• Title/Summary/Keyword: poly-crystallization

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Development of Rapid Thermal Processor for Large Glass LTPS Production

  • Kim, Hyoung-June;Shin, Dong-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.533-536
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    • 2006
  • VIATRON TECHNOLOGIES has developed Field-Enhanced Rapid Thermal Processor (FERTP) system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The FE-RTP allows the diverse process options including crystallization, thermal oxidation of gate oxides and fast pre-compactions. The process and equipment compatibility with a-Si TFT lines is able to provide a viable solution to produce poly-Si TFTs using a-Si TFT lines.

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Device Design Considerations and Uniformity Improvement for Low-Temperature Poly-Si TFTs Fabricated by Sequential Lateral Solidification Technology

  • Chu, Fang-Tsun;Shih, Ding-Kang;Chen, Hung-Tse;Yeh, Yung-Hui
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.509-512
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    • 2006
  • In this paper, we proposed the novel device and process design to enhance the uniformity of low-temperature poly-Si TFTs fabricated by sequential lateral solidification (SLS). The proposed design schemes can avert the conventional two-shot SLS process-induced issues. Moreover, different design considerations between conventional excimer laser crystallization and the SLS process were also proposed and discussed.

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Crystallization of amorphous silicon films below $450^{\circ}C$ by FALC ($450^{\circ}C$ 이하에서 FALC 공정에 의한 비정질 실리콘의 결정화)

  • 박경완;유정은;최덕균
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.4
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    • pp.210-214
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    • 2002
  • The crystallization behavior of amorphous silicon (a-Si) film was investigated by using Cu-field aided lateral crystallization (Cu-FALC) process below $450^{\circ}C$. The lateral crystallization was induced from the Cu deposited region outside of pattern toward the Cu-free region inside of the pattern by applying an electric field during heat treatment. As expected, the lateral crystallization toward Cu-free region proceeded from negative toward positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species in the reaction between Cu and Si. Even at the annealing temperature of $350^{\circ}C$, the large dendrite-shaped branches were formed in the crystallized region and the polarity in the lateral crystallization was clearly observed. Consequently, we could successfully crystallize the a-Si at the temperature as low as $350^{\circ}C$ by an electric field of 30 V/cm with fast crystallization velocity of 12 $\mu$m/h.

Thermal Properties of Copolyetherester/silica Nanocomposites

  • Baik, Doo-Hyun;Kim, Hae-Young;Kwon, Sun-Jin;Kwon, Myung-Hyun;Lee, Han-Sup;Youk, Ji-Ho;Seo, Seung-Won
    • Fibers and Polymers
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    • v.7 no.4
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    • pp.367-371
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    • 2006
  • Thermal properties of copolyetherester/silica nanocomposites were examined by using DSC and TGA. The segmented block copolyetheresters with various hard segment structures and hard segment contents (HSC) were synthesized and their silica nanocomposite films were prepared by solution casting method. The nano-sized fumed silica particles were found to act as a nucleating agent of the copolyetheresters. The nanocomposites always showed reduced degree of supercooling or faster crystallization than the corresponding copolyetheresters. The nanocomposites also showed increased hard segment crystallinity except HSC 35 sample which had short hard segment length. In case of 2GT [poly(ethylene terephthalate)] copolyetheresters, which were not developed commercially because of their low crystallization rate, the hard segment crystallinity increased considerably. The copolyetherester/silica nanocomposites showed better thermal stability than copolyetheresters.

Effect of Polymerization Procedure on Thermal and Mechanical Properties of Polyether Based Thermoplastic Polyurethanes

  • Kim, Seong-Geun;Lee, Dai-Soo
    • Macromolecular Research
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    • v.10 no.6
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    • pp.365-368
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    • 2002
  • Thermoplastic polyurethanes (TPUs) with different hard segment length has been prepared from a fixed molar ratio of poly(tetramethylene ether glycol), 4,4'-diphenylmethane diisocyanate, and 1,4-butanediol by different polymerization procedures. Results reveal that the on-set temperature of endotherms ( $T_{cc}$ ) due to the crystallization of hard segments by cooling the TPUs from melt and the peak temperature of endotherms due to the melting of hard segments ( $T_{mh}$ ) by heating the TPUs increased and levelled off with increasing the hard segment length of TPUs. It has also been observed that soft segment glass transition temperature ( $T_{gs}$ ) of TPU decreased slightly with increasing the hard segment length, which explains less mixing of soft segments and hard segments. In tensile measurement of TPUs, strain hardening is observed with increasing the hard segment length, which is attributed to the strain induced crystallization of soft segments.

Physical Properties of Poly(ethylene terephthalate)-Poly(1, 4-phenylene terephthalate) Copolyester (Poly (ethylene terephthalate)-Poly (1, 4-phenylene terephthalate) Copolyester의 물성)

  • Ahn, Tae Oan;Nam, Byeong Uk;Park, Jong-Yoon
    • Applied Chemistry for Engineering
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    • v.2 no.3
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    • pp.246-252
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    • 1991
  • Copolyesters (PEHT) of poly (ethylene terephthalate) (PET) and poly (1,4-phenylene terephthalate) (PHT) were synthesized by the solution polymerization with the PHT unit contents of less than 30 mol %, and their physical properties were studied. As the content of PHT unit in PEHT was increased, glass transition temperature, crystallization rate, thermal stability increased, whereas melting temperature decreased. When the PHT unit contents were 16.5 and 24.9 mol%, nematic mesophase was observed. Wide angle X-ray diffraction pattern showed the peaks originated from both PET unit and PHT unit.

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Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

  • Lee, Kwang-Jin;Kim, Doyeon;Choi, Duck-Kyun;Kim, Woo-Byoung
    • Korean Journal of Materials Research
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    • v.28 no.8
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    • pp.440-444
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    • 2018
  • An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from $9.43{\times}10^{-12}$ to $3.43{\times}10^{-12}$ A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

Sequence Distribution and Thermal Property of Poly(butylene glutarate-co-adipate-co-succinate-co-terephthalate) Copolyesters (Poly(butylene glutarate-co-adipate-co-succinate-co-terephthalate) 공중합체의 서열분포 및 열적성질)

  • Park, Sang Soon;Cho, Yoon;Kang, Hye Jung
    • Journal of the Korean Chemical Society
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    • v.43 no.6
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    • pp.682-690
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    • 1999
  • The quaternary random copolyesters of poly (butylene glutarate-co-adipate-co-succinate-co-terephthalate)(PBGAST) were synthesized and charaterized by $^1H-NMR$ spectrometry, DSC method, and X-ray diffractometry. Thus the melting point trends and crystallization behaviors of PBGAST copolyesters were obviously depended on terephthalate content in copolymers as well as reaction condition.

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