hexagonal wurtzite 구조를 안정상으로 가진다. 또한, 8H나 15R 등과 같은 다양한 polytype 구조도 존재한다. 그러나 다양한 구조에서 비슷한 면간거리가 존재하기 때문에 결정구조의 분석이 어려운 실정이다. 이러한 비슷한 면간거리를 가지는 ZnS 등의 결정구조 분석에 있어 원자배열을 직접적으로 관찰할 수 있는 투과전자현미경 (TEM, transmission electron microscopye)을 이용한 연구는 큰 강점을 가진다. 본 연구에서는 다공성 ZnO 막을 황화시켜 형성된 ZnS 막의 미세구조 특성을 분석하였다. 다공성 ZnO 막은 패턴된 Si (111) 기판 위에 스핀코팅법을 이용하여 4,000 rpm의 속도로 증착되었으며 ZnO 결정화를 위해 150 도와 500도에서 각각 drying과 후열처리를 수행하였다. 이렇게 만들어진 ZnO 막을 TAA를 녹인 물에 넣어 48 시간 동안 반응시켰고 최종적으로 ZnS 막을 생성하였다. 다공성 ZnS 막의 미세구조를 분석하기 위해 주사전자현미경 (SEM, scanning electron microscope), X-선 회절분석기 (XRD, x-ray diffractometer), 그리고 투과전자현미경을 이용하였으며, 정확한 결정구조 분석을 위하여 결정구조 시뮬레이션을 병행하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.61-64
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• 2010

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with $0.1-0.2\;{\mu}m$ and $1-10\;{\mu}m$, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about $10^{17}\;cm^3$ were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.

• 한국광물학회지
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• 제13권4호
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• pp.196-204
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• 2000

We present characteristics of hydrothermal chlorite and its interstratification with 7-$\AA$ mineral phase that occur in the propylitic alteration zone of the Bobae sericite deposit formed in rhyodacitic tuff. Chlorite is found as disseminated fine-grained aggregate or replacement materials of precursor minerals such as Fe-oxides and amphibole. Based on X-ray diffraction(XRD), all chlorites belong to IIb polytype and the (060) reflections averaging $1.53~1.54\AA$ indicate a trioctahedral structure. Chemical compositions of chlorite show that the Fe/(Fe+Mg) values are mostly in the range of 0.44~0.53, and cation deficiencies in octahedral sites range from 0.06 to 0.37. Under scanning electron microscope(SEM) chlorite occurs as well-crystallized aggregates and is subparallely stacked in interstices or between grain boundaries of associated minerals. transmission electron microscopic(TEM) images reveal that chlorite shows regular layers with $14-\AA$ spacings, locally interstratified with $7-\AA$ or $21-\AA$ periodicities. The $21- \AA$ periodicity corresponds to the sum of the $d_{001}$ values of chlorite and $7-\AA$ phase. The chlorite packet coexisting with 7-$\AA$ layers displays abundant defects such as edge dislocations and layer terminations. Selected-area electron diffraction(SAED) indicates that chlorite and $7-\AA$ phase are randomly interstratified in the mixed-layer areas. We propose a lateral change of layers for the polymorphic transition of $7-\AA$ phase to chlorite.e.

• 한국세라믹학회지
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• 제48권5호
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• pp.360-367
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• 2011

Macroporous silicon carbide (SiC) ceramics were fabricated by powder processing and polymer processing using carbon-filled polysiloxane as a precursor. The effects of the starting SiC polytype, template type, and template content on porosity and flexural strength of macroporous SiC ceramics were investigated. The ${\beta}$-SiC powder as a starting material or a filler led to higher porosity than ${\alpha}$-SiC powder, owing to the impingement of growing ${\alpha}$-SiC grains, which were transformed from ${\beta}$-SiC during sintering. Typical flexural strength of powder-processed macroporous SiC ceramics fabricated from ${\alpha}$-SiC starting powder and polymer microbeads was 127 MPa at 29% porosity. In contrast, that of polymer-processed macroporous SiC ceramics fabricated from carbon-filled polysiloxane, ${\beta}$-SiC fillers, and hollow microspheres was 116MPa at 29% porosity. The combination of ${\alpha}$-SiC starting powder and a fairly large amount (10 wt%) of $Al_2O_3-Y_2O_3$ additives led to macroporous SiC ceramics with excellent flexural strength.

• 한국결정성장학회지
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• 제30권5호
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• pp.163-167
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• 2020

본 연구에서는 PVT(Physical Vapor Transport) 방법을 이용하여 반도체 식각 공정용 소재로 사용되는 링 모양의 SiC(Silicon carbide) 다결정을 제조하였다. 흑연 도가니 내부에 원기둥 모양의 흑연 구조물을 배치하여 PVT법에 의한 링 모양의 SiC 다결정을 성장시켰다. 성장된 결정은 Raman 및 UVF(Ultra Violet Fluorescence) 분석을 이용하여 결정의 상분석을 하였고, SEM(Scanning Electron Microscope), EDS(Energy Dispersive Spectroscopy) 분석을 통해 미세조직 및 성분을 확인하였다. PVT 성장 초기의 온도변화를 통하여 SiC 다결정의 결정립 크기와 성장 속도를 조절할 수 있었다.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.673-679
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• 2006

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. In this study, SiC crystal boules were prepared with different angles in trapezoid-shaped graphite seed holders using sublimation physical vapor transport technique (PVT) and then their crystal quality was systematically investigated. The temperature distribution in the growth system and the crystal shape were varied with angles in trapezoid-shaped graphite seed holders, which was successfully simulated using 'Virtual Reactor'. The SiC polytype proved to be the n-type 6H-SiC from the typical absorption spectrum of SiC crystal. The micropipe densities of SiC wafers in this study were measured to be < $100/cm^2$. Consequently, SiC single crystal with large diameter was successfully achieved with changing angle in trapezoid-shaped graphite seed holders.

• 한국결정성장학회지
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• 제4권4호
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• pp.336-346
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• 1994

용융 silicon과 carbon 입자가 어떠한 반응관계를 나타내는가를 알아보기 위하여 sili-con만으로 된 powder와 silicon에 carbon을 0.2wt%의 비율로 혼합한 powder와 silicon에 carbon을 0.2wt%의 비율로 혼합한 powder를 silicon의 용융점 이사의 고온인 $1450^{\circ}C, 1550^{\circ}C, 1650^{\circ}C, 1700^{\circ}C$에서 각각 1시간, 4시간을 유지시킨 다음 quenching시켜 각각의 조건에 따른 반응의 정도 및 상의 분포와 morphology의 분석을 통해 melt sili-con의 morphology 변화,carbon이 함유된 silicon의 조건에 따른 물성변화 및 SiC의 형성여부를 조사하기 위하여 광학현미경과 SEM, XRD등을 이용하여 시편의 미세구조 및 결정화 양상을 관찰하였다. 용융점 이상의 온도에서 quartz는 연화하여 분해반응을 일으켜 산소를 내놓고 이것이 silicon과 결합하여 SiO로써 기체상태로 휘발하게 되어 silicon melt에 산소침투로 인항 표면결함을 형성하며, liquid silicon속에 용융되어 있던 carbonrhk 불순물로써 grain boundary를 따라 존재 하고 있는 미반응의 carbon이 용융상태 silicon과 반응하여 SiC를 형성한다. SiC 결정은 고화계 면에서 발생하게 되며 생성되는 결정은 ${\alpha}-SiC$이었다.