• Journal of Information Display
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• v.11 no.1
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• pp.12-16
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• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• Knowledge Management Research
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• v.12 no.1
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• pp.39-52
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• 2011

Many LCD manufacturers continue to develop the technologies of LCD manufacturing processes for the reduction of production cost, power consumption and high-resolution. The LTPS (Low Temperature Polycrystalline Silicon) crystallization technology is important for rearranging the internal structure of liquid crystal grain by adding certain energy to amorphous silicon and turning it into poly-silicon in order to manufacture LCD with better performance. We consider 14 existing technologies of LTPS crystallization in the LCD manufacturing and present an intelligent analysis methodology using patent map and AHP (Analytic Hierarchy Process) analysis for determining an optimal LTPS crystallization technology. By using patent map analysis, we easily understand the development process and mega-trend of LTPS crystallization technologies and their relationship. By using AHP analysis, we evaluate 14 LTPS technologies. Through the use of proposed methodology, we determine the Continuous Wave Laser Lateral Crystallization technology as an optimal one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.100-104
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• 2003

$BaTiO_3$ ceramic thin films were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.135-139
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• 2005

Thin films of $BaTiO_3$ system were prepared by radio frequency(rf)/dc magnetron sputtering method. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C}$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.

• Macromolecular Research
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• v.12 no.5
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• pp.459-465
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• 2004

We have synthesized poly(l,4-cyclohexylenedimethylene terephthalate-co-hexamethylene terephthalate) [P(CT-co-HT)] random copolymers having various comonomer contents, from 0 to 100 mol% HT, by melt-condensation and have investigated their crystallization behavior by using differential scanning calorimetry (DSC) and wide-angle X-ray diffraction (WAXD). We observed that P(CT-co-HT)s exhibit clear melting and crystallization peaks in their DSC thermograms and sharp diffraction peaks in their WAXD patterns for all of their copolymer compositions as a result of cocrystallization of the CT and HT units, even though the copolymers are statistically random copolymers. When we plotted the melting and crystallization temperatures of P(CT-co-HT)s and the d-spacings of all the reflections against the copolymer composition, we observed a eutectic point at ca. 80 mol% HT, which suggests that a crystal transition occured from a PCT-type crystal to a PHT-type crystal. Both the DSC and WAXD results support the notion that P(CT-co-HT) copolymers undergo an isodimorphic cocrystallization.

• Korea-Australia Rheology Journal
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• v.12 no.2
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• pp.101-105
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• 2000

The crystallization behavior of homo polypropylene (PP) and PP in the PP-poly($\varepsilon$-caprolactone) (PCL) blends during isothermal crystallization has been investigated using differential scanning calorimeter (DSC) and advanced rheometric expansion system (ARES). From the storage modulus data of the homo PP and PP-PCL blends during isothermal crystallization, the volume fraction of crystallized material ($X_t$) of the homo PP and PP in the PP-PCL blends was calculated using the various rheological models. The results of $X_t$ of the homo PP and PP in the PP-PCL blends from ARES measurement were compared with the results from DSC. The $X_t$ of the homo PP was found to be higher in the ARES measurement than in the DSC. The crystallization rate of the homo PP was found to be faster in the rheological measurements than in the thermal analysis. The $X_t$ of PP in the PP-PCL blends with various compositions was obtained from the thermal analysis and rheological measurements. The $X_t$ of PP in the PP-PCL blends obtained from the thermal analysis and rheological measurements are not consistent. This discrepancy of $X_t$ may be due to the morphological changes resulted from the different crystallization kinetics of PP in the PP-PCL blends.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Elastomers and Composites
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• v.49 no.1
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• pp.13-23
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• 2014

In this work, glycolide, L-lactide and ${\varepsilon}$-caprolactone monomers were polymerized into the triblock copolymers by two step polymerization method and their non-isothermal crystallization behaviors were studied by combination of modified Avrami and Ozawa formula for further analysis of their behaviors. The result showed that PGCLA21 gave the highest value for supercooling analysis and super cooling degree increased with L-lactide content. Crystallization velocity constant, however, showed no significant change. The result of cooling function in specific relative crystallization degree showed that the increase of L-lactide content made an effect on the more enhancement of crystallization velocity of the PGCLA than PGCL. The result of big logF(T) value with the L-lactide content above critical point for PGCLA41 and PGCLA21 showed that bigger cooling velocity needed to gain same crystal size compared with PGCL. This means that it gives negative effect in the increase of crystallization velocity.

• Elastomers and Composites
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• v.51 no.1
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• pp.56-62
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• 2016

The isothermal crystallization behaviors of blends of poly(ethylene naphthalate) (PEN) and a thermotropic liquid crystalline polymer (TLCP) were investigated by differential scanning calorimetry (DSC) as functions of crystallization temperature and blend composition. Avrami analyses were applied to obtain information on the crystal growth geometry and the factors controlling the rate of crystallization. The crystallization kinetics of the PEN/TLCP blends followed the Avrami equation up to a high degree of crystallization, regardless of crystallization temperature. The calculated Avrami exponents for PEN/TLCP revealed three-dimensional growth of the crystalline region in each blend. The crystallization rate of each blend increased as the crystallization temperature decreased, and decreased as the TLCP content increased. The crystallization of PEN in the blend was affected by the addition of TLCP, which acts as a nucleating agent.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.109-112
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• 2008

The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according transmission electron microscopy. JIC poly-Si exhibits an excellent uniformity with regards to the grain size. We report here the blanket crystallization of the large area using the $2^{nd}$ generation glass substrate.