• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.124-125
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$ prepared from horizontal electric furnace. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$, obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - $(7.721{\times}10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy$({\Delta}cr)$ and the spin-orbit splitting energy$({\Delta}so)$ for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11^-}$ exciton peaks.

• The Journal of Advanced Prosthodontics
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• v.1 no.3
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• pp.113-117
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• 2009

STATEMENT OF PROBLEM. Recently Yttrium-stabilized tetragonal zirconia polycrystal (Y-TZP) has been introduced due to superior flexural strength and fracture toughness compared to other dental ceramic systems. Although zirconia has outstanding mechanical properties, the phenomenon of decrease in the life-time of zirconia resulted from degradation in flexural strength after low temperature aging has been reported. PURPOSE. The objective of this study was to investigate degradation of flexural strength of Y-TZP ceramics after various low temperature aging treatments and to evaluate the phase stability and micro-structural change after aging by using X-ray diffraction analysis and a scanning electron microscope (SEM). MATERIAL AND METHODS. Y-TZP blocks of Vita In-Ceram YZ (Vita Zahnfabrik, Bad $S\ddot{a}ckingen$, Germany) were prepared in 40 mm (length) $\times$ 4 mm (width) $\times$ 3 mm (height) samples. Specimens were artificially aged in distilled water by heat-treatment at a temperature of 75, 100, 125, 150, 175, 200, and $225^{\circ}C$ for 10 hours, in order to induce the phase transformation at the surface. To measure the mechanical property, the specimens were subjected to a four-point bending test using a universal testing machine (Instron model 3365; Instron, Canton, Mass, USA). In addition, X-ray diffraction analysis (DMAX 2500; Rigaku, Tokyo, Japan) and SEM (Hitachi s4700; Jeol Ltd, Tokyo, Japan) were performed to estimate the phase transformation. The statistical analysis was done using SAS 9.1.3 (SAS institute, USA). The flexural strength data of the experimental groups were analyzed by one-way analysis of variance and to detect statistically significant differences ($\alpha$= .05). RESULTS. The mean flexural strength of sintered Vita In-Ceram YZ without autoclaving was 798 MPa. When applied aging temperature at below $125^{\circ}C$ for 10 hours, the flexural strength of Vita In-Ceram YZ increased up to 1,161 MPa. However, at above $150^{\circ}C$, the flexural strength started to decrease. Although low temperature aging caused the tetragonal-to-monoclinic phase transformation related to temperature, the minimum flexural strength was above 700 MPa. CONCLUSION. The monoclinic phase started to appear after aging treatment above $100^{\circ}C$. With the higher aging temperature, the fraction of monoclinic phase increased. The ratio of monoclinic/tetragonal + monoclinic phase reached a plateau value, circa 75% above $175^{\circ}C$. The point of monoclinic concentration at which the flexural strength begins to decrease was between 12% and 54%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.179-186
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.