• Archives of Reconstructive Microsurgery
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• 제17권2호
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• pp.101-107
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• 2008

Purpose: Free flaps from the great toe are an established method for reconstruction of absent or partially amputated thumbs. However, options differ as to which technique represents the ideal solution for each level of amputation. Various methods of distal thumb reconstruction have been proposed. We prefer to transplant the entire great toe nail complex with the almost all of the pulp rather than a portion of the nail. This paper reflects our experience in using the great toe mini wrap-around flap for distal thumb reconstruction. Materials and Methods: In the period from October of 2005 to July of 2007, 9 patients were treated for traumatic thumb defects localized at the distal phalanx of the thumb. The patients included seven men and two women. The mean age was 44 years (range, 21~60) and the dominant right hand was involved in seven of nine patients. Results: The transferred flaps have survived completely in all cases. The mean range of motion in the interphalangeal joints was 51o, with 73% of the normal uninjured opposite hands. The two-point discrimination was 10.5 mm (range, 5~13 mm). In Semmes-Weinstein monofilament test, the sensibility was 4.31 in 4 cases, 3.61 in 3 cases and 2.83 in 2 cases. The pinch power was 64% (range, 55~95%) of the opposite hand. All patients were satisfied with the appearance of the reconstructed thumb and felt comfortable at final follow-up. Conclusion: We have successfully reconstructed 9 cases of traumatic distal thumb defects using the mini wrap-around free flap. The mini wrap-around free flap in great toe is an excellent alternative method for distal thumb reconstruction in selected patients.

• 한국철도학회논문집
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• 제14권2호
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• pp.109-115
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• 2011

고속철도 KTX 차량의 답면제동은 전기제동이 작용하지 않는 저속에서 열차를 정거장의 정위치에 정차시킬 때 주로 사용되는데 그 동안 균열발생, 제륜자 키 탈락 등 잦은 고장이 발생하였다. 본 연구에서는 이러한 고장의 원인을 규명하고 각 고장에 대해 해결책을 제시하고 시험평가를 통하여 개선효과를 검증하였다. 제륜자 키와 캠의 강도향상과 제륜자 마찰재 지지판의 강도향상은 제륜자 마찰재의 균열발생을 약간 줄이는 효과는 있었다. 지지판의 강도향상, 구조개선과 함께 제륜자의 재질을 변경하였을 때 마찰재에는 균열이 거의 발생되지 않았다.

• 비파괴검사학회지
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• 제21권1호
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• pp.54-61
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• 2001

웨이블릿 변환과 인공신경망을 이용하여 AE 신호를 분류하는 소프트웨어 패키지를 개발하였다. 웨이블릿 변환으로는 연속 웨이블릿 변환과 이산 웨이블릿 변환을 모두 고려하였으며, 인공신경망의 모델로는 오류 역전파 인공신경망을 사용하였다. 분류에 사용된 AE 신호는 용접부에 인공결함을 가진 시편의 3점 굽힘시험에서 발생한 신호이다. 개발된 소프트웨어 패키지를 이용하여 이 신호를 웨이블릿 변환시켜 생성된 시간-주파수 평면상에서 특징값을 추출하고 이를 인공신경망에 학습하여 인공신경망 분류기를 설계하고 검증하였다. 본 연구에서 개발된 소프트웨어 패키지를 이용한 AE 신호 분류법이 유용함을 보이고, 또한 연속 웨이블릿 변환과 이산 웨이블릿 변환에 의한 분류 결과를 비교하였다.

• Tribology and Lubricants
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• 제35권5호
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• pp.274-285
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• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

• Journal of Periodontal and Implant Science
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• 제49권4호
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• pp.258-267
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• 2019

