• Title/Summary/Keyword: poly(A)

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A Case Study on the Release Characteristic and Removal Efficiency of Vinyl Chloride in the Poly Vinyl Chloride Extrusion Process (PVC압출공정의 염화비닐 발생특성과 작업환경개선에 관한 사례연구)

  • Park, Dong Uk
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.3 no.1
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    • pp.91-98
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    • 1993
  • This study was carried out to investigate characteristic of vinyl chloride emissioned from poly vinyl chloride extrusion process and to evaluate the efficiency of local exhaust ventilation system. Before local ventilation facility was constructed in poly vinyl chloride extrusion process, the average worker exposure to vinyl chloride was 3.15 ppm, which exceeded Threshold Limit Value of American Conference of Gorvernmental Industrial Hygienists (ACGIH-TLV), 1 ppm. lt is possible that vinyl chloride residues in the poly vinyl chloride resin was released or degased due to extrusion heat. The larger the width of vinyl tube become, the higher worker exposure to vinyl chloride was. It is estimated that vinyl chloride from vinyl chloride resin increased as amount of poly vinyl chloride resin extruded in the extrusion process increased. Canopy hood was an appropriate type for poly vinyl chloride resin extrusion process. This local exhaust ventilation has fan static pressure of 7.65 inch wg($190mmH_2O$, total volumetric flowlate of 4,796 CFM ($135.8m^3$/min) and fan power requirement of 12 hp (8.952 Kw). After this local exhaust ventilation was constructed there, the average concentration of worker exposure to vinyl chloride was reduced to be 0.46 ppm, which was below the Threshold Limit Value, 1 ppm. Also, the removal efficiency rate of vinyl chloride attained by local exhaust ventilation was 85.3%. It was a statistically significant (p<0.01).

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Analysis of Grain Boundary Effects in Poly-Si Wafer for the Fabrication of Low Cost and High Efficiency Solar Cells (저가 고효율 태양전지 제작을 위한 다결정 실리콘 웨이퍼 결정입계 영향 분석)

  • Lee, S.E.;Lim, D.G.;Kim, H.W.;Kim, S.S.;Yi, J.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1361-1363
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    • 1998
  • Poly-Si grain boundaries act as potential barriers as well as recombination centers for the photo-generated carriers in solar cells. Thereby, grain boundaries of poly-Si are considered as a major source of the poly-Si cell efficiency was reduced This paper investigated grain boundary effect of poly-Si wafer prior to the solar cell fabrication. By comparing I-V characteristics inner grain, on and across the grain boundary, we were able to detect grain potentials. To reduce grain boundary effect we carried out pretreatment, $POCl_3$ gettering, and examined carrier lifetime. This paper focuses on resistivity variation effect due to grain boundary of poly-Si. The resistivity of the inner grain was $2.2{\Omega}-cm$, on the grain boundary$2.3{\Omega}-cm$, across the grain boundary $2.6{\Omega}-cm$. A measured resistivity varied depending on how many grains were included inside the four point probes. The resistivity increased as the number of grain boundaries increased. Our result can contribute to achieve high conversion efficiency of poly-Si solar cell by overcoming the grain boundary influence.

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Crystal growth of polyctystalline 3C-SiC thin films on AlN buffer layer (AlN 완충층을 이용한 다결정 3C-SiC 박막의 결정성장)

  • Kim, Kang-San;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.333-334
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    • 2007
  • This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

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Self-aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process (Photo Resistor Reflow 방법을 이용한 오프셋 마스크를 이용하지 않는 새로운 자기 정합 폴리 실리콘 박막 트랜지스터)

  • Park, Cheol-Min;Min, Byung-Hyuk;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1085-1087
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    • 1995
  • A large leakage current may be one of the critical issues for poly-silicon thin film transistors(poly-Si TFTs) for LCD applications. In order to reduce the leakage current of poly-Si TFTs, several offset gated structures have been reported. However, those devices, where the offset length in the source region is not same as that in the drain region, exhibit the asymmetric electrical performances such as the threshold voltage shift and the variation of the subthreshold slope. The different offset length is caused by the additional mask step for the conventional offset structures. Also the self-aligned implantation may not be applicable due to the mis-alignment problem. In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photo resistor reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate from both sides of the main gate. The poly-Si channel layer below the offset oxide is protected from the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of our new device is the offset lesion due to the offset oxide. Our experimental results show that the offset region, due to the photo resistor reflow process, has been successfully obtained in order to fabricate the offset gated poly-Si TFTs. The advantages of the proposed device are that the offset length in the source region is the same as that in the drain region because of the self-aligned implantation and the proposed device does not require any additional mask process step.

