• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.259-263
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• 2001

The continuum model of transient point defect dynamics to predict the concentrations of interstitial and vacancy is established by estimating expressions for the thermophysical properties of intrinsic point defects. And the point defect distribution in a Czochralski-grown 200 mm silicon crystal and the location of oxidation-induced stacking fault ring(OiSF-ring) created during the cooling of crystals are calculated by using the numerical analysis. The purpose of this paper is to show that his approach lead to predictions that are consistent with experimental results. Predicted point defect distributions by transient point defect dynamic analysis are in good qualitative agreement with experimental data under widely and abruptly varying crystal pull rates when correlated with the position of the OiSF-ring .

• Proceedings of the IEEK Conference
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• 2003.11a
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• pp.351-354
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• 2003

To inspect point-defect in LCD pannel, calculate period and eliminated pattern. And then find point-defect to compare block image with each period. First processing, Founded over point defects. To reduce wrong point defect. Next, label point-defects and eliminated not surpass fixed limit-size.

• Journal of Energy Engineering
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• v.24 no.1
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• pp.1-9
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• 2015

Welding defects affect the performance of welded pipe joints. In this study, a three point bend test of welded steel and medium density polyethylene (MDPE) pipe joints with defects of various defect locations and defect materials was studied using the finite element method. The defect was assumed to be located at 12 o'clock, 3 o'clock or 6 o'clock direction. The results showed that pipes failed more easily on the compression side due to stress or local buckling. The air defect was more dangerous than the steel defect if the defect was located in the compression side; otherwise, the defect material effect on the integrity of pipes was ignorable. It is argued that the integrity of pipes with defects in the compression side is weaker than that in other regions, and the defect should be located in the compression side or the 12 o'clock position in the three point bend test to maximize the effect of defect existence on the pipe structural integrity.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.505-507
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• 2014

본 연구에서는 제일원리 계산을 이용하여 $Si(100)/SiO_2$ 계면 내부에서 발생하는 point defect들의 거동에 대해 살펴보았다. Defect 계산에 앞서 안정한 $Si/SiO_2$ 계면을 찾아보았고 찾은 계면을 바탕으로 계면에서 point defect의 formation energy를 계산해 보았고 이를 통해 Si defect의 경우 Si층 쪽 보다는 $SiO_2$ 층에서, 그리고 계면 내부 보다는 계면 경계 근처에서 발생할 가능성이 높음을 보였다.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.61-67
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• 1998

The significance of point defects as relevant centers concerning electrochemical function is highlighted. Starting from the most simple case of dilute equilibrium bulk defect chemistry, influence of defect interaction and in particular the impact of interfaces on point defect redistribution are considered. Then recent progress in the field of kinetics in bulk and at boundaries is discussed. Finally, selected applications with emphasis on battery and sensor technology are presented.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.5
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• pp.432-437
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• 2008

This paper proposes a defect cell extraction algorithm for TFT-LCD auto-repair system. Auto defect search algorithm and automatic defect cell extraction method are very important for TFT-LCD auto repair system. In the previous literature[1], we proposed an automatic visual inspection algorithm of TFT-LCD. Based on the inspected information(defect size and defect axis, if defect exists) by the automatic search algorithm, defect cells should be extracted from the input image for the auto repair system. For automatic extraction of defect cells, we used a novel block matching algorithm and a simple filtering process in order to find a given reference point in the LCD cell. The proposed defect cell extraction algorithm can be used in all kinds of TFT-LCD devices by changing a stored template which includes a given reference point. Various experimental results show the effectiveness of the proposed method.

• Journal of KIISE:Software and Applications
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• v.37 no.5
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• pp.386-393
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• 2010

A defect in an image is a set of pixels forming an irregular shape. Since a defect, in most cases, is not easy to be modeled mathematically, the defect detection problem still resides in a research area. If a given image, however, composed by certain patterns, a defect can be detected by the fact that a non-defect area should be explained by another patch in terms of a rotation, translation, and noise. In this paper, therefore, the defect detection method for a repeated multi-patterned image is proposed. The proposed defect detection method is composed of three steps. First step is the interest point detection step, second step is the selection step of a appropriate patch size, and the last step is the decision step. The proposed method is illustrated using SEM images of semiconductor wafer samples.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.32-44
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• 1997

A three-dimensional (3D) full-dynamic damage model for ion implantation in crystalline silicon was proposed to calculate more accurately point defect distributions and ion-implanted concentration profiles during ion implantation process. The developed model was based on the physical monte carlo approach. This model was applied to simulate B and BF2 implantation. We compared our results for damage distributions with those of the analytical kinchin-pease approach. In our result, the point defect distributions obtained by our new model are less than those of kinchin-pease approach, and the vacancy distributions differ from the interstitial distributions. The vacancy concentrations are higher than the interstitial ones before 0.8 . Rp to the silicon surface, and after the 0.8 . Rp to the silicon bulk, the interstitial concentrations are revesrsely higher than the vacancy ones.The fully-dynamic damage model for the accumulative damage during ion implantation follows all of the trajectories of both ions and recoiled silicons and, concurrently, the cumulative damage effect on the ions and the recoiled silicons are considered dynamically by introducing the distributon probability of the point defect. In addition, the self-annealing effect of the vacancy-interstitial recombination during ion implantation at room temperature is considered, which resulted in the saturation level for the damage distribution.

• Journal of Mechanical Science and Technology
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• v.18 no.9
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• pp.1493-1499
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• 2004

This paper describes the speckle shearing interferometry, a non-destructive optical method, for quantitative estimation of void defect and monitoring separation defect inside of a pneumatic tire. Previous shearing interferometry has not supplied quantitative result of inside defect, due to effective factors. In the study, factors related to the details of an inside defect are classified and optimized with pipeline simulator. The size and the shape of defect can be estimated accurately to find a critical point and also is closely related with shearing direction. The technique is applied for quantitative estimation of defects inside of a pneumatic tire. The actual traveling tire is monitored to reveal the cause of separation and the starting points. And also unknown void defects on tread are inspected and the size and shape of defects are estimated which has good agreement with the result of visual inspection.

• Nuclear Engineering and Technology
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• v.53 no.11
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• pp.3852-3859
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• 2021

This paper presents experimental and numerical analysis results regarding the effects of an incomplete penetration defect on the fatigue lives of socket welded pipes. For the experiment, four-point bending fatigue tests with various defect geometries (defect depth and circumferential length) were performed, and test results are presented in terms of stress-life data. The results showed that for circumferentially short defects, the fatigue life tends to increase with increasing crack depth, but for longer defects, the trend becomes the opposite. Finite element analysis showed that for short defects, the maximum principal stress decreases with increases in crack depth. For a longer defect, the opposite trend was found. Furthermore, the maximum principal stress tends to increase with an increase in defect length regardless of the defect depth.