Purpose: Increased bone regeneration has been achieved through the use of stem cells in combination with graft material. However, the survival of transplanted stem cells remains a major concern. The purpose of this study was to evaluate the viability of transplanted mesenchymal stem cells (MSCs) at an early time point (24 hours) based on the type and form of the scaffold used, including type I collagen membrane and synthetic bone. Methods: The stem cells were obtained from the periosteum of the otherwise healthy dental patients. Four symmetrical circular defects measuring 6 mm in diameter were made in New Zealand white rabbits using a trephine drill. The defects were grafted with 1) synthetic bone (${\beta}$-tricalcium phosphate/hydroxyapatite [${\beta}-TCP/HA$]) and $1{\times}10^5MSCs$, 2) collagen membrane and $1{\times}10^5MSCs$, 3) ${\beta}-TCP/HA+collagen$ membrane and $1{\times}10^5MSCs$, or 4) ${\beta}-TCP/HA$, a chipped collagen membrane and $1{\times}10^5MSCs$. Cellular viability and the cell migration rate were analyzed. Results: Cells were easily separated from the collagen membrane, but not from synthetic bone. The number of stem cells attached to synthetic bone in groups 1, 3, and 4 seemed to be similar. Cellular viability in group 2 was significantly higher than in the other groups (P<0.05). The cell migration rate was highest in group 2, but this difference was not statistically significant (P>0.05). Conclusions: This study showed that stem cells can be applied when a membrane is used as a scaffold under no or minimal pressure. When space maintenance is needed, stem cells can be loaded onto synthetic bone with a chipped membrane to enhance the survival rate.

• 대한토목학회논문집
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• 제28권6A호
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• pp.873-880
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• 2008

구조물의 열화 또는 손상상태 점검 시 정기적인 외관조사는 매우 중요한 역할을 담당한다. 이때 실시되는 외관조사는 주로 조사자의 스케치나 일반 카메라를 이용한 사진촬영에 의해 이루어지고 있다. 이럴 경우, 조사에 많은 노력과 시간이 소요된다. 따라서 본 연구에서는 보다 효율적이고 효과적인 조사를 위하여, 터널 외관상의 결함을 자동인식 할 수 있는 시스템을 개발하고자 한다. 이 과정에서 결함 손상인식을 위한 화상처리기술과 데이터 관리 및 분석 시스템이 중점적으로 개발 응용되었다. 이를 통해 콘크리트의 균열, 누수, 백화, 박리, 박락, 손상 등의 결함을 인식하여 데이터를 획득하고, 지속적이고 체계적인 데이터 관리시스템을 구축하여, 터널의 안전성 확보, 기능성 유지, 수명연장 등의 효과를 얻고자 한다.

• 항공우주시스템공학회지
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• 제18권3호
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• pp.17-26
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• 2024

항공기 엔진은 비행 중 고온, 고압과 터빈 축의 회전으로 인한 응력이 발생한다. 이러한 하중으로 인해 구조 내/외부에 미세한 균열이 발생할 수 있다. 이는 구조적 결함으로 이어져 부품의 수명에 악영향을 줄 수 있다. 이러한 현상을 사전에 방지하고자 균열에 대한 유한요소해석이 진행된다. 하지만 이 과정은 반복적인 균열 모델링이 이루어져 많은 시간과 노력을 수반한다. 그러므로 본 논문에서는 유한요소모델 기반의 균열 모델링 기법을 개발하였다. 균열 모델링에는 점 간의 연결에 제한을 가지고 공간을 삼각 분할하는 Constrained Delaunay Triangulation(CDT)을 사용하였다. 반타원 균열을 가지는 평판과 원통형 용기에 대한 응력확대계수 비교를 통해 기법을 검증하였으며, 균열 해석에 유용함을 보였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.179-200
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• 1996

