• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Bulletin of the Korean Chemical Society
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• v.22 no.12
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• pp.1337-1340
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• 2001

The bulk photopolymerization of methyl methacrylate (MMA) with para-substituted phenylsilanes such as F-C6H4SiH3 (1), H3C-C6H4SiH3 (2), and H3CO-C6H4SiH3 (3) was performed to produce poly(MMA)s containing the respective silyl moiety as an end group. For all the hydrosilanes, the polymerization yields and the polymer molecular weights decreased, whereas the TGA residue yields and the relative intensities of Si-H IR stretching bands increased as the relative silane concentration over MMA increased. The polymerization yields and polymer molecular weights of MMA with 1-3 increased in the order of 3 < 1 < 2. These hydrosilanes influence significantly upon the photopolymerization of MMA as both chain-initiation and chain-transfer agents.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.408-416
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• 1992

Stable TiS$i_2$was formed by RTA on single-Si and on poly-Si. Subsequently, an Al-1% Si layer with 600-nm thick was deposited on top of the TiS$i_2$, Finally, the specimens were annealed for 30min at 400-60$0^{\circ}C$in $N_2$ambient. The thermal stability of Al-1% Si/TiS$i_2$bilayer and interfacial reaction were investigated by measuring sheet resistance, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). The composition and phase of precipitates formed by the reaction of Al-1% Si with Ti-silicide were studied by energy dispersive spectroscopy (EDS), X-ray diffraction (XRD). In the case of single-Si substrate the reaction of Al-1% Si layer with TiS$i_2$layer resulted in precipitates, consuming all TiS$i_2$layer at 55$0^{\circ}C$. On the other hand, the disappearance of TiS$i_2$on poly-Si occurred at 50$0^{\circ}C$ and more precipitates were formed by the reaction of Al-1% Si/TiS$i_2$on potty-Si substrate than those of the reaction on single-Si substrate. This phenomenon resulted from the fact that Ti-silicide formed on poly-Si was more unstable than on single-Si by the effect of grain boundary. By EDS analysis the precipitates were found tobe composed of Ti, Al, and Si. X-ray diffraction showed the phase of precipitates to be theT$i_7$A$l_5$S$i_12$ternary compound.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.23-30
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• 1993

Hydrogenation on the top gate and bottom gate Poly-Si TET's was performed by using Nh$_{3}$ plasma and annealing SiN film deposited by PECVD and then the electric characteristics on Poly-Si TET were investigated. As the time of NA$_{3}$ plasma treatment increaes, on/off current ratio gradually increases and the swing value decreases. The trap densities of graim boundaries in Poly-Si decrease very much during the inital 20min of hydrogenation time, and the decreasing scale becomes smaller after 20 min. The electric characteristics of the top gate TFT are better than those of the bottom gate TFT, it is considered due to the defects at the interface between the Poly-Si and the underlayer, SiO$_{2}$. After NH$_{3}$ plasma was treated for 2 hours for the top gate TFT, as the aging time atroon temperature increases on current was not scacely changed and off current decreases more than 1 order. Gate current density recovers to original value after the aging treatment for 8 days and then the electric characteristics are finally improved. It is suggested that the degraded characteristics of gate oxide are improved, from the variations of C-V characteristics with aging time. For the hydrogenation of isothermal and isochronal annealing SiN film deposited by PECVD, the characteristics of Poly-Si TFT are improved with increasing annealing temperature and are not largely changed with increasing annealing time. This results is good in agreement with the hydrogen reduction in Sin film as variations of annealing temperature and time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.65-65
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• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.245-248
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• 2005

The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.324-331
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• 1995

The leakage current characteristics of the low temperature processed LDD structure poly-Si TFT is analyzed. The excimer laser technology was applied to the recrystallization process of poly-Si film and the maximum processing temperature was retained under 600.deg.C. From the fabricated LDD space 0.3.mu.m to 3$\mu$m, the best on/off current ration could be obtained with the 1.3$\mu$m LDD space. And the threshold voltage did not increase more than 4V over 0.8$\mu$m LDD space. The characteristics of leakage current was compared to non-LDD structure TFT to analyze the mechanism of leakage current. Consequently, it could be concluded that the leakage current is strongly affected by the trap states as well as high electric field between gate and drain.

• Korean Chemical Engineering Research
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• v.60 no.3
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• pp.327-333
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• 2022

In this study, silicon/carbon nanotube/carbon (Si/CNT/C) composites for anode were prepared to improve the volume expansion of silicon used as a high-capacity anode material. Si/CNT were prepared by electrostatic attraction of the positively charged Si and negatively charged CNT and then hydrothermal synthesis was performed to obtain the spherical Si/CNT/C composites. Poly(vinylidene fluoride) (PVDF), polyacrylic acid (PAA), and styrene butadiene rubber (SBR) were used as binders for electrode preparation, and coin cell was assembled using 1.0 M LiPF₆ (EC:DMC:EMC = 1:1:1 vol%) electrolyte and fluoroethylene carbonate (FEC) additive. The physical properties of Si/CNT/C anode materials were analyzed using SEM, EDS, XRD and TGA, and the electrochemical performances of lithium-ion batteries were investigated by charge-discharge cycle, rate performance, dQ/dV and electrochemical impedance spectroscopy tests. Also, it was confirmed that both capacity and rate performance were significantly improved using the PAA/SBR binder and 10 wt% FEC-added electrolyte. It is found that Si/CNT/C have the reversible capacity of 914 mAh/g, the capacity retention ratio of 83% during 50 cycles and the rate performance of 70% in 2 C/0.1 C.

• Bulletin of the Korean Chemical Society
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• v.34 no.6
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• pp.1637-1642
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• 2013

We carried out the melt copolymerization reactions of 1,2-bis(diethylamino)tetramethyldisilane with several aryldiols such as, 4,4'-biphenol, 4,4'-isopropylidenediphenol, 9H-fluoren-9,9-dimethanol, and 4,4'-(9-fluorenylidene) bis(2-phenoxyethanol) to afford poly[oxy(arylene)oxy(tetramethyldisilylene)]s containing fluorescent aromatic chromophore groups in the polymer main chain: poly[oxy(4,4'-biphenylene)oxy(tetramethyldisilylene)], poly[oxy{(4,4'-isopropylidene) diphenylene}oxy(tetramethyldisilylene)], poly[oxy(9H-fluorene-9,9-dimethylene) oxy(tetramethyldisilylene)], and poly[oxy{4,4'-(9-fluorenylidene)bis(2-phenoxyethylene)}oxy(tetramethyldisilnylene)]. These prepared materials are soluble in common organic solvents such as $CHCl_3$ and THF. The obtained polymers were characterized by several spectroscopic methods such as $^1H$, $^{13}C$, and $^{29}Si$ NMR. Further, FTIR spectra of all the polymers exhibited characteristic Si-O stretching frequencies at 1014-1087 $cm^{-1}$. These polymeric materials in THF showed strong maximum absorption peaks at 268-281 nm, strong maximum excitation peaks at 263-291 nm, and strong maximum fluorescence emission bands at 314-362 nm due to the presence of tetramethyldisilylene and several arylene chromophores in the polymer main chain. TGA thermograms indicated that most of the polymers were stable up to $200^{\circ}C$ with a weight loss of 3-16% in nitrogen.