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Electrorheological Characteristics of Suspensions composed of Polyaniline Derivatives with Ionic or Nonionic Side Groups (Ionic 또는 Nonionic Side Group을 갖는 Polyaniline Suspension의 전기유변특성)

  • 조민성;김지우;장원휴;서문석;신민재;최형진
    • The Korean Journal of Rheology
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    • v.11 no.2
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    • pp.91-96
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    • 1999
  • Semiconductive polyaniline and its derivatives such as poly(aniline-co-sodium diphenylamine sulfonate), poly (aniline-co-o-ethoxyaniline), poly (o-methylaniline), and poly (o-methoxyaniline) were synthesized, and then adopted as suspending particles of the electrorheological (ER) fluids. All suspensions of these polyaniline derivatives showed typical ER properties under high applied electric fields. However, flow behaviors are observed to be quite different depending on the polyaniline derivatives, especially in the stress plateau regions obtained at low shear rates. Using a scaling law, we also obtained universal cures of ER fluids from the flow curves at each applied electric field based on the relationship between the dynamic yield stress with the applied electric field and flow curve changes according to the electric fields.

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Morphology of Membrane of Acrylic Polymers by Wet Phase Inversion Method (습식 상 역전 방법으로 제조한 아크릴계 고분자 막의 모폴로지)

  • Choi Seung-Eun;Park Han-Soo;Lee Kwang-Hee
    • Polymer(Korea)
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    • v.30 no.2
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    • pp.108-111
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    • 2006
  • In this work, the effect of the hydrophobicity of acrylic polymers on the membrane morphology was investigated. The membranes were prepared with poly(methyl methacrylate) (PMMA), poly(ethyl methacrylate) (PEMA), poly (butyl methacrylate) (PBMA), poly(isobutyl methacrylate), and their blends using the wet phase inversion method. PMMA and PEMA having a relatively less hydrophobicity formed the channel-like structure, whereas PBMA and PIBMA having more hydrophobic units formed the finger-like structure. These morphological changes were attributed to differences in the solidification process of the polymer-rich phase determine d by the polymer/solvent/nonsolvent ternary phase diagram. The membrane structures of the blends were controlled by the main component of their blends.

Targeted Drug Delivery Carriers Using Folate Conjugated Poly((R)-3-hydroxy butyrate)-Poly(ethylene glycol) Nanoparticles (Folate가 수식된 Poly((R)-3-hydroxy butyrate)-Poly(ethylene glycol) 나노입자를 이용한 표적지향형 약물전달체)

  • Kwon, Seung-Ho;Kim, Young-Jin
    • Polymer(Korea)
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    • v.33 no.6
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    • pp.515-519
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    • 2009
  • Biodegradable poly((R)-3-hydroxy butyrate) and poly(ethylene glycol) was conjugated to make amphiphilic di-block copolymer. Folate was conjugated at di-block copolymer to target the cancer cells. Copolymer was ready to form the self-assembled micelle whose size was 125~156 nm in aqueous solution. Griseofulvin as a hydrophobic drug was loaded in nanoparticles. Their loading efficiencies were 35~56%. Hydrophobic drug was continuously released for 24 h. Cell viability test showed that folate attached particles were 10% more efficient than the particles without targeting ligands.

