• Transactions on Electrical and Electronic Materials
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• 제1권2호
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• pp.1-6
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• 2000

This article presents the experiments and considerations possible about gate etching in polysilicon when oxygen gas is added in chamber, We propose the novel study with optical emission spectroscopy in polysilicon etching. It is shown that added oxygen gases play an important role in enhencement of density in chlorine gases as a scavenger of silicon from SiCl$\_$x/. And a small amount of Si-O bonds are deposited and then the deposited thin film protect silicon dioxyde against reaction chlorine with silicon in SiO$_2$. Consequently, we can improve the selectivity of polysilicon the silicon dioxide, which is clearly explained in this model.

• 한국재료학회지
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• 제5권2호
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• pp.203-207
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• 1995

Polysilicon this film transistors (poly-Si TFTs) with different channel dimensions were fabricated on low-temperature crystalized amorphous silicon films and on as-deposited polysilicon films. The electrical characteristics of these TFTs were characterized and compared. The performance of the TFTs fabricated on the solid-phase crystalized amophous silicon films ws showon to be superior to that of the TFTs fabricated on the as-deposited polysilicon films. It was found that the performance of poly-Si TFTs depends strongly on the material characteristics of the polysilicon films used as the active layers, but only weakly on the channel dimensions.

• 한국가스학회지
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• 제22권4호
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• pp.55-62
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• 2018

지구온난화로 인하여 태양광 발전에 대한 관심이 커지고 있다. 이에 따라 태양전지를 만드는 핵심물질인 폴리실리콘의 수요도 나날이 증가하고 있으며 시장이 커짐에 따라 생산공정에서 크고 작은 사고들이 발생하고 있다. 그 예로 2013년 상주시의 폴리실리콘 제조공장에서 염산이 누출되었고 2014년에는 여수시의 폴리실리콘 제조공장에서 화재가 발생하였으며, 2015년에는 군산시의 폴리실리콘 제조공장에서 STC(Silicon Tetrachloride)가 누출되었다. 이러한 누출 사고들은 사업장 내부에만 영향을 주는 것이 아니라 인근지역까지 영향을 줄 수 있다는 것이 특징이다. 따라서 본 연구에서는 폴리실리콘 제조공정에서 사용되는 위험물질을 파악하고, 최악의 누출 시나리오를 적용했을 때 누출량과 피해범위를 정량적으로 예측하였다. 그 결과 폭발에 따른 피해거리는 726 m로 예측되었고, 독성에 대한 피해거리는 4,500 m로 예측되었다. 그리고 TCS(Trichlorosilane), STC(Silicon Tetrachloride), DCS(Dichlorosilane)가 누출되어 공기 중의 수분과 반응하여 HCl이 생성될 경우 피해거리는 최대 5.7 km까지로 예측되었다.

• Korean Chemical Engineering Research
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• 제46권1호
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• pp.37-49
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• 2008

태양전지 기판의 원료인 폴리실리콘의 공급부족은 태양광발전산업의 비약적인 발전에 있어 최대 걸림돌이 되고 있다. 태양전지 제조에 충분한 순도로 폴리실리콘을 값싸게 제조할 수 있게 하는 공정기술의 개발은 태양광발전의 가격 경쟁력과 활용범위를 크게 증가시키는 중요한 계기가 될 수 있다. 본 총설에서는 태양전지용 폴리실리콘 제조를 위해 현재 이용 가능한 기술들을 정리해보고, 최근에 주목받고 있는 유동층 석출공정기술과 관련하여 응용범위 확대를 가로막고 있는 주요 기술적 장애요인에 대하여 중점적으로 소개하고자 한다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.725-730
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• 1996

The key process in silicon surface micromachining is the selective etching of a sacrificial layer to release the silicon microstructure. The newly developed anhydrous HF/$CH_3$OH gas phase etching of TEOS (teraethylorthosilicate) sacrificial layers onto the polysilicon and the nitride substrates was employed to release the polysilicon microstructures. A residual product after TEOS etching onto the nitride substrate was observed on the surface, since a SiOxNy layer is formed on the TEOS/nitride interface. The polysilicon microstructures are stuck to the underlying substrate because SiOxNy layer does not vaporize. We found that the only sacrificial etching without any residual product and stiction is TEOS etching onto the polysilicon substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.152-153
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• 1994

A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.342-344
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• 1995

Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.31-36
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• 2004

본 논문에서는 UV 처리와 BOE 세정을 이용하여 레이저 어닐링 전의 실리콘 표면에 자연 산화막을 제거하여 다결정 실리콘 TFT의 신뢰성을 향상시키는 방법을 제안하였다. 전처리 공정이 다결정 실리콘의 표면 거칠기에 미치는 영향을 AFM으로 측정하였으며, 다결정 실리콘 TFT의 전기적 특성인 스위칭 특성과 항복특성을 대형 유리기판의 위치와 전처리의 유무에 대해서 조사하였다.

• 전자공학회논문지A
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• 제29A권4호
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• pp.28-32
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• 1992

The electrical properties of ONO interpoly dielectrics grown by polycrystalline silicon have been studied. The polysilicon layer deposited as amorphous state kept its surface smoothness even after subsequent heat cycle induced crystallization. Polysilicon was doped with a POCl$_3$ and arsenic ion implantation. Arsenic was implanted in several different doses. The effective barrier heights calculated from F-N plotting method and breakdown fields increased as the polysilicon doping concentration increased. On the other hand they mere degraded when arsenic concentration in polysilicon exceeded 2{\times}10^{20}[cm^{-3}]$. The reliability of dielectric as monitored by TDDB infant fail and breakdown field showed increasing degradation as doping concentration increased

• Transactions on Electrical and Electronic Materials
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• 제18권6호
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• pp.316-319
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• 2017

A new approach to improving the electrical characteristics and optical response of a polysilicon-based metal-semiconductor-metal (MSM) photodetector is proposed. To understand the cause of current restriction in the MSM photodetector, modified trap mechanisms are suggested, which include interfacial electron traps at the metal/polysilicon interface and silicon dangling bonds between silicon crystallite grains. Those traps were passivated using hydrogen ion implantation with subsequent post-annealing. Photodetectors that were ion-implanted under optima conditions exhibited improved photoconductivity and reduced dark current instability, implying that the hydrogen bonds in the polysilicon influence the simultaneous decreases in the density of dangling bonds at grain boundaries and the trapped positive charges at the contact interface.