• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.175-184
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• 2001

In this study, the improved throughput and stability in device fabrication could be obtained by applying CMP process to STi structue in 0.18 um semiconductor device. To employ the CMP process in STI structure, the Reverse Moat Process used to be added after STI Fill, as a result, the process became more complex and the defect were seriously increased than they had been,. Removal rate of each thin film in STI CMP was not uniform, so, the device must have been affected. That is, in case of excessive CMP, the damage on the active area was occurred, and in the case of insufficient CMP nitride remaining was happened on that area. Both of them deteriorated device characteristics. As a solution to these problems, the development of slurry having high removal rate and high oxide to nitride selectivity has been studied. The process using this slurry afford low defect levels, improved yield, and a simplified process flow. In this study, we evaluated the 'High Selectivity Slurry' to do a global planarization without reverse moat step, and also we evaluated EPD(Eend Point Detection) system with which 'in-situ end point detection' is possible.

• 동력기계공학회지
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• 제14권1호
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• pp.22-26
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• 2010

Generally, it is a method to remove the fouling cleaning the plate heat exchanger with chemicals or polishing with a brush or cloth after stopping the equipment and disassembling heat exchanger. However, the equipment must be stopped and taken apart when using this method, which causes an unnecessary work to assemble again after cleaning it. In this study, it has developed and tested the equipment which can automatically clean the fouling on plate heat exchanger at regular intervals with air bubbles. It indicated that the overall heat transfer coefficient had decreased without significant differences similar to that calculated without air bubbles until after 72 hours when making air bubbles to remove fouling ingredient on the surface of heat transfer area every 10 minutes per 2 hours. However, it showed that there was a 10% higher of heat transfer effect compared to the case without air bubbles of after 192 hours.

• 한국정밀공학회지
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• 제23권5호
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• pp.44-50
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• 2006

This paper describs about the technique of ultra-precision machining for an infrared(IR) camera aspheric mirror. A 200 mm diameter aspheric mirror was fabricated by SPDTM(Single Point Diamond Turning Machine). Aluminum alloy as mirror substrates is known to be easily machined, but not polishable due to its ductility. Aspheric large reflector without a polishing process, the surface roughness of 5 nm Ra, and the form error of ${\lambda}/2\;({\lambda}=632.8\;nm)$ for reference curved surface 200 mm has been required. The purpose of this research is to find the optimum machining conditions for cutting reflector using Al6061-T651 and apply the SPDTM technique to the manufacturing of ultra precision optical components of Al-alloy aspheric reflector. The cutting force and the surface roughness are measured according to each cutting conditions feed rate, depth of cut and cutting speed, using diamond turning machine to perform cutting processing. As a result, the surface roughness is good when feed rate is 1mm/min, depth of cut $4{\mu}m$ and cutting speed is 220 m/min. We could machined the primary mirror for IR camera in diamond machine with a surface roughness within $0.483{\mu}m$ Rt on aspheric.

• 한국정밀공학회지
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• 제16권4호통권97호
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• pp.148-154
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• 1999

This study was carried out to verify grinding performance of dental diamond bur and investigate the possibility of AE application in dentistry field. Workpieces were made of acryl and bovine respectively for the experiments in this study. Grinding test was conducted to get the data of grinding resistance and specific grinding energy of four different types of diamond bur by using tool dynamometer. AE signal was acquired to verify grinding process in the AE measuring system. Tool wear was observed to find parameters about grinding characteristics of diamond bur by means of SEM picture. It was found that the wear of dental diamond bur could be detected with polishing of grinding material, removal of adhesive parts, wear of particles neighboring cutting nose, loss of material and elevation of temperature. The wear of B, C, D type diamond bur is due to wear and fracture of grain size. Abnormal state can be found through the behavior of AE signal in the grinding working. As a result, it is expected that forecast of abnormal state is possible using AE equipments under real time process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.149-153
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• 2003

