• Title/Summary/Keyword: poly paper

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A Time-Domain Comparator for Micro-Powered Successive Approximation ADC (마이크로 전력의 축차근사형 아날로그-디지털 변환기를 위한 시간 도메인 비교기)

  • Eo, Ji-Hun;Kim, Sang-Hun;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.16 no.6
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    • pp.1250-1259
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    • 2012
  • In this paper, a time-domain comparator is proposed for a successive approximation (SA) analog-to-digital converter (ADC) with a low power and high resolution. The proposed time-domain comparator consists of a voltage-controlled delay converter with a clock feed-through compensation circuit, a time amplifier, and binary phase detector. It has a small input capacitance and compensates the clock feed-through noise. To analyze the performance of the proposed time-domain comparator, two 1V 10-bit 200-kS/s SA ADCs with a different time-domain comparator are implemented by using 0.18-${\mu}m$ 1-poly 6-metal CMOS process. The measured SNDR of the implemented SA ADC is 56.27 dB for the analog input signal of 11.1 kHz, and the clock feed-through compensation circuit and time amplifier of the proposed time-domain comparator enhance the SNDR of about 6 dB. The power consumption and area of the implemented SA ADC are 10.39 ${\mu}W$ and 0.126 mm2, respectively.

Electrocatalytic activity of the bimetallic Pt-Ru catalysts doped TiO2-hollow sphere nanocomposites (Pt-Ru@TiO2-H 나노구조체촉매의 합성 및 전기화학적 특성평가)

  • Lee, In-Ho;Kwen, Hai-Doo;Choi, Seong-Ho
    • Analytical Science and Technology
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    • v.26 no.1
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    • pp.42-50
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    • 2013
  • This paper describes the electrocatalytic activity for the oxidation of small biomolecules on the surface of Pt-Ru nanoparticles supported by $TiO_2$-hollow sphere prepared for use in sensor applications or fuel cells. The $TiO_2$-hollow sphere supports were first prepared by sol-gel reaction of titanium tetraisopropoxide with poly(styrene-co-vinylphenylboronic acid), PSB used as a template. Pt-Ru nanoparticles were then deposited by chemical reduction of the $Pt^{4+}$ and $Ru^{3+}$ ions onto $TiO_2$-hollow sphere ($Pt-Ru@TiO_2-H$). The prepared $Pt-Ru@TiO_2-H$ nanocomposites were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), and elemental analysis. The electrocatalytic efficiency of Pt-Ru nanoparticles was evaluated via ethanol, methanol, dopamine, ascorbic acid, formalin, and glucose oxidation. The cyclic voltammograms (CV) obtained during the oxidation studies revealed that the $Pt-Ru@TiO_2-H$ nanocomposites showed high electrocatalytic activity for the oxidation of biomolecules. As a result, the prepared Pt-Ru catalysts doped onto $TiO_2$-H sphere nanocomposites supports can be used for non-enzymatic biosensor or fuel cell anode electrode.

Design of a PWM DC-DC Boost Converter IC for Mobile Phone Flash (휴대전화 플래시를 위한 PWM 전류모드 DC-DC converter 설계)

  • Jung, Jin-Woo;Heo, Yun-Seok;Park, Yong-Su;Kim, Nam-Tae;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.6
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    • pp.2747-2753
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    • 2011
  • In this paper, a PWM current-mode DC-DC boost converter for mobile phone flash application has been proposed. The converter which is operated with 5 Mhz high switching frequency is capable of reducing mounting area of passive devices such as inductor and capacitor, consequently is suitable for compact mobile phones. This boost converter consists of a power stage and a control block. Circuit elements of the power stage are inductor, output capacitor, MOS transistors and feedback resistors. Meanwhile, the control block consists of pulse width modulator, error amplifier, oscillator etc. Proposed boost converter has been designed and verified in a $0.5\;{\mu}m$ 1-poly 2-metal CMOS process technology. Simulation results show that the output voltage is 4.26 V in 3.7 V input voltage, output current 100 mA which is larger than 25 ~ 50 mA in conventional 500 Khz driven converter when the duty ratio is 0.15.

