• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.333-337
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• 2010

Domain structure and polarization switching in (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20 and 35at% have been investigated in-situ by scanning force microscope (SFM) in a piezoresponse mode under a step DC electrical voltage. In the initial annealed condition, polar nano domains (PND) and domain striations oriented along {110} were observed in x=20 and x=35, respectively. For x=20, domain switching occurs by heterogeneous nucleation, where nucleation is not confined in the vicinity of domain boundaries, but rather can occur throughout the crystal volume. However, for x=35, domain switching tends to be preferentially initiated near pre-existing twin boundaries. With increasing the applying voltage, the nuclei density increased and assembled into {110} striations, indicating a stress-accommodated domain growth process. At higher voltage, nucleation occurs heterogeneously throughout the crystal volume.

• Journal of Magnetics
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• v.14 no.3
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• pp.104-107
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• 2009

The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization ($M_s$) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing $M_s$ of PELs and decreasing interlayer exchange coupling.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.14-16
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• 2009

Surface driven switching of the liquid crystal bulk arising from the coupling between an applied electric field and a polarized state of a nematic liquid crystal, both localized at the substrate surface, is reported. Fast switching is demonstrated in a hybrid aligned nematic cell with a fringe electric field generated by comb-like electrode structure.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.30 no.2
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• pp.11-19
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• 2016

By incorporating a polarization-diversity loop configuration, we have demonstrated the inline switching of transmission and reflection spectra of one of two short-period fiber gratings (SPFGs) with different resonance wavelengths without reconfiguring the filter structure. The proposed filtering apparatus consists of a fiber-pigtailed polarization beam splitter, two SPFGs, and three quarter-wave plates (QWPs). The proposed filter can independently choose the transmission or reflection spectrum of each SPFG through the appropriate adjustment of the orientation angles of the QWPs within the filter without additional optical switches and couplers. The average insertion loss, band rejection ratio, and side-mode suppression ratio of the fabricated filter were measured as ~4.59, ~17.88, and ~19.67dB, respectively.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.359-360
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• 2009

This paper reports experimental results on temporal characteristics of injection-locked polarization switching of a conventional type 1.55-${\mu}m$ wavelength single-mode vertical-cavity surface-emitting laser (VCSEL). The polarization of external injection beam was kept orthogonal to main mode of VCSEL. The relation for variation of intensity of two polarization modes of VCSEL with wavelength detuning for various repetition rates of injection pulse is reported.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.197-203
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• 1995

Nearly fully dense PZT samples both with tetragonal and with morphotropic phase boundary compositions were prepared by the conventional powder processing and sintering. A micro-indentation technique was used to evaluate the dependence of fracture toughness on remanent polarization, crack length and the direction of crack propagation. The result shows that the toughness increases with the remanent polarization along the poling direction and decreases in the transverse direction. The dependence of toughness on the remanent polarization is neither symmetric nor linear but rather shown to be saturated quickly with the increase in remanent polariztion. R-curve behaviors are observed in both poled and unpoled samples. Sequential SEM and XRD studies on annealed, poled, ground, fractured and etched samples show that domain switching is evident as a viable toughening mechanism but might depend upon the rate of crack propagation. Grain bridging is also observed as one of the active toughening mechanisms.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.367-370
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• 2004

We fabricated PLT(5) thin film on $Pt/TiO_x/SiO_2/Si$ substrate by using sol-gel method and investigated leakage current, switching and retention properties. The leakage current density of PLT(5) thin film was $3.56{\times}10^{-7}A/cm^2$ at 4V. In the examination of switching properties, pulse voltage and load resistance were $2V{\~}5V$ and $50{\Omega}{\~}3.3k{\Omega}$, respectively. Switching time had a tendency to decrease from 520ns to 140ns with the increase of pulse voltage, and also the time was increased from 140ns to $13.7{\mu}s$ with the increase of load resistance. The activation energy obtained from the relation of applied pulse voltage and switching time was about 143kV/cm. The error of switched charge density between hysteresis loop and experiment of polarization switching was about $10\%$. Also, polarization in retention was decreased as much as about $8\%$ after $10^5$s.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1511_1512
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• 2009

This paper presents a polarization switching antenna integrated with silicon RF MEMS SPDT switches in the form of a package. A low-loss quartz substrate made of SoQ (silicon-on-quartz) bonding is used as a dielectric material of the patch antenna, as well as a packaging lid substrate of RF MEMS switches. The packaging/antenna substrate is bonded with the bottom substrate including feeding lines and RF MEMS switches by BCB adhesive bonding, and RF energy is transmitted from signal lines to antenna by slot coupling. Through this approach, fabrication complexity and degradation of RF performances of the antenna due to the parasitic effects, which are all caused from the packaging methods, can be reduced. This structure is expected to be used as a platform for reconfigurable antennas with RF MEMS tunable components. A linear polarization switching antenna operating at 19 GHz is manufactured based on the proposed method, and the fabrication process is carefully described. The s-parameters of the fabricated antenna at each state are measured to evaluate the antenna performance.

• Journal of the Optical Society of Korea
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• v.14 no.2
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• pp.137-141
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• 2010

We report, for the first time to our knowledge, observation of polarization bistability from 1.55-${\mu}m$ wavelength single-mode VCSELs of a conventional cylinder-shape under control of their driving current, and demonstration of all-optical flip-flop (AOFF) operations based on the bistability with optical set and reset pulse injection at a 50 MHz switching frequency. The injection pulse energy was less than 14 fJ. The average on-off contrast ratio of the flip-flopped signals was about 7 dB. These properties of the VCSELs will be potentially useful for future high-speed all-optical signal processing applications.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.11
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• pp.1995-1997
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• 2007

In this paper we propose a wavelength-switchable fiber ring laser that employs a polarization-dependent fiber band stop filter. The fiber filter was fabricated by inscribing a long-period fiber grating on a high birefringent fiber. Dual-wavelength switching operation was accomplished by controlling the rotatable linear polarizer which rotated the polarization plane of the light circulating through the fiber laser cavity. The amplitude variation of both laser lines was measured to be less than 0.5 dB and the signal-to-amplified spontaneous emission ratio was more than 55 dB.