• 제목/요약/키워드: poly-crystallization

검색결과 321건 처리시간 0.031초

금속기판에서 재결정화된 규소 박막 트랜지스터 (Recrystallized poly-Si TFTs on metal substrate)

  • 이준신
    • E2M - 전기 전자와 첨단 소재
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    • 제9권1호
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    • pp.30-37
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    • 1996

  • Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

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Fabrication of the Poly-Si Thin Film Transistor on the Mica Substrate

  • Lee, Seung-Ryul;Lee, Jin-Ho;Ahn, Byung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1182-1184
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    • 2006

  • A mica has been introduced as a new substrate material for the fabrication of the poly-Si TFTs. A poly-Si film is produced on the mica substrate at $550^{\circ}C$ by the nickel-induced crystallization and the poly-Si TFTs on the mica substrate are successfully fabricated for the first time.

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Polyamide-epichlorohydrin 지력 증강제 함유 폴리비닐알코올의 물성 연구 (Physical Properties of Poly(vinyl alcohol) with Polyamide-epichlorohydrin as a Wet Strength Additive for Paper)

  • 장윤재;이활종;강호종
    • 폴리머
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    • 제37권6호
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    • pp.730-735
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    • 2013

  • 제지 공정에 있어서 지력 증강제로 사용되는 polyamide-epichlorohydrin(PAE)를 함유한 폴리비닐알코올(PVA)의 물성을 살펴보았다. PAE 첨가로 인하여 PVA의 용융과 결정화 열량이 감소될 뿐만 아니라 X-ray 결정 피크의 면적이 감소되는 것으로 보아 PAE에 의하여 PVA 가교가 진행됨을 알 수 있었다. 이러한 현상은 가수화도가 높은 PVA의 경우 더 두드러짐을 확인하였다. 하지만, 열처리에 의하여 PVA의 결정화가 일어나는 것으로 보아 PAE에 의한 PVA의 가교는 화학적 가교보다는 상대적으로 결합력이 약한 물리적 가교임을 알 수 있었다. PAE에 의한 PVA의 가교 및 결정화는 PVA의 열안정성, 기계적 강도를 증가시켜 이를 제지 공정의 지력 증강제로 사용할 경우, 종이의 건조 및 젖음 지력 향상에 효과가 있음을 알 수 있었다.

  • https://doi.org/10.7317/pk.2013.37.6.730 인용 PDF KSCI

Enhanced Crystallization of Si at Low Temperature by $O_2$ Flow during Deposition

  • Nam, Hyoung-Gin;Koo, Kyung-Hwan
    • 반도체디스플레이기술학회지
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    • 제6권2호
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    • pp.15-18
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    • 2007

  • Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

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