The intrinsic instabilities of fluid flow occurred in the melt of the Czochralski crystal growth system Czochralski method, asymmetric flow patterns and temperature profiles in the melt have been studied by many researchers. The idea that the non-symmetric structure of the growing equipment is responsible for the asymmetric profiles is usually accepted at the first time. However further researches revealed that some intrinsic instabilities not related to the non-symmetric equipment structure in the melt could also appear. Ristorcelli had pointed out that there are many possible causes of instabilities in the melt. The instabilities appears because of the coupling effects of fluid flow and temperature profiles in the melt. Among the instabilities, the B nard type instabilities with no or low crucible rotation rates are analyzed by the visualizing experiments using X-ray radiography and the 3-D numerical simulation in this study. The velocity profiles in the Silicon melt at different crucible rotation rates were measured using X-ray radiography method using tungsten tracers in the melt. The results showed that there exits two types of fluid flow mode. One is axisymmetric flow, the other is asymmetric flow. In the axisymmetric flow, the trajectory of the tracers show torus pattern. However, more exact measurement of the axisymmetrc case shows that this flow field has small non-axisymmetric components of the velocity. When fluid flow is asymmetric, the tracers show random motion from the fixed view point. On the other hand, when the observer rotates to the same velocity of the crucible, the trajectory of the tracer show a rotating motion, the center of the motion is not same the center of the melt. The temperature of a point in the melt were measured using thermocouples with different rotating rates. Measured temperatures oscillated. Such kind of oscillations are also measured by the other researchers. The behavior of temperature oscillations were quite different between at low rotations and at high rotations. Above experimental results means that the fluid flow and temperature profiles in the melt is not symmetric, and then the mode of the asymmetric is changed when rotation rates are changed. To compare with these experimental results, the fluid flow and temperature profiles at no rotation and 8 rpm of crucible rotation rates on the same size of crucible is calculated using a 3-dimensional numerical simulation. A finite different method is adopted for this simulation. 50×30×30 grids are used. The numerical simulation also showed that the velocity and flow profiles are changed when rotation rates change. Futhermore, the flow patterns and temperature profiles of both cases are not axisymmetric even though axisymmetric boundary conditions are used. Several cells appear at no rotation. The cells are formed by the unstable vertical temperature profiles (upper region is colder than lower part) beneath the free surface of the melt. When the temperature profile is combined with density difference (Rayleigh-B nard instability) or surface tension difference (Marangoni-B nard instability) on temperature, cell structures are naturally formed. Both sources of instabilities are coupled to the cell structures in the melt of the Czochralski process. With high rotation rates, the shape of the fluid field is changed to another type of asymmetric profile. Because of the velocity profile, isothermal lines on the plane vertical to the centerline change to elliptic. When the velocity profiles are plotted at the rotating view point, two vortices appear at the both sides of centerline. These vortices seem to be the main reason of the tracer behavior shown in the asymmetric velocity experiment. This profile is quite similar to the profiles created by the baroclinic instability on the rotating annulus. The temperature profiles obtained from the numerical calculations and Fourier transforms of it are quite similar to the results of the experiment. bove esults intend that at least two types of intrinsic instabilities can occur in the melt of Czochralski growing systems. Because the instabilities cause temperature fluctuations in the melt and near the crystal-melt interface, some defects may be generated by them. When the crucible size becomes large, the intensity of the instabilities should increase. Therefore, to produce large single crystals with good quality, the behavior of the intrinsic instabilities in the melt as well as the effects of the instabilities on the defects in the ingot should be studied. As one of the cause of the defects in the large diameter Silicon single crystal grown by the

• 비파괴검사학회지
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• 제36권5호
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• pp.370-376
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• 2016

구조물 표면은 부식으로 인하여, 크랙이나 감육이 발생할 수 있으며, 이로 인하여 구조물의 파단으로 귀결되어 많은 인명 피해와 재산 손실을 초래할 수 있다. 이에 따라, 박판 구조물이나 배관 구조물과 같이 검사 면적에 비해 두께가 얇은 구조물에 대한 레이저 영상화 기법은 최근 10여년간 꾸준히 연구가 진행되었다. 가장 많이 사용되는 방법으로는 펄스 레이저를 이용한 영상화 시스템이다. 이 방법을 이용하여 평판 구조물, 배관 등 다양한 구조물을 스캐닝하여 비교적 짧은 시간에 원하는 영역을 검사하고 영상화하는 기법이 개발되었다. 하지만, 이 기법은 음파가 결함에 의해 반사되는 반사파를 이용하여 영상화하는 기법으로 검사 위치마다 수 ms의 시간지연이 필요하며, 검사 위치마다 레이저 빔을 집속해주는 렌즈가 필요하여 고가의 복잡한 시스템이 필요하다. 본 연구에서는 연속 가진기법을 이용하여 구조물에 정상파(standing wave)를 가진하고, 이 정상파를 위치별로 스캐닝하여 결함을 영상화하는 기술을 제안하였다. 평판 구조물에 두께가 변화하는 결함을 인공적으로 삽입하여, 제안된 기술의 두께 변화 탐지 가능성을 제시하였다.