• Journal of Adhesion and Interface
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• v.6 no.1
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• pp.7-10
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• 2005

Condensation control of nano-particles has become important in order to fabricate minute condensed structures. In this study, we focus our attention on condensation mechanism of polymer aggregates in a resist film. The polymer aggregate is structural component of a resist material which is used in lithography process. The condensation nature of polymer aggregates in the resist film surface is observed by using atomic force microscope (AFM). By using the AFM, the condensation of polymer aggregates can be observed clearly. The condensation of polymer aggregate strongly affects to precise fabrication of resist pattern below 100nm size. The interaction force among polymer aggregates can be analyzed based on Derjaguin approximation. We also discuss about condensation nature of polymer aggregates in the resist film surface with the help of micro sphere model.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.68-74
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• 2017

Nanoimprint lithography (NIL) is a next generation technology for fabrication of micrometer and nanometer scale patterns. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Up to now there have been a lot of researches on thermal NIL, but most of them have been focused on polymer deformation in the molding process and there are very few studies on the cooling and demolding process. In this paper a cooling process of the polymer resist in thermal NIL is analyzed with finite element method. The modeling of cooling process for mold, polymer resist and substrate is developed. And the cooling process is numerically investigated with the effects of imprinting temperature and residual layer thickness of polymer resist on stress distribution of the polymer resist. The results show that the lower imprinting temperature, the higher the maximum von Mises stress and that the thicker the residual layer, the greater maximum von Mises stress.

• Journal of the Korean Graphic Arts Communication Society
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• v.11 no.1
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• pp.71-84
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• 1993

Practically to put use high-photosensitive polymer, poly(vinyl cinnamoyl acetate), we investigated and confirmed UCHIDA`s synthesis, according to control solvent, which is the esterification of poly (vinyl alcohol) with monochloroacetic acid and can be freely conrolled the successive cinnamoyl acetoxyl esterfication of PVCiA, and intruducing photosensitizers,studied the photosensitivity of PVCiA.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.155-160
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• 1998

It is necessary to use Arc layer and DUV resist to define 0.25 $\mu \textrm{m}$ line and space for 256 MDRAM devices. Poly-Si etching with Arc layer and different resists has been performed in a TCP-9408 etcher with variation of gas chemistries; $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr . DUV resist causes more positive etch profile and CD gain compared to I-line resist because the sidewall passivation is more stimulated by increasing polymerization through the loss of resist. When Arc layer is applied, CD hain also increases due to the polymeric mask formed after thching Arc layer. From the point of gas chemistry effects, the etch profile and CD gain is not improved using $Cl_2/O_2$ gas, since polymerization is accelerated in this gas. however, the vertical profile and less CD gain is obtained using $Cl_2$/HBr gas. Furthermore, HBr gas is very effective to suppress the difference of profile and CD variation between dense pattern and isolated pattern by minimizing non-uniformity of side wall passivation with pattern density.

• Polymer(Korea)
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• v.30 no.3
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• pp.187-195
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• 2006

Atomic force microscope (AFM)-based anodic oxidation lithography has gained great in forests in fabricating nanometer scale features on semiconductor or metal substrates beyond the limitation of optical lithography. In this article AFM anodic oxidation lithography and its organic resist layers are introduced based on our previous works. Organic resist layers of self-assembled monolayers, Langmuir-Blodgett films and polymer films aye suggested to play a key role in enhancing the aspect ratio of producing features, the lithographic speed, and spatial precision in AFM anodic oxidation lithography.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.18 no.1
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• pp.68-75
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• 2009

A major disadvantage of thermal nanoimprint lithography(NIL) is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to make the processing temperature lower Accordingly, it is necessary to determine the effects on the processing parameters for thermal NIL at reduced temperatures and to optimize the parameters. This starts with a clear understanding of polymer material behavior during the NIL process. In this work, the squeezing and filling of thin polymer films into nanocavities during the low temperature thermal NIL have been investigated based upon a two-dimensional viscoelastic finite element analysis in order to understand how the process conditions affect a pattern quality; Pressure and initial polymer resist thickness dependency of cavity filling behaviors has been investigated.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.410-415
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• 2004

Molecular dynamics simulations of nanoimprint lithography in which a stamp with patterns is pressed onto amorphous poly-(methylmethacrylate) (PMMA) surface are performed to study the deformation of polymer. Force fields including bond, angle, torsion, inversion, van der Waals and electrostatic potential are used to describe the intermolecular and intramolecular force of PMMA molecules and stamp. Periodic boundary condition is used in horizontal direction and $Nos\acute{e}$-Hoover thermostat is used to control the system temperature. As the simulation results, the adhesion forces between stamp and polymer are calculated and the mechanism of deformation are investigated. The effects of the adhesion force and friction force on the polymer deformation are also studied to analyze the pattern transfer in nanoimprint lithography. The mechanism of polymer deformation is investigated by means of inspecting the indentation process, molecular configurational properties, and molecular configurational energies.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.337-342
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• 2007

In this study, molecular dynamics simulation of nano imprint lithography in which patterned stamp is pressed onto amorphous polyethylene(PE) surface are performed to study the behaviour of polymer. Force fields including bond, angle, torsion, and Lennard Jones potential are used to describe the inter-molecular and intra-molecular force of PE molecules and stamp, substrate. Periodic boundary condition is used in horizontal direction and canonical NVT ensemble is used to control the system temperature. As the simulation results, the behaviour of polymer is investigated during the imprinting process. The mechanism of polymer deformation is studied by means of inspecting the surface shape, volume, density, atom distribution. Deformation of the polymer resist was found for various of the stamp geometry and the alignment state of the polymer molecules.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.6 s.237
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• pp.852-859
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• 2005

Molecular dynamics simulations of nanoimprint lithography in which a stamp with patterns is pressed onto amorphous poly-(methylmethacrylate) (PMMA) surface are performed to study the deformation of polymer. Force fields including bond, angle, torsion, inversion, van der Waals and electrostatic potential are used to describe the intermolecular and intramolecular force of PMMA molecules and stamp. Periodic boundary condition is used in horizontal direction and Nose-Hoover thermostat is used to control the system temperature. As the simulation results, the adhesion forces between stamp and polymer are calculated and the mechanism of deformation are investigated. The effects of the adhesion and friction forces on the polymer deformation are also studied to analyze the pattern transfer in nanoimprint lithography. The mechanism of polymer deformation is investigated by means of inspecting the indentation process, molecular configurational properties, and molecular configurational energies.

• Applied Chemistry for Engineering
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• v.17 no.2
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• pp.158-162
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• 2006

Poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate] was synthesized and evaluated as a matrix resin for extreme UV (EUV) chemically amplified resist. The resist system formulated with this polymer resolved 120 nm line and space (pitch 240 nm) positive patterns using a KrF excimer laser scanner (0.60 NA). The well defined 50 nm line positive patterns (pitch 180 nm) were obtained using an EUV lithography tool. The dry etching resistance of this resist for a $CF_{4}$-based plasma was 1.1 times better than that of poly(4-hydroxystyrene).