Chemical mechanical polishing (CMP) technology for global planarization of multi-level inter-connection structure has been widely studied for the next generation devices. CMP process has been paid attention to planarized pre-metal dielectric (PMD), inter-layer dielectric (ILD) interconnections. Expecially, shallow trench isolation (STI) used to CMP process on essential. Recently, the direct STI-CMP process without the conventional complex reverse moat etch process has established by using slurry additive with the high selectivity between $SiO_2$ and $Si_3N_4$ films for the purpose of process simplification and n-situ end point detection(EPD). However, STI-CMP process has various defects such as nitride residue, tom oxide and damage of silicon active region. To solve these problems, in this paper, we studied the planarization characteristics using a high selectivity slurry(HSS). As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of HSS STI-CMP process.

• 한국정보통신학회논문지
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• 제18권2호
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• pp.276-281
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• 2014

본 논문은 산업용 로봇을 위한 힘 피드백 제어는 사람의 감각을 기반으로 한 작업을 대체하여 구현하기에 적합한 연마 시스템을 제안하였다. 기존 연마작업의 표면 연마, 비드처리, 기계 가공 디버링 등의 공정은 그 복잡성에서 자동화가 가장 곤란하다고 인식되어 주로 인력에 의존 해왔다. 본 연구에서는 연마 공구를 파지시킨 힘 제어 로봇에 의한 자동 연마 시스템의 구축과 힘 센서로부터 신호 피드백 제어 방식의 특성 파악과 연마 공정에 적응성을 검증했다. 또한 실용화를 목적을 위한 선박의 바닥 및 측면 연마에의 응용을 진행했다. 따라서 자체 제작한 연마로봇을 활용 한 표면 연마작업을 통하여 실험결과를 검증하였다.

• 한국산학기술학회논문지
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• 제3권2호
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• pp.141-145
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• 2002

이온교환수지탑으로 유입된 이온은 연속적인 이온교환 평형을 이루면서 수지층을 통과한다는 가정하에 질량작용법칙과 몰 균형식을 조합하여 연속이은교환평형 칼럼모델을 개발하였다. 연속이온교환평형 칼럼모델을 이용하여 원자력발전소 복수탈염설비 탈염기의 성능을 평가한 결과, Na/sup +/및 Cl/sup -/누출 농도는 수지의 재생효율에 따라 다르며, 특정이온의 유입수 및 유출수에서 농도 비율은 용액 및 수지의 상태에 따라 달라짐을 확인하였다. 본 모델은 수지농도를 보정하여 국부 불완전 평형을 고려할 수 있고, 다성분 존재하의 경쟁적 이온교환을 묘사할 수 있는 장점을 가지고 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.90-93
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STI CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. To resolve these problems, the development of slurry for CMP with high removal rate and high selectivity between each thin films was studied then it can be prevent the reasons of many defects by reasons of many defects by simplification of process that directly apply CMP process to STI structure without the reverse moat pattern process.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.28-31
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• 2003

Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H$_2$O$_2$ 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2000년도 제32회 추계학술대회 정기총회
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• pp.406-413
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• 2000

The friction and wear behaviors of Magnetron Sputtered MoS$_2$films were investigated by using a pin on disk type tester which was designed and manufactured for this experiment. The experiment was conducted by using silicon nitride (Si$_3$N$_4$) as a pin material and Magnetron Sputtered MoS$_2$on bearing steel (STB2) as a disk material, under operating conditions that include different surface roughness (Polishing specimen, Grinding specimen)(2types), linear sliding velocities in the range of 22, 44, 66mm/sec (3types), normal loads vary from 9.8N, 19.6N, 29.4N(3types), corresponding to contact pressures of 1.9∼2.7GPa and atmospheric conditions of high vacuum( 1.3${\times}$10$\^$-4/Pa), medium vacuum( 1.3${\times}$10$\^$-l/Pa), ambient air(10$\^$5/Pa)(3types). We investigated fracture mechanism in magnetron sputtered MoS$_2$films with Magnetron Sputtering method in each experiment.