• Title/Summary/Keyword: polyQ

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Development of New LTPS Process

  • Yi, Chung;Park, Kyung-Min;Choi, Pil-Mo;Kim, Ung-Sik;Kim, Dong-Byum;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1024-1026
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    • 2004
  • We have developed the five mask $PMOS^1$ and the six mask CMOS process architecture for poly-Si TFT. In order to have a competitive process with that for a-Si TFT, the simple co-planar electrode structure whose data line electrode and pixel electrode are on the same plane was adopted. In addition, RGB + White four color $technology^2$ were applied to achieve high aperture ratio and transmittance. Using the aforementioned process architecture and four color technology, 2.0 inch qCIF transmissive micro-reflectance (TMR) device was successfully fabricated.

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Cerenkov type second harmonic genration in poled polymer waveguide (폴링된 폴리머 광도파로를 이용한 cerenkov형 제2고조파 생성)

  • 김응수;조원주
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.8
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    • pp.62-68
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    • 1998
  • Optical broadband second harmonic genration (SHG) in thin film waveguide structure was investigated. The copolymer poly(MMA-co-DR1MA) which was consiste dof PMMA (polymethylmethacrylate) and DR 1 (disperse red 1) was spin coated on the pyrex substrate. The green and near UV SHG were observe dfrom the fundamental beam even though the poled polymer has the absorption in second harmonic wavelength range. It was able to genrate SHG by cerenkov type phase matching. Th epoled polymer film thickness was decided by theoretical analysis. The green (532nm) and near UV SHG (370nm) were observed from the Q-switched Nd-YAG laser (1064nm) and Ti-sapphire laser (740nm). It was in good agreement with the experimental results.

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Partial Discharge Properties of PET Film with Carbon Black

  • Lee, Young-Hwan;Lee, Jong-Chan;Park, Yong-Sung;Park, Dae-Hee
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.1
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    • pp.1-4
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    • 2004
  • This paper presents an investigation of the phase-resolved partial discharge (PD) pattern of PET (Poly Ethylene Telephthalate) films with carbon black particles. The phase-resolved PD pattern and statistical parameter from PET samples according to the number of included semiconductor particles were measured. The measurement system consisted of a conventional PD detector using a digital signal processing technique. The partial discharge patterns of the PET films that include the semiconductor particles were investigated to simulate an actual situation that may exist in the cable. In addition, difference of PD patterns between semiconducting particles in PET films and artificial voids was studied. The relationship between the numbers of semiconductor particles in PET films was discussed through the difference of Ψ-q-n distribution and statistical analysis.

Tri-enzyme modified electrochemical biosensor for paracetamol detection (파라세타몰 검출을 위한 전기화학적 다중효소 바이오센서)

  • Park, Deog-Su;Shim, Yoon-Bo;Chang, Seung-Cheol
    • Journal of Sensor Science and Technology
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    • v.17 no.1
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    • pp.29-34
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    • 2008
  • A new disposable amperometric tri-enzyme biosensor for the detection of paracetamol has been developed. The paracetamol sensors developed uses horseradish peroxidase modified screen-printed carbon electrodes (HRP-SPCEs) coupled with immobilized enzymes, tyrosinase and aryl acylamidase, prepared using a poly (vinyl alcohol) bearing styrylpyridinium groups (PVA-SbQ) matrix. Optimization of the experimental parameters has been performed and the paracetamol biosensor showed detection limit for paracetamol is as low as $100{\mu}M$ and the sensitivity of the sensor is $1.46nA{\mu}M^{-1}cm^{-2}$.

Cloning, Expression and Purification of HIV-1 Reverse Transcriptase

  • Goo, Jae-Hwan;Park, Kwan-Yong
    • Proceedings of the Korean Society of Applied Pharmacology
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    • 1995.04a
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    • pp.76-76
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    • 1995
  • Virus-encoded HIV-1 reverse transcriptase (RTase) is one of the major targets for the development of drugs for HIV-1 since it is an essential enzyme-for the replication cycle of HIV-1. We cloned the entire reverse trancriptase gene into an inducible expression vector with tac promotor= RTase was stably overexpressed and induced by IPTG and the highly-expressed RTase was purified partially by use of DEAE cellulose and Mono Q column. The partially purified enzyme (663kDa, 51kDa) as exhibited by SDS-PAGE showed the high specific activity (16,570U/mg) when the assay for the RTase activity was carried out using $^3$H-dTTP and poly(rA): oligo(dT)12-18 as the substrate.