The growth of GaN on the metallic compound graphite substrate by HVPE (HVPE 방법에 의한 금속 화합물 탄소체 기판 위의 GaN 성장)

  • Kim, Ji Young;Lee, Gang Seok;Park, Min Ah;Shin, Min Jeong;Yi, Sam Nyung;Yang, Min;Ahn, Hyung Soo;Yu, Young Moon;Kim, Suck-Whan;Lee, Hyo Suk;Kang, Hee Shin;Jeon, Hun Soo;Sawaki, Nobuhiko
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.5
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    • pp.213-217
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    • 2013
  • The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In this paper, the poly GaN epilayer was grown by HVPE on the metallic compound graphite substrate with good heat dissipation, high thermal and electrical conductivity. We tried to observe the growth mechanism of the GaN epilayer grown on the amorphous metallic compound graphite substrate. The HCl and $NH_3$ gas were flowed to grow the GaN epilayer. The temperature of source zone and growth zone in the HVPE system was set at $850^{\circ}C$ and $1090^{\circ}C$, respectively. The GaN epilayer grown on the metallic compound graphite substrate was observed by SEM, EDS, XRD measurement.

A 8b 1GS/s Fractional Folding-Interpolation ADC with a Novel Digital Encoding Technique (새로운 디지털 인코딩 기법을 적용한 8비트 1GS/s 프랙셔널 폴딩-인터폴레이션 ADC)

  • Choi, Donggwi;Kim, Daeyun;Song, Minkyu
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.1
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    • pp.137-147
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    • 2013
  • In this paper, an 1.2V 8b 1GS/s A/D Converter(ADC) based on a folding architecture with a resistive interpolation technique is described. In order to overcome the asymmetrical boundary-condition error of conventional folding ADCs, a novel scheme with an odd number of folding blocks and a fractional folding rate are proposed. Further, a new digital encoding technique with an arithmetic adder is described to implement the proposed fractional folding technique. The proposed ADC employs an iterating offset self-calibration technique and a digital error correction circuit to minimize device mismatch and external noise The chip has been fabricated with a 1.2V 0.13um 1-poly 6-metal CMOS technology. The effective chip area is $2.1mm^2$ (ADC core : $1.4mm^2$, calibration engine : $0.7mm^2$) and the power dissipation is about 350mW including calibration engine at 1.2V power supply. The measured result of SNDR is 46.22dB, when Fin = 10MHz at Fs = 1GHz. Both the INL and DNL are within 1LSB with the self-calibration circuit.

Design of a Small Area 12-bit 300MSPS CMOS D/A Converter for Display Systems (디스플레이 시스템을 위한 소면적 12-bit 300MSPS CMOS D/A 변환기의 설계)

  • Shin, Seung-Chul;Moon, Jun-Ho;Song, Min-Kyu
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.4
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    • pp.1-9
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    • 2009
  • In this paper, a small area 12-bit 300MSPS CMOS Digital-to-Analog Converter(DAC) is proposed for display systems. The architecture of the DAC is based on a current steering 6+6 segmented type, which reduces non-linearity error and other secondary effects. In order to improve the linearity and glitch noise, an analog current cell using monitoring bias circuit is designed. For the purpose of reducing chip area and power dissipation, furthermore, a noble self-clocked switching logic is proposed. To verify the performance, it is fabricated with $0.13{\mu}m$ thick-gate 1-poly 6-metal N-well Samsung CMOS technology. The effective chip area is $0.26mm^2$ ($510{\mu}m{\times}510{\mu}m$) with 100mW power consumption. The measured INL (Integrated Non Linearity) and DNL (Differential Non Linearity) are within ${\pm}3LSB$ and ${\pm}1LSB$, respectively. The measured SFDR is about 70dB, when the input frequency is 15MHz at 300MHz clock frequency.

A3V 10b 33 MHz Low Power CMOS A/D Converter for HDTV Applications (HDTV 응용을 위한 3V 10b 33MHz 저전력 CMOS A/D 변환기)

  • Lee, Kang-Jin;Lee, Seung-Hoon
    • Journal of IKEEE
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    • v.2 no.2 s.3
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    • pp.278-284
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    • 1998
  • This paper describes a l0b CMOS A/D converter (ADC) for HDTV applications. The proposed ADC adopts a typical multi-step pipelined architecture. The proposed circuit design techniques are as fo1lows: A selective channel-length adjustment technique for a bias circuit minimizes the mismatch of the bias current due to the short channel effect by supply voltage variations. A power reduction technique for a high-speed two-stage operational amplifier decreases the power consumption of amplifiers with wide bandwidths by turning on and off bias currents in the suggested sequence. A typical capacitor scaling technique optimizes the chip area and power dissipation of the ADC. The proposed ADC is designed and fabricated in s 0.8 um double-poly double-metal n-well CMOS technology. The measured differential and integral nonlinearities of the prototype ADC show less than ${\pm}0.6LSB\;and\;{\pm}2.0LSB$, respectively. The typical ADC power consumption is 119 mW at 3 V with a 40 MHz sampling rate, and 320 mW at 5 V with a 50 MHz sampling rate.

