• 제목/요약/키워드: polymer resist

검색결과 84건 처리시간 0.029초

Condensation of Nano-Size Polymer Aggregates by Spin Drying

  • Ishikawa, Atsushi;Kawai, Akira
    • 접착 및 계면
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    • 제6권1호
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    • pp.7-10
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    • 2005
  • Condensation control of nano-particles has become important in order to fabricate minute condensed structures. In this study, we focus our attention on condensation mechanism of polymer aggregates in a resist film. The polymer aggregate is structural component of a resist material which is used in lithography process. The condensation nature of polymer aggregates in the resist film surface is observed by using atomic force microscope (AFM). By using the AFM, the condensation of polymer aggregates can be observed clearly. The condensation of polymer aggregate strongly affects to precise fabrication of resist pattern below 100nm size. The interaction force among polymer aggregates can be analyzed based on Derjaguin approximation. We also discuss about condensation nature of polymer aggregates in the resist film surface with the help of micro sphere model.

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Stress Analysis in Cooling Process for Thermal Nanoimprint Lithography with Imprinting Temperature and Residual Layer Thickness of Polymer Resist

  • Kim, Nam Woong;Kim, Kug Weon
    • 반도체디스플레이기술학회지
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    • 제16권4호
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    • pp.68-74
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    • 2017
  • Nanoimprint lithography (NIL) is a next generation technology for fabrication of micrometer and nanometer scale patterns. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Up to now there have been a lot of researches on thermal NIL, but most of them have been focused on polymer deformation in the molding process and there are very few studies on the cooling and demolding process. In this paper a cooling process of the polymer resist in thermal NIL is analyzed with finite element method. The modeling of cooling process for mold, polymer resist and substrate is developed. And the cooling process is numerically investigated with the effects of imprinting temperature and residual layer thickness of polymer resist on stress distribution of the polymer resist. The results show that the lower imprinting temperature, the higher the maximum von Mises stress and that the thicker the residual layer, the greater maximum von Mises stress.

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Fine Line Lithography를 위한 Polymer Resist에 관한 연구 (Studies on Polymer Resist for Fine Line Lithography)

  • 박이순
    • 한국인쇄학회지
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    • 제11권1호
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    • pp.71-84
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    • 1993
  • Practically to put use high-photosensitive polymer, poly(vinyl cinnamoyl acetate), we investigated and confirmed UCHIDA`s synthesis, according to control solvent, which is the esterification of poly (vinyl alcohol) with monochloroacetic acid and can be freely conrolled the successive cinnamoyl acetoxyl esterfication of PVCiA, and intruducing photosensitizers,studied the photosensitivity of PVCiA.

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I-Line과 DUV Resist에서 Poly-Si 플라즈마 식각시 미치는 개스의 영향 (Effects of Gas Chemistries on Poly-Si Plasma Etching with I-Line and DUV Resist)

  • 신기수;김재영
    • 한국진공학회지
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    • 제7권2호
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    • pp.155-160
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    • 1998
  • 256M DRAM급에 해당하는 0.25$\mu\textrm{m}$의 회로선 폭을 가공하기 위해 Arc layer & DUV resist 사용이 필수적이다. Poly-Si 식각시 Arc layer 적용여부 및 resist 종류에 따른 차이 를 TCP-9408 etcher(Lam Research Co.)에서 $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr 3가지 gas chemistry 를 변화시키면서 조사하였다. 동일한 식각 조건에서 DUV resist사용의 경우에 I-line resist 에 비해 식각 profile이 profile이 positive하고 CD gain도 크게 나왔다. 이것은 resist손실에 의한 polymer생성의 증가가 식각시 측벽 보호막을 강화시키기 때문이다. Arc layer 적용의 경우 Arc layer 식각시 생기는 fluorine계 polymer가 poly-Si 식각시 mask역할을 하므로 CD gain이 증가하는 것으로 나타났다. Gas chemistry에 의한 영향은 $Cl_2/O_2$의 경우가 식각 시 polymer형성을 촉진시켜 positive profile 및 CD gain을 초래하였다. $Cl_2$/HBr의 경우에는 profile이 vertical 하였고 CD gain도 거의 없었다. 또한 dense pattern 과 isolated pattern 사이의 profile 및 CD 차이도 가정 작게 나타났다. HBr gas 사용이 식각시 pattern density 에 따른 측벽 보호막 형성의 불균일성을 최소화 시켜 양호한 특성을 보여주었다.

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유기 저항막을 이용한 원자힘 현미경 양극산화 패터닝 기술 (Anodic Oxidation Lithography via Atomic Force Microscope on Organic Resist Layers)

  • 김성경;이해원
    • 폴리머
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    • 제30권3호
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    • pp.187-195
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    • 2006
  • 원자힘 현미경 양극산화 패터닝 기술에 관한 연구를 유기 저항막의 종류 및 그들의 특성을 토대로 다루었다. 본 연구실에서 수행한 자기조립막, 랑뮈어-블라짓막, 고분자막 위에서의 원자힘 현미경 양극산화 패터닝에 대한 연구결과를 중심으로, 유기 저항막 위에서의 원자힘 현미경 양극산화 패터닝 기술에 대한 이해를 돕고자 하였다. 현실적인 공정 속도에서 높은 종횡비의 패턴을 형성하기 위해 원자힘 현미경 양극산화 패터닝에 유기 저항막의 전기-기계적 특성, 젖음 특성, 에칭 저항 특성 등이 중요한 인자들임을 제안하였다.