Preparation and Evaluation of Bupivacaine Microspheres by a Solvent Evaporation Method (II) (용매증발법에 의한 부피바카인 마이크로스피어의 제조 및 평가 (II))

  • 곽손혁;이시범;이종수;이병철;황성주
    • YAKHAK HOEJI
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    • v.45 no.6
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    • pp.623-633
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    • 2001
  • Various bupivacaine-loaded microspheres were prepared using poly(d,1-lactide) (PLA) and poly(d,1-lactic-co-glycolide) (PLGA) by a solvent evaporation method for the sustained release of drug. The effects of process conditions such as drug loading, polymer type and solvent type on the characteristics of microspheres were investigated. The prepared microspheres were characterized for their drug loading, size distribution, surface morphology and release kinetics. Drug loading efficiency and yield of PLGA micro- spheres were higher than those of PLA microspheres. The prepared microspheres had an average particle size below 5${\mu}{\textrm}{m}$. The particle size range of microspheres was 1.65~2.24${\mu}{\textrm}{m}$. As a result of SEM, the particle size of PLA microspheres was smaller than that of PLGA microspheres. In morphology studies, microspheres showed a spherical shape and smooth surface in all process conditions. In thermal analysis, bupivacaine-loaded microspheres showed no peaks originating from bupivacaine. This suggested that bupivacaine base was molecular-dispersed in the polymer matrix of microspheres. The release pattern of the drug from microspheres was evaluated for 96 hours. The initial burst release of bupivacaine base decreased with increasing the molecular weight of PLGA, and the drug from microspheres released slowly. In conclusion, bupivacaine-loaded microspheres were successfully prepared from poly(d,1-lactide) and poly (d,1- lactic-co-glycolide) polymers with different molecular weights allowing control of the release rate.

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Study on The Thermal Properties of Poly(methyl methacrylate) and Poly($\alpha$-methylstyrene-co-acrylonitrile) Mix tures (Poly(methyl methacrylate)와 Poly($\alpha$-methylstyrene-co-acrylonitrile) 혼합물의 열적특성에 관한 연구)

  • Moon, Deog-Ju;Kim, Byung-Chul;Kim, Dong-Keun;Seul, Soo-Duk;Sohn, Jin-Eon
    • Elastomers and Composites
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    • v.23 no.4
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    • pp.289-298
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    • 1988
  • The thermal degradation of poly(methyl methacrylate)(PMMA) and poly($\alpha$-methylstyrene-co-acrylonitrile)(SAN) mixtures were carried out using the thermogravimetry(TG) and differential scanning calorimetry(DSC) in the stream of nitrogen and air with 50 ml/min at the various heating rate from 4 to $20^{\circ}C/min$ and temperature from 20 to $500^{\circ}C$. The value of activation energies of thermal degradation determined by TG and DSC in the various PMMA/SAN mixtures were 34-54 kcal/mol in the stream of nitrogen. The value of activation energy of SAN 60% mixture were appeared high in comparison with addition rule. PMMA/SAN mixtures by the analysis of infrared spectrophotometer were decomposed by main chain scission in the stream of nitrogen.

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Design of A 1'${\times}$1', 512${\times}$512 Poly-Si TFT-LCD with Integrated 8-bit Parallel-Serial Digital Data Drivers

  • Shin, Won-Chul;Lee, Seung-Woo;Chung, Hoon-Ju;Han, Chul-Hi
    • Journal of Information Display
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    • v.2 no.2
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    • pp.1-6
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    • 2001
  • A $1"{\times}l"$, $512{\times}512$ poly-Si TFT-LCD with a new integrated 8-bit parallel-serial digital data driver was proposed and designed. For high resolution, the proposed parallel-serial digital driver used serial video data rather than parallel ones. Thus, digital circuits for driving one column line could be integrated within very small width. The parallel-serial digital data driver comprised of shift registers, latches, and serial digital-to-analog converters (DAC's). We designed a $1"{\times}l"$, $512{\times}512$ poly-Si TFT-LCD with integrated 8-bit parallel-serial digital data drivers by a circuit simulator which has physical-based analytical model of poly-Si TFT's. The fabricated shift register well operated at 2 MHz and $V_{DD}$=10V and the fabricated poly-Si TFT serial DAC's, which converts serial digital data to an analog signal, could convert one bit within $2.8{\mu}s$. The driver circuits for one data line occupied $8100{\times}50{\mu}m^2$ with $4{\mu}m$ design rule.

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