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A CMOS Readout Circuit for Uncooled Micro-Bolometer Arrays (비냉각 적외선 센서 어레이를 위한 CMOS 신호 검출회로)

  • 오태환;조영재;박희원;이승훈
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.40 no.1
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    • pp.19-29
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    • 2003
  • This paper proposes a CMOS readout circuit for uncooled micro-bolometer arrays adopting a four-point step calibration technique. The proposed readout circuit employing an 11b analog-to-digital converter (ADC), a 7b digital-to-analog converter (DAC), and an automatic gain control circuit (AGC) extracts minute infrared (IR) signals from the large output signals of uncooled micro-bolometer arrays including DC bias currents, inter-pixel process variations, and self-heating effects. Die area and Power consumption of the ADC are minimized with merged-capacitor switching (MCS) technique adopted. The current mirror with high linearity is proposed at the output stage of the DAC to calibrate inter-pixel process variations and self-heating effects. The prototype is fabricated on a double-poly double-metal 1.2 um CMOS process and the measured power consumption is 110 ㎽ from a 4.5 V supply. The measured differential nonlinearity (DNL) and integrat nonlinearity (INL) of the 11b ADC show $\pm$0.9 LSB and $\pm$1.8 LSB, while the DNL and INL of the 7b DAC show $\pm$0.1 LSB and $\pm$0.1 LSB.

Design and Implementation of Efficient Decoder for Fractal-based Compressed Image (효율적 프랙탈 영상 압축 복호기의 설계 및 구현)

  • Kim, Chun-Ho;Kim Lee-Sup
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.12
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    • pp.11-19
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    • 1999
  • Fractal image compression algorithm has been studied mostly not in the view of hardware but software. However, a general processor by software can't decode fractal compressed images in real-time. Therefore, it is necessary that we develop a fast dedicated hardware. However, design examples of dedicated hardware are very rare. In this paper, we designed a quadtree fractal-based compressed image decoder which can decode $256{\times}256$ gray-scale images in real-time and used two power-down methods. The first is a hardware-optimized simple post-processing, whose role is to remove block effect appeared after reconstruction, and which is easier to be implemented in hardware than non-2' exponents weighted average method used in conventional software implementation, lessens costs, and accelerates post-processing speed by about 69%. Therefore, we can expect that the method dissipates low power and low energy. The second is to design a power dissipation in the multiplier can be reduced by about 28% with respect to a general array multiplier which is known efficient for low power design in the size of 8 bits or smaller. Using the above two power-down methods, we designed decoder's core block in 3.3V, 1 poly 3 metal, $0.6{\mu}m$ CMOS technology.

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I/Q channel 12-Bit 120MHz CMOS D/A Converter for WLAN (무선랜용 I/Q 채널 12bit 120MHz CMOS D/A 변환기 설계)

  • Ha, Sung-Min;Nam, Tae-Kyu;Seo, Sung-Uk;Shin, Sun-Hwa;Joo, Chan-Yang;Yoon, Kwang-S.
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.11 s.353
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    • pp.83-89
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    • 2006
  • This paper describes the design of I/Q channel 12bit Digital-to-Analog Converter(DAC) which shows the conversion rate of 120MHz and the power supply of 3.3V with 0.35um CMOS n-well 1-poly 4-metal process for advanced wireless transceiver. The proposed DAC utilizes 4-bit thermometer decoder with 3 stages for minimum glitch energy and linearity error. Also, using a optimized 4bit thermometer decoder for the decrement of the chip area. Integral nonlinearity(INL) of ${\pm}1.6LSB$ and differential nonlinearity(DNL) of ${\pm}1.3LSB$ have been measured. In single tone test, the ENOB of the proposed 12bit DAC is 10.5bit and SFDR of 73dB(@ Fs=120MHz, Fin=1MHz) is measured, respectively. Dual-tone test SFDR is 61 dB (@ Fs=100MHz, Fin=1.5MHz, 2MHz). Glitch energy of 31 pV.s is measured. The converter consumes a total of 105mW from 3.3-V power supply.