저온 나노임프린트 공정에서 압력과 폴리머 레지스트 초기 두께의 영향 (Effect of Pressure and Initial Polymer Resist Thickness on Low Temperature Nanoimprint Lithography)

  • 김남웅;김국원;신효철
    • 한국공작기계학회논문집
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    • 제18권1호
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    • pp.68-75
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    • 2009
  • A major disadvantage of thermal nanoimprint lithography(NIL) is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to make the processing temperature lower Accordingly, it is necessary to determine the effects on the processing parameters for thermal NIL at reduced temperatures and to optimize the parameters. This starts with a clear understanding of polymer material behavior during the NIL process. In this work, the squeezing and filling of thin polymer films into nanocavities during the low temperature thermal NIL have been investigated based upon a two-dimensional viscoelastic finite element analysis in order to understand how the process conditions affect a pattern quality; Pressure and initial polymer resist thickness dependency of cavity filling behaviors has been investigated.

나노임프린트 리소그래피에서의 폴리머 레지스트의 변형에 관한 분자 동역학 시뮬레이션 (Molecular Dynamics Simulation of Deformation of Polymer Resist in Nanoimpirnt Lithography)

  • 강지훈;김광섭;김경웅
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 추계학술대회
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    • pp.410-415
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    • 2004
  • Molecular dynamics simulations of nanoimprint lithography in which a stamp with patterns is pressed onto amorphous poly-(methylmethacrylate) (PMMA) surface are performed to study the deformation of polymer. Force fields including bond, angle, torsion, inversion, van der Waals and electrostatic potential are used to describe the intermolecular and intramolecular force of PMMA molecules and stamp. Periodic boundary condition is used in horizontal direction and $Nos\acute{e}$-Hoover thermostat is used to control the system temperature. As the simulation results, the adhesion forces between stamp and polymer are calculated and the mechanism of deformation are investigated. The effects of the adhesion force and friction force on the polymer deformation are also studied to analyze the pattern transfer in nanoimprint lithography. The mechanism of polymer deformation is investigated by means of inspecting the indentation process, molecular configurational properties, and molecular configurational energies.

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분자동역학기법을 이용한 나노 임프린트 리소그래피 공정에서의 고분자 변형모사 (Deformation of Polymer Resist in NIL Process by Molecular Dynamic Simulation)

  • 우영석;이우일
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2007년도 춘계학술대회A
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    • pp.337-342
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    • 2007
  • In this study, molecular dynamics simulation of nano imprint lithography in which patterned stamp is pressed onto amorphous polyethylene(PE) surface are performed to study the behaviour of polymer. Force fields including bond, angle, torsion, and Lennard Jones potential are used to describe the inter-molecular and intra-molecular force of PE molecules and stamp, substrate. Periodic boundary condition is used in horizontal direction and canonical NVT ensemble is used to control the system temperature. As the simulation results, the behaviour of polymer is investigated during the imprinting process. The mechanism of polymer deformation is studied by means of inspecting the surface shape, volume, density, atom distribution. Deformation of the polymer resist was found for various of the stamp geometry and the alignment state of the polymer molecules.

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나노임프린트 리소그래피에서의 폴리머 레지스트의 변형에 관한 분자 동역학 시뮬레이션 (Molecular Dynamics Simulation of Deformation of Polymer Resist in Nanoimpirnt Lithography)

  • 김광섭;김경웅;강지훈
    • 대한기계학회논문집A
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    • 제29권6호
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    • pp.852-859
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    • 2005
  • Molecular dynamics simulations of nanoimprint lithography in which a stamp with patterns is pressed onto amorphous poly-(methylmethacrylate) (PMMA) surface are performed to study the deformation of polymer. Force fields including bond, angle, torsion, inversion, van der Waals and electrostatic potential are used to describe the intermolecular and intramolecular force of PMMA molecules and stamp. Periodic boundary condition is used in horizontal direction and Nose-Hoover thermostat is used to control the system temperature. As the simulation results, the adhesion forces between stamp and polymer are calculated and the mechanism of deformation are investigated. The effects of the adhesion and friction forces on the polymer deformation are also studied to analyze the pattern transfer in nanoimprint lithography. The mechanism of polymer deformation is investigated by means of inspecting the indentation process, molecular configurational properties, and molecular configurational energies.

극자외선 리소그래피용 화학증폭형 레지스트 (Chemically Amplified Resist for Extreme UV Lithography)

  • 최재학;노영창;홍성권
    • 공업화학
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    • 제17권2호
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    • pp.158-162
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    • 2006
  • 새로운 극자외선 리소그래피용 화학증폭형 레지스트의 매트릭스 수지로 poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate]를 합성하고 평가하였다. 이 중합체로 제조된 레지스트로 KrF 엑시머 레이저 노광장비를 사용하여 선폭 120 nm (피치 240 nm)를 구현할 수 있었다. 극자외선 리소그래피 장비를 이용하여 평가한 결과 선폭 50 nm (피치 180 nm)의 포지형 패턴을 얻었다. $CF_{4}$ 플라즈마를 이용한 건식에칭내성 평가 결과 기존 원자외선 레지스트용 매트릭스 수지인 poly(4-hydroxystyrene)보다 약 10% 향상되었다.