• Bulletin of the Korean Chemical Society
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• 제23권7호
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• pp.964-970
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• 2002

We synthesized three kinds of chromophores incorporating aromatic quinoline unit as a $\pi-conjugated$ bridge in order to prepare more thermally stable nonlinear optical (NLO) chromophores than general stilbene unit. The NLO poly(methylmethacrylate) copolymer, polyimides, and polyester were successfully synthesized by these corresponding quinoline-based monomers. Their physical and optical properties were investigated by thermogravimetry, gel permeation chromatography, ultraviolet-visible spectroscopy, second harmonic generation (SHG) and electro-optic (EO) measurement. All the polymers exhibited better thermal stability,however their NLO activity was a little lower than that of general stilbene-based NLO polymers. Among three kinds of polymers, the PMMA copolymer with quinoline chromophores had the largest SHG coefficient d33 value of 27 pm/V (at 1.064 $\mu\textrm{m})$ and EO coefficient r33 value of 6.8 pm/V (at 1.3 $\mu\textrm{m}$).

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.183-187
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• 2005

Thin films of diblock copolymers may be suitable for semiconductor device applications since they enable patterning of ordered domains with dimensions below photolithographic resolution over wafer-scale area. We obtained nanometer-scale cylindrical structure of dibock copolymer of polystyrene-block-poly(methylmethacrylate), PS-b-PMMA, also demonstrate pattern transfer of the nanoporous polymer using both reactive ion etching. The size of fabricated naonoholes were about 10 nm. Fabricated nanopattern surface was observed by field emission scanning electron microscope (FESEM).

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.53-59
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• 2015

The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

• 접착 및 계면
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• 제4권4호
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• pp.22-27
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• 2003

탄소나노튜브(CNT)의 분산성을 개선하기 위하여 $HNO_3$와 $H_2SO_4$를 사용하여 표면을 개질하였고, 적외선 분광법(FT-IR)과 산-염기 적정법을 통하여 CNT의 표면에 카르복실산이 도입된 것을 확인하였다. CNT의 분산성을 확인하기 위하여 초음파를 이용하여 톨루엔, 디메틸포름아마이드 (DMF) 및 N-메틸피롤리돈(NMP) 등의 유기용매에 개질 전(rCNT) 및 개질 후(mCNT)를 각각 분산시키고, 실시간 광학현미경(real-time video microscope)으로 분산거동을 관찰하였다. rCNT에 비해 mCNT가 극성이 큰 DMF 및 NMP 용매에 분산이 잘 되었으며 비극성인 톨루엔에는 분산성이 나쁨을 알 수 있었다. 또한, DMF에 CNT를 분산시킨 후, 폴리메틸메타크릴레이트(PMMA)를 용해시키고 이를 필름으로 제조한 후 주사전자현미경(SEM)을 통하여 분산형태를 관찰한 결과 mCNT의 분산성이 우수하였다.

• Composites Research
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• 제32권3호
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• pp.163-169
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• 2019

본 연구에서 우리는 자유 라디칼 중합에 기반한 열가소성 고분자의 동적 분자동역학 중합 알고리즘을 이용하여 95%의 변환률을 갖는 PMMA의 고분자 모델을 구성하였다. 본 알고리즘에서는 계산 수행에 필요한 시간을 줄이기 위해 PCFF 포텐셜 함수의 결합 항들 TraPPE-UA 포텐셜 함수의 비결합 항을 조합한 united-atom level의 coarse-grained 포텐셜 함수를 도입하였다. 자유 라디칼 중합 시뮬레이션을 통해 생성된 각 사슬을 분석하여 고분자의 분자량 분포와 평균 분자량을 계산하였고, 고분자의 분자량은 초기 상태에 존재하는 개시제 라디칼의 수를 이용하여 조절하였으며, 유리전이온도, 기계적 물성에 미치는 분자량의 효과에 대해 연구되었다.

• Tribology and Lubricants
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• 제22권5호
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• pp.243-251
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• 2006

Molecular dynamics simulations of nanoimprint lithography NIL) are performed in order to investigate effects of process parameters, such as stamp shape, imprinting temperature and adhesive energy, on nanoimprint lithography process and pattern transfer. The simulation model consists of an amorphous $SiO_{2}$ stamp with line pattern, an amorphous poly-(methylmethacrylate) (PMMA) film and an Si substrate under periodic boundary condition in horizontal direction to represent a real NIL process imprinting long line patterns. The pattern transfer behavior and its related phenomena are investigated by analyzing polymer deformation characteristics, stress distribution and imprinting force. In addition, their dependency on the process parameters are also discussed by varying stamp pattern shapes, adhesive energy between stamp and polymer film, and imprinting temperature. Simulation results indicate that triangular pattern has advantages of low imprinting force, small elastic recovery after separation, and low pattern failure. Adhesive energy between surface is found to be critical to successful pattern transfer without pattern failure. Finally, high imprinting temperature above glass transition temperature reduces the imprinting force.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.30-33
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• 2006

Transparent indium tin oxide (ITO) anode surface was modified using $O_3$ Plasma and organic ultrathin buffer layers were deposited on the ITO surface using 13.56 MHz RF plasma polymerization technique. The EL efficiency, operating voltage and lifetime of the organic light-emitting device (OLED) were investigated in order to study the effect of the plasma surface treatment and role of plasma polymerized organic ultrathin buffer layer. Poly methylmethacrylate (PMMA) layers were plasma polymerized on the ITO anode as buffer layer between anode and hole transport layer (HTL). The plasma polymerization of the organic ultrathin layer were carried out at a homemade capacitive-coupled RF plasma equipment. N,N'-diphenyl-N,N'(3- methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as HTL, Tris(8-hydroxyquinolinato) Aluminum $(Alq_3)$ as both emitting layer (EML)/electron transport layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Effects of the plasma surface treatment of ITO and plasma polymerized buffer layers on the OLED performance were discussed.

• 폴리머
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• 제31권3호
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• pp.184-188
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• 2007

산성 도금조에서 차인산나트륨을 환원제로 하는 무전해 도금법을 사용하여 직경 $4{\mu}m$의 PMMA(poly-methylmethacrylate)/HDDA(1,6-hexanedioldiacrylate) 단분산 가교 고분자 미립자에 니켈층을 코팅할 시 1) 전처리 조건변화, 2) 도금조 온도변화, 3) 도금조 pH 변화, 및 4) 초기 도금조 pH 조절 등에 따라서 도금속도, 도금면의 상태 및 도금 재현성을 관찰하였다. 무전해 도금에서의 전처리 과정은 모든 단계가 중요하였으나 특히 conditioning 및 acceleration 과정이 균일한 도금층을 형성하는데 중요하였고, 도금조 온도 및 pH의 상승에 따라서 도금속도가 증가하였으며, 특히 초기 도금조의 pH의 조절이 도금 재현성을 확보하는데 매우 중요하였다.