• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.771-774
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• 2003

The mechanical properties of barrier ribs in PDP require quantification in order to control the defects and to increase the yield in the process. Several different types of rib materials were tested for hardness (H) and Young's modulus (E) with a microtip indenter (Berkovich type). For the assessment of fracture toughness of the rib, a macro Vikers indenter was used. The materials with 30wt% of filler were fired at between $490^{\circ}C$ and $570^{\circ}C$. As a result, the composite became fully densified at $520^{\circ}C$, which is near the T s (Littleton softening point) of glass frit. As the filler content increased, the fracture toughness also $(K_{IC})$ increased in the range of 0.60 to 2.63 $MPa{\cdot}m^{0.5}$ after sintering at $550^{\circ}C$. The results suggest that the application of a nano-indenter would be useful for testing the mechanical properties of barrier ribs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.239-242
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• 2004

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1416-1418
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• 1998

In this paper, the physical and electrical conduction properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. In FTIR spectrum for physical properties, the strong absorptions by methyl groups in wavenumbers 720[$cm^{-l}$] and 1463[$cm^{-l}$] are observed, and the effect by residual carbonyl groups (C = 0) is hardly appeared. So, as a result of the electrical conduction properties, it is confirmed that the conduction current is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.1
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• pp.50-58
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• 2008

The SM45C metallic coupons have been tested under static tensile loading with acoustic emission (AE) as the load-deflection curve mainly. In this study, we used AE to detect the yielding of material and AE techniques was applied to rapidly estimate the mechanical characteristics of a material. First, coupons without an artificial defect were tested at different cross-head speed. For all cases in this analysis, yielding point of SM45C coupons did not appear definitely compared to mild steel, whereas coupons start to generate AE counts upon yielding. So all cases are normalized to know the possibility of accelerated life test of a material. And next, coupons with different from sizes of circular hole defects were tested at the same cross-head speed of 5 mm/min. Results were classified into 3 classes and analyzed by AE amplitude & signal strength as a function of time. Summarizing the specific conclusions, we need to additional research considering plate with width-ratio in order to estimate the fracture mechanism.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.26 no.3
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• pp.306-312
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• 2017

Press rolls are constantly exposed to physical and heat stresses on their surface and are prone to crack, bruise, and spall if the accumulated stress goes beyond the critical point. Such surface phenomenon can cause them to lose their functionality and eventually lead to a halted production line. Eddy current testing can be considered a useful method to investigate the surface of the roll. The method involves the application of a high intensity magnetic field onto the surface of the roll, and thereby finding any early stage of possible defects. When the method was applied for roll inspection, the cross section of the sensor was regulated as per the overall testing speed. A smaller cross sectional area implied a better resolution but a longer testing time. In this paper, a convenient method to increase both overall system resolution and inspection speed of eddy current roll inspection is suggested by using a devised array sensor structure.

• The Korean Journal of Food And Nutrition
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• v.10 no.3
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• pp.414-421
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• 1997

HACCP procedures are regarded as essential components of modern safety assurance programs for all forms of food processing and preservation, including irradiation. Control of hazards and classification of hazardous microorganisms and indicator organisms (and related tests) are helpful to establish preventive and practice regulations at each facility. A carefully conceived and well implemented system assure the safety of all products. The HACCP is designed to prevent defects, rather than to detect them as in traditional end-point testing and inspection, as controlling requirements into food formulations, processing parameters and operating practices. This article commentes on some equipments and materials for HACCP system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.30-33
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• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• Proceedings of the KSME Conference
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• 2001.06a
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• pp.17-25
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• 2001

This paper briefly describes the new engineering method, called the enhanced reference stress method, to estimate J (or $C^*$) for non-linear fracture mechanics analysis of defective components, recently proposed by authors. The proposed method offers significant advantages over existing methods in terms of its accuracy, simplicity and robustness. Examples of application of the proposed method to typical piping integrity problems such as through-wall cracked pipes under combined loading, and surface cracked pipes under internal pressure and bending are given. Excellent agreements between the FE J and $C^*$ results and those of the proposed method provide sufficient confidence in the use of the proposed method. One notable point is that the proposed method can be used to estimate J (or $C^*$) along the crack front of surface cracks. Moreover simplicity of the proposed method makes it easy to extend to more complex problems. Thus the proposed method is attractive to assess the significance of defects under practical situations.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.11.2-11.2
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• 2010

Photovoltaic devices are promising candidates as affordable and large-area renewable energy sources, which can replace the fossil-fuel-based resources. Especially, thin film solar cells have attracted increasing research attention, since they have a great advantage of low production cost. From the physical point of view, the photovoltaic devices can provide us interesting questions, how to enhance the light absorption and the carrier collection efficiency. A lot of approaches would be possible to address these issues. We have focused on two major topics relevant to photovoltaic device physics; (1) light management using surface plasmons and (2) junction characterizations aiming at proper interface engineering. Regarding the first topic, we have investigated the influences of Ag under-layer morphology on optical properties of ZnO thin films. The experimental results suggested that coupling between the surface plasmon polaritons at the ZnO/Ag interface and excitons in ZnO should play important roles in reflectivity of the ZnO/Ag thin films, which are widely used back reflector structures in thin film solar cells. For the second topic, we have carried out scanning probe microscopy studies of Schottky junctions consisting of photovoltaic materials. Such a research is very helpful to understand the correlation between the defects (e.g., grain boundaries) and local electrical properties. We will introduce some of the recent experimental results and discuss the physical significance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.