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Structure and Tissue Distribution of a Trinucleotide-Repeat-containing Gene (cag-3) Expressed Specifically in the Mouse Brain

  • Ji, Jin Woo;Yang, Hye Lim;Kim, Sun Jung
    • Molecules and Cells
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    • v.20 no.3
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    • pp.348-353
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    • 2005
  • Using in silico approaches and RACE we cloned a full length trinucleotide (CAG) repeat-containing cDNA (cag-3). The cDNA is 2478 bp long and the deduced polypeptide consists of 140 amino acids of which 73 are glutamines. The genomic sequence spans approximately 79 kb on mouse chromosome 7 and the gene is composed of four exons. Standard and real-time PCR analyses of several mouse tissues showed that the gene is exclusively expressed in the brain and is not detected in embryonic stages. Within the brain, it is expressed throughout the forebrain region with predominant expression in the hypothalamus and olfactory bulb and very low levels in the mid- and hindbrain.

Electrical Properties of MOS Capacitors and Transistors with in-situ doped Amorphous Si Gate (증착시 도핑된 비정질 Si 게이트를 갖는 MOS 캐패시터와 트랜지스터의 전기적 특성)

  • 이상돈;이현창;김재성;김봉렬
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.6
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    • pp.107-116
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    • 1994
  • In this paper, The electrical properties of MOS capacitors and transistoras with gate of in-situ doped amorphous Si and poly Si doped by POCI$_3$. Under constant current F-N stress, MOS capacitors with in-situ doped amorphous Si gate have shown the best resistance to degradation in reliabilty properties such as increase of leakage current, shift of gate voltage (V$_{g}$). shift of flat band voltage (V$_{fb}$) and charge to breakdown(Q$_{bd}$). Also, MOSFETs with in-situ doped amorphous Si gate have shown to have less degradation in transistor properties such as threshold voltage, transconductance and drain current. These improvements observed in MOS devices with in-situ doped amorphous Si gate is attributed to less local thinning spots at the gate/SiO$_2$ interface, caused by the large grain size and the smoothness of the surface at the gate/SiO$_2$ interface.

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Low Power and Small Area Source Driver Using Low Temperature Poly-Si(LTPS) Thin Film Transistors(TFTs) for Mobile Displays

  • Hong, Sueng-Kyun;Byun, Chun-Won;Yoon, Joong-Sun;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.833-836
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    • 2007
  • A low power and small area source driver using LTPS TFTs is proposed for mobile applications. This source driver adopts level shifter with holding latch function and new R-to-R type digital-to-analog converter (DAC). The power consumption and layout area of the proposed source driver are reduced by 23% and 25% for 16M colors and qVGA AM-OLED panel, respectively.

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Alizarin Red S modified electrochemical sensors for the detection of aluminum ion

  • Chang, Seung-Cheol
    • Journal of Sensor Science and Technology
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    • v.19 no.6
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    • pp.421-427
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    • 2010
  • Alizarin Red S modified screen printed carbon electrodes were developed for the electrochemical detection of aluminum ion. The electrodes developed use screen-printed carbon electrodes(SPCEs) coupled with chemical modification with an organic chelator, Alizarin Red S(ARS), for aluminum ion detection in aqueous solution. For sensor fabrication ARS was directly immobilized on the surface of SPCEs using PVA-SbQ(The poly(vinyl alcohol) bearing stryrylpyridinium groups). Aluminum concentrations were indirectly estimated by amperometric determination of the non-complexed ARS immobilized on the electrodes, after its complexation with aluminum. The sensitivity of the sensor developed was $3.8\;nA{\mu}M^{-1}cm^{-2}$ and the detection limit for aluminum was $25\;{\mu}M$.

Preparation of the SiO2 Films with Low-Dit by Low Temperature Oxidation Process (저온 산화공정에 의해 낮은 Dit를 갖는 실리콘 산화막의 제조)

  • Jeon, Bup-Ju;Jung, Il-Hyun
    • Applied Chemistry for Engineering
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    • v.9 no.7
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    • pp.990-997
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    • 1998